Dynamic Control of Metamaterials at Terahertz Frequencies

Thesis advisor: Willie J. PadillaProgress in the field of metamaterials has started coming to a point where the field may finally begin to emerge as a viable solution to many electromagnetic challenges facing the community. No where is that more true then at terahertz frequencies where there lies an immense opportunity for growth. The development of mature technologies within this region of the electromagnetic spectrum would provide a valuable resource to become available for a multitude of applications. In order to achieve this, the necessary first steps of identifying viable materials and paths to integrate these with metamaterials will need to be completed. In this dissertation, we examine several different paths to achieve dynamic metamaterial electromagnetic response at terahertz frequencies, and demonstrate several paths to package these devices into imaging systems. In Chapter 1, we introduce the basic theory and design principles of metamaterials. We also describe the experimental techniques involved in the study of terahertz metamaterials. Chapter 2 presents a computational and experimental study investigating the integration of high electron mobility transistors with metamaterials allowing for high speed modulation of incident terahertz radiation. In Chapters 3 and 4, we investigate several different paths to create tunable terahertz metamaterial absorbers. Chapter 3 presents an investigation where we encapsulate a metametarial absorber unit cell with liquid crystals. We study both computationally and experimentally the tuning mechanism of the absorber as the liquid crystal refractive index is controlled as a function of the applied electric field strength and modulation frequency. In Chapter 4, we form a doped semiconducting metamaterial spatial light modulator with multi-color super-pixels composed of arrays of electronically controlled terahertz metamaterial absorbers. We computationally and experimentally study the independent tunability of each pixel in the spatial array and demonstrate high speed modulation. Chapter 5 introduces a multiplex imaging approach by using a terahertz spatial light modulator to enable terahertz imaging with a single pixel detector. We demonstrate the capability for high speed image acquisition, currently only limited by the commerical software used to reconfigure the spatial masks. We also configure the system to capture high fidelity images of varying complexity. In Chapter 6, we show how a metamaterial absorber can be implemented into a detector focal plane array for high sensitivity, low mutual coupling, and broad angle performance. Finally, we summarize in Chapter 7 the achievments of the research presented and highlight the direction of future work.Thesis (PhD) — Boston College, 2013.Submitted to: Boston College. Graduate School of Arts and Sciences.Discipline: Physics

Loss compensation in Metamaterials through embedding of active transistor based negative differential resistance circuits

This paper presents an all-electronic approach for loss compensation in metamaterials. This is achieved by embedding active-transistors based negative differential resistance (NDR) circuits in each unit cell of the metamaterial lattice. NDR circuits provide tunable loss compensation over a broad frequency range limited only by the maximum operating frequency of transistors that is reaching terahertz values in newer semiconductor processes. Design, simulation and experimental results of metamaterials composed of split ring resonators (SRR) with and without loss compensation circuits are presented

Control of the Scattering Properties of Complex Systems By Means of Tunable Metasurfaces

We demonstrate the ability to control the scattering properties of a two-dimensional wave-chaotic microwave billiard through the use of tunable metasurfaces located on the interior walls of the billiard. The complex reflection coefficient of the metasurfaces can be varied by applying a DC voltage bias to varactor diodes on mushroom-shaped resonant patches, and this proves to be very effective at perturbing the eigenmodes of the cavity. Placing multiple metasurfaces inside the cavity allows us to engineer desired scattering conditions, such as coherent perfect absorption (CPA), by actively manipulating the poles and zeros of the scattering matrix through the application of multiple voltage biases. We demonstrate the ability to create on-demand CPA conditions at a specific frequency, and document the near-null of output power as a function of four independent parameters tuned through the CPA point. A remarkably low output-to-input power ratio of $\frac{P_{out}}{P_{in}} = 3.71 \times 10^{-8}$ is achieved near the CPA point at 8.54 GHz

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($\sigma_{1}(\omega,T)$). From our analysis of $\sigma_{1}(\omega,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.Comment: 4 pages, 4 figure

Correlated metallic state of vanadium dioxide

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic correlations, not electron-phonon interactions, govern charge dynamics in the metallic state of VO$_2$. This study focuses on the frequency and temperature dependence of the conductivity in the regime of extremely short mean free path violating the Ioffe-Regel-Mott limit of metallic transport. The standard quasiparticle picture of charge conduction is found to be untenable in metallic VO$_2$.Comment: 5 pages, 3 figure

A monolithic resonant terahertz sensor element comprising a metamaterial absorber and micro-bolometer

In this article a monolithic resonant terahertz sensor element with a noise equivalent power superior to that of typical commercial room temperature single pixel terahertz detectors and capable of close to real time read-out rates is presented. The detector is constructed via the integration of a metamaterial absorber and a micro-bolometer sensor. An absorption magnitude of 57% at 2.5 THz, a minimum NEP of inline image and a thermal time constant of 68 ms for the sensor are measured. As a demonstration of detector capability, it is employed in a practical Nipkow terahertz imaging system. The monolithic resonant terahertz detector is readily scaled to focal plane array formats by adding standard read-out and addressing circuitry enabling compact, low-cost terahertz imaging

Graphene terahertz modulators by ionic liquid gating

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature

Fermi-surface topologies and low-temperature phases of the filled skutterudite compounds CeOs4Sb12 and NdOs4Sb12

MHz conductivity, torque magnetometer and magnetization measurements are reported on single crystals of CeOs4Sb12 and NdOs4Sb12 using temperatures down to 0.5 K and magnetic fields of up to 60 tesla. The field-orientation dependence of the de Haas-van Alphen and Shubnikov-de Haas oscillations is deduced by rotating the samples about the [010] and [0¯11] directions. The results indicate that NdOs4Sb12 has a similar Fermi surface topology to that of the unusual superconductor PrOs4Sb12, but with significantly smaller effective masses, supporting the importance of local phonon modes in contributing to the low-temperature heat capacity of NdOs4Sb12. By contrast, CeOs4Sb12 undergoes a field-induced transition from an unusual semimetal into a high-field, hightemperature state characterized by a single, almost spherical Fermi-surface section. The behavior of the phase boundary and comparisons with models of the bandstructure lead us to propose that the field-induced phase transition in CeOs4Sb12 is similar in origin to the well-known α − γ transition in Ce and its alloys