636 research outputs found

    Plasmonic shock waves and solitons in a nanoring

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    We apply the hydrodynamic theory of electron liquid to demonstrate that a circularly polarized radiation induces the diamagnetic, helicity-sensitive dc current in a ballistic nanoring. This current is dramatically enhanced in the vicinity of plasmonic resonances. The resulting magnetic moment of the nanoring represents a giant increase of the inverse Faraday effect. With increasing radiation intensity, linear plasmonic excitations evolve into the strongly non-linear plasma shock waves. These excitations produce a series of the well resolved peaks at the THz frequencies. We demonstrate that the plasmonic wave dispersion transforms the shock waves into solitons. The predicted effects should enable multiple applications in a wide frequency range (from the microwave to terahertz band) using optically controlled ultra low loss electric, photonic and magnetic devices.Comment: 13 pages, 12 figure

    Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors

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    We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing.Comment: 3 pages; 4 figure

    On the inverse problem of magnetostatics

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    This work is devoted to solving the inverse problem of the magnetic method for nonde- structive testing (MMNDT). The purpose of the work, frankly speaking and avoiding complicated concepts and formulas, is to identify research directions in MMNDT that would approach solution of the inverse problem in the field of magnetic defectoscopy to the highest extent. © 2013 Pleiades Publishing, Ltd

    Nanodomain structures formation during polarization reversal in uniform electric field in strontium barium niobate single crystals

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    We have studied the ferroelectric nanodomain formation in single crystals of strontium barium niobate Sr 0.61Ba 0.39Nb 2O 6 using piezoelectric force microscopy and Raman confocal microscopy. The nanodomain structures have been created by application of the uniform electric field at room temperature. Four variants of nanodomain structure formation have been revealed: (1) discrete switching, (2) incomplete domain merging, (3) spontaneous backswitching, and (4) enlarging of nanodomain ensembles. Kinetics of the observed micro- and nanodomain structures has been explained on the basis of approach developed for lithium niobate and lithium tantalate crystals. © 2012 American Institute of Physics

    Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures

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    We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with "thick" channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 thin-film transistors.Comment: 12 pages, 3 figure

    Investigation of Phase-Lagged Boundary Conditions for Turbulence Resolving Turbomachinery Simulations

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    The present work explores whether phase-lagged boundary conditions can be used to perform scale resolving simulations of turbomachines. The phase-lagged approach considered is based on storing the flow signal, both at the pitch-wise boundaries and the rotor-stator interface, as its temporal Fourier coefficients for a finite number of harmonics. The method is implemented in an in-house CFD solver, G3D::Flow, which can perform both URANS and hybrid RANS/LES simulations. In order to evaluate the performance of the phase-lagged boundary condition, a comparison is made with a sliding mesh simulation on a compressor cascade. Furthermore, the possibility of breaking an error feedback loop generated in the sampling process by including multiple blade passages is also investigated. It is found that this approach greatly improves convergence and accuracy of the sampling
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