Grupo criminoso e método de grupo de cometer um crime no direito penal Russo

In this work the current state of institute of partnership in crime based on the analysis of statistical data which demonstrates to existence of problematic issues in definition of the concepts "criminal group", "group way of commission of crime", "partnership" that affects law-enforcement practice is considered.It is necessary to recognize the increased public danger of the crimes committed by several persons as in such cases the criminal result is a consequence of the combined efforts of two and more persons. At the same time, at qualification of the crimes committed with use of a group way there are problems of their legal treatment at their commission, both within partnership, and beyond its limits.Carrying out short historical digression in development of institute of partnership in the existing criminal legislation, analyzing opinions of scientists concerning differentiation of the concepts "criminal group", "group way of commission of crime", "partnership", the author of article proves need of development of the concept "group way of commission of crime" - by legislative fixing of this concept of the criminal legislation of the Russian Federation. For the purpose of improvement of institute of partnership, entering of corresponding changes into the Russian criminal legislation is offered.En este trabajo, el estado actual del instituto de asociación en delitos se basa en el análisis de datos estadísticos que demuestran la existencia de cuestiones problemáticas en la definición de los conceptos "grupo criminal", "forma grupal de comisión de delitos", "asociación" que afecta Se considera la práctica policial.Es necesario reconocer el aumento del peligro público de los delitos cometidos por varias personas, ya que, en tales casos, el resultado penal es una consecuencia de los esfuerzos combinados de dos o más personas. Al mismo tiempo, en la calificación de los delitos cometidos con el uso de forma grupal, existen problemas de su tratamiento legal en su comisión, tanto dentro de la asociación como más allá de sus límites.Realizando una breve digresión histórica en el desarrollo del instituto de asociación en la legislación penal existente, analizando las opiniones de los científicos sobre la diferenciación de los conceptos "grupo criminal", "forma grupal de comisión de delitos", "sociedad", el autor del artículo demuestra su necesidad del desarrollo del concepto "forma grupal de comisión de delitos" - mediante la fijación legislativa de este concepto de la legislación penal de la Federación de Rusia. Con el fin de mejorar el instituto de asociación, se ofrece la introducción de los cambios correspondientes en la legislación penal rusa.En este trabajo, o estado atual do instituto de associação em delitos se basea na análise de dados estaduais que demoliu a existência de questões problemáticas na definição dos conceitos "grupo criminal", "forma grupal de comisión de delitos", "asociación "que afeta Se considera a prática policial.O primeiro e último incidente sobre o aumento do público dos delitos cometidos pelas pessoas, é que, em alguns casos, o resultado penal é uma conseqüência dos esforços combinados de todos os personagens. Al mismo tempo, na calificación dos delitos cometidos com o uso de forma grupal, existido problemas de tratamento legal em sua comutação, dentro da associação como mais todos os seus direitos.Realizando uma breve digestão sobre o desenvolvimento do instituto de associação na legislação penal, analisando as opiniões dos cientistas sobre a diferenciação dos conceitos "grupo criminal", "forma grupal de comunicação de delitos", "sociedade", o autor Del nuestra des demolière des necesidad del desarrollo del concepto "forma grupal de comisión de delitos" - mediante a legislação fijación del concepto de la legislación penal de la Federación de Rusia. Con el fin de mejorar el instituto de associación, se de re ce la introducción de los cambios correspondents en la legislación penal rusa

Quantum phases of SrCu2(BO3)2 from high-pressure thermodynamics

We report heat capacity measurements of SrCu$_2$(BO$_3$)$_2$ under high pressure along with simulations of relevant quantum spin models and map out the $(P,T)$ phase diagram of the material. We find a first-order quantum phase transition between the low-pressure quantum dimer paramagnet and a phase with signatures of a plaquette-singlet state below T = $2$ K. At higher pressures, we observe a transition into a previously unknown antiferromagnetic state below $4$ K. Our findings can be explained within the two-dimensional Shastry-Sutherland quantum spin model supplemented by weak inter-layer couplings. The possibility to tune SrCu$_2$(BO$_3$)$_2$ between the plaquette-singlet and antiferromagnetic states opens opportunities for experimental tests of quantum field theories and lattice models involving fractionalized excitations, emergent symmetries, and gauge fluctuations.Comment: 6 pages + 8 pages supplemental informatio

Substantiation of Parameters and Operating Modes for the Bunch Planting Device of the Pneumatic Seeder

Abstract The purpose of this work is to develop a dosing system that provides high-quality bunch planting of watermelon seeds with a given seeding rate and their uniform distribution over the plant nutrition area. It is important to know how many seeds it is needed in the bunch in order to provide the required number of plants in a certain plant nutrition area. The method to achieve this goal is to determine the optimal operating modes for the seeding device, in which the dosing system would supply the seed to the bunch without gaps, searching for dependencies that can determine the required number of the sown seeds in the bunch, taking into account their germination and the number of plants specified by agrotechnical conditions in every bunch. Based on the obtained dependencies, determining the probability of bunches with various numbers of plants, while sowing four seeds in the seedbed with maximum field germination, the design of experimental seed discs is proposed, allowing bunch planting and germination due to easy destruction of the soil crust. At the same time, optimal use of the nutritional area for plants, and, consequently, an increase in the yield of the sown crops is ensured. Experimental seed discs with a group arrangement of suction holes (four cells each) will provide bunch planting of watermelon seeds in accordance with agrotechnical requirements

Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3

Here we report the observation of pressure-induced melting of antiferromagnetic (AFM) order and emergence of a new quantum state in the honeycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity of quantum spin liquid state. Our high-pressure heat capacity measurements demonstrate that the AFM order smoothly melts away at a critical pressure (Pc) of 0.7 GPa. Intriguingly, the AFM transition temperature displays an increase upon applying pressure below the Pc, in stark contrast to usual phase diagrams, for example in pressurized parent compounds of unconventional superconductors. Furthermore, in the high-pressure phase an unusual steady of magnetoresistance is observed. These observations suggest that the high-pressure phase is in an exotic gapped quantum state which is robust against pressure up to ~140 GPa.Comment: 20 pages, 4 figure

Unipolar barrier structures based on HgCdTe for infrared detection

One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been achieved in the development of barrier detectors based on semiconductors of the AIIIBV group, which is associated with the possibility of realizing systems with a zero barrier in the valence band. Unipolar barrier detectors based on mercury cadmium telluride (HgCdTe) grown by molecular beam epitaxy (MBE) are of interest due to significant technological advantages, since the creation of such devices can abandon the defect forming procedure of ion implantation. Despite a significant number of theoretical works, only a few attempts are known to practically implement nBn detectors based on MBE HgCdTe

Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator

The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency range 10 kHz-1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al2O3 have a large enough insulator capacitance (compared to SiO2/Si3N4), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat-band voltage. The effective charge density found from the value of the flat-band voltage and slow interface trap density for structures with Al2O3 comparable with the corresponding densities for structures with SiO2/Si3N4

Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator

The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance–voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis