Magnon dispersion to four loops in the ABJM and ABJ models

The ABJM model is a superconformal Chern-Simons theory with N=6 supersymmetry which is believed to be integrable in the planar limit. However, there is a coupling dependent function that appears in the magnon dispersion relation and the asymptotic Bethe ansatz that is only known to leading order at strong and weak coupling. We compute this function to four loops in perturbation theory by an explicit Feynman diagram calculation for both the ABJM model and the ABJ extension. We find that all coefficients have maximal transcendentality. We then compute the four-loop wrapping correction for a scalar operator in the 20 of SU(4) and find that it agrees with a recent prediction from the ABJM Y-system of Gromov, Kazakov and Vieira. We also propose a limit of the ABJ model that might be perturbatively integrable at all loop orders but has a short range Hamiltonian.Comment: LaTeX, feynmp, 17 pages; v2: coupling factor in one Feynman diagram corrected: modified result in the ABJ case only, formulations improved, typos fixed, references added; v3: signs of three diagrams corrected, modifying the final resul

Optical dispersion relations for diamondlike carbon films

Ellipsometric measurements on plasma deposited diamondlike amorphous carbon (a-C:H) films were taken in the visible, (E = 1.75 to 3.5 eV). The films were deposited on Si and their properties were varied using high temperature (up to 750 C) anneals. The real (n) and imaginary (k) parts of the complex index of refraction, N, were obtained simultaneously. Following the theory of Forouhi and Bloomer, a least squares fit was used to find the dispersion relations n(E) and k(E). Reasonably good fits were obtained, showing that the theory can be used for a-C:H films. Moreover, the value of the energy gap, Eg, obtained in this way was compared the the Eg value using conventional Tauc plots and reasonably good agreement was obtained

Notes on Certain Elastic Peculiarities of Phosphor Bronze Wires

Some previous work by one of the authors with wires of an alloy of platinum-iridium, portions of which work were published in these Proceedings, indicated that when the wires were used as suspensions for torsion pendulums, the relations between the period of vibration and the amplitude were exceedingly complicated. The effect of drawing these wires was dealt with in another paper. In all these papers referred to, the statement was made that similar tests should be applied to some of the more common wires in the hope of finding similar, even though smaller effects. Through press of work these experiments have been deferred until the present year. This particular paper will deal with but one feature of the work, namely, the effect of drawing on the elastic nature of phosphor bronze wires. The writers are indebted to the American Electrical Works, of Phillipsdale, Rhode Island, for kindly furnishing them with specimens of the wires

A new technique for oil backstreaming contamination measurements

Due to the large size and the number of diffusion pumps, space simulation chambers cannot be easily calibrated by the usual test dome method for measuring backstreaming from oil diffusion pumps. In addition, location dependent contamination may be an important parameter of the test. The backstreaming contamination was measured in the Space Power Facility (SPF) near Sandusky, OH, the largest space simulation vacuum test chamber in the U.S.. Small clean silicon wafers placed at all desired measurement sites were used as contamination sensors. The facility used diffusion pumps with DC 705 oil. The thickness of the contamination oil film was measured using ellipsometry. Since the oil did not wet the silicon substrate uniformly, two analysis models were developed to measure the oil film: (1) continuous, homogeneous film; and (2) islands of oil with the islands varying in coverage fraction and height. In both cases, the contamination film refractive index was assumed to be that of DC 705. The second model improved the ellipsometric analysis quality parameter by up to two orders of magnitude, especially for the low coverage cases. Comparison of the two models shows that the continuous film model overestimates the oil volume by less than 50 percent. Absolute numbers for backstreaming are in good agreement with published results for diffusion pumps. Good agreement was also found between the ellipsometric results and measurements done by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy (SEM) on examples exposed to the same vacuum runs

Superspace calculation of the four-loop spectrum in N=6 supersymmetric Chern-Simons theories

Using N=2 superspace techniques we compute the four-loop spectrum of single trace operators in the SU(2) x SU(2) sector of ABJM and ABJ supersymmetric Chern-Simons theories. Our computation yields a four-loop contribution to the function h^2(\lambda) (and its ABJ generalization) in the magnon dispersion relation which has fixed maximum transcendentality and coincides with the findings in components given in the revised versions of arXiv:0908.2463 and arXiv:0912.3460. We also discuss possible scenarios for an all-loop function h^2(\lambda) that interpolates between weak and strong couplings.Comment: LaTeX, feynmp, 34 pages; v2: typos corrected, formulations improved, references adde

Desorption Dynamics of Heavy Alkali Metal Atoms (Rb, Cs) off the Surface of Helium Nanodroplets

We present a combined ion imaging and density functional theory study of the dynamics of the desorption process of rubidium and cesium atoms off the surface of helium nanodroplets upon excitation of the perturbed $6s$ and $7s$ states, respectively. Both experimental and theoretical results are well represented by the pseudodiatomic model for effective masses of the helium droplet in the desorption reaction of m_eff/m_He~10 (Rb) and 13 (Cs). Deviations from this model are found for Rb excited to the 6p state. Photoelectron spectra indicate that the dopant-droplet interaction induces relaxation into low-lying electronic states of the desorbed atoms in the course of the ejection process.Comment: in press, J. Phys. Chem. A (2014

Signaling through focal adhesion kinase

Integrin receptor binding to extracellular matrix proteins generates intracellular signals via enhanced tyrosine phosphorylation events that are important for cell growth, survival, and migration. This review will focus on the functions of the focal adhesion kinase (FAK) protein-tyrosine kinase (PTK) and its role in linking integrin receptors to intracellular signaling pathways. FAK associates with several di€erent signaling proteins such as Src-family PTKs, p130 Cas, Shc, Grb2, PI 3-kinase, and paxillin. This enables FAK to function within a network of integrin-stimulated signaling pathways leading to the activation of targets such as the ERK and JNK/mitogen-activated protein kinase pathways. Focus will be placed on the structural domains and sites of FAK tyrosine phosphorylation important for FAKmediated signaling events and how these sites are conserved in the FAK-related PTK, Pyk2. We will review what is known about FAK activation by integrin receptor-mediated events and also non-integrin stimuli. In addition, we discuss the emergence of a consensus FAK substrate phosphorylation sequence. Emphasis will also be placed on the role of FAK in generating cell survival signals and the cleavage of FAK during caspase-mediated apoptosis. An in-depth discussion will be presented of integrin-stimulated signaling events occurring in the FAK knockout ®broblasts (FAK � ) and how these cells exhibit de®cit

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements