1,431 research outputs found

    Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations

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    We present a comprehensive theory of spin transport in a non-degenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the semiconductor is studied during a perturbation of a general, non-collinear magnetization configuration and a method is shown to identify the various configurations from current signals. The conventional Landauer-B\"{u}ttiker description for spin transport across Schottky contacts is generalized by the use of a non-linearized I-V relation, and it is extended by taking into account non-coherent transport mechanisms. The theory is used to analyze a three terminal lateral structure where a significant difference in the spin accumulation profile is found when comparing the results of this model with the conventional model.Comment: 17 pages, 10 figure

    Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

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    We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.Comment: Minor revision to appear in Phys. Rev. B. Color figures available in the online PRB version or upon request to: [email protected]

    Thermodynamic basis of the concept of "recombination resistances"

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    The concept of "recombination resistance" introduced by Shockley and Read (Phys. Rev. 87, 835 (1952)) is discussed within the framework of the thermodynamics of irreversible processes ruled by the principle of the minimum rate of entropy production. It is shown that the affinities of recombination processes represent "voltages" in a thermodynamic Ohm-like law where the net rates of recombinations represent the "currents". The quantities thus found allow for the definition of the "dissipated power" which is to be related to the rate of entropy production of the recombination processes dealt with.Comment: Submitted to Phys. Rev.

    Connectivity of Growing Random Networks

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    A solution for the time- and age-dependent connectivity distribution of a growing random network is presented. The network is built by adding sites which link to earlier sites with a probability A_k which depends on the number of pre-existing links k to that site. For homogeneous connection kernels, A_k ~ k^gamma, different behaviors arise for gamma1, and gamma=1. For gamma<1, the number of sites with k links, N_k, varies as stretched exponential. For gamma>1, a single site connects to nearly all other sites. In the borderline case A_k ~ k, the power law N_k ~k^{-nu} is found, where the exponent nu can be tuned to any value in the range 2<nu<infinity.Comment: 4 pages, 2 figures, 2 column revtex format final version to appear in PRL; contains additional result

    A 14-Year Empirical Analysis of Undergraduates’ Pre- and Post-Test Scores in Three Introductory Communication Courses: Lessons Learned for Pedagogy and Assessment

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    Conducting long-term assessment of the impact of students’ participation in introductory communication courses is an important endeavor for enhancing pedagogy and understanding the contribution of communication instruction to the student experience. This 14-year study reports data from a campus-wide assessment program extending from 2004 to 2018. The study analyzed a large sample of undergraduate students’ self-reported pre- and post-test scores on critical variables related to student outcomes in three introductory communication courses. The variables examined were demographic characteristics, self-esteem and communication apprehension in both the public speaking course and the business communication course, and self-esteem and willingness to communicate in the interpersonal communication course. Across the 14-year period, 93% of the results of pre/post comparison scores showed a significant increase in students’ self-perceived levels of self-esteem and willingness to communicate and a significant decrease in communication apprehension (p \u3c .001). The usefulness of the results are discussed. Four general conclusions for engaging in introductory course assessment are outlined, along with specific lessons learned and best practices for consideration by basic course directors and faculty

    Time-Dependent Current Partition in Mesoscopic Conductors

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    The currents at the terminals of a mesoscopic conductor are evaluated in the presence of slowly oscillating potentials applied to the contacts of the sample. The need to find a charge and current conserving solution to this dynamic current partition problem is emphasized. We present results for the electro-chemical admittance describing the long range Coulomb interaction in a Hartree approach. For multiply connected samples we discuss the symmetry of the admittance under reversal of an Aharonov-Bohm flux.Comment: 22 pages, 3 figures upon request, IBM RC 1971

    A longitudinal and experimental study of the impact of knowledge on the bases of institutional trust

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    This study examined a knowledge-centered theory of institutional trust development. In the context of trust in water regulatory institutions, the moderating impact of knowledge was tested to determine if there were longitudinal changes in the bases of institutional trust as a function of increases in knowledge about a target institution. We hypothesized that as people learn about an institution with which they were previously unfamiliar, they begin to form more nuanced perceptions, distinguishing the new institution from other institutions and relying less upon their generalized trust to estimate their trust in that institution. Prior to having specific, differential information about a new institution, we expected institutional trust to be a function of generalized trust variables such as dispositional trust and trust in government. The longitudinal experiment involved 185 college students randomly assigned to one of three information conditions. Every 3 months for 15 months, participants read information about water regulatory institutions or a control institution. At each time point, participants reported their trust in and perceptions of the trust- and distrust-worthiness of the water regulatory institutions. Participants also completed measures of knowledge of water regulatory institutions, dispositional trust, and governmental trust. Our manipulation check indicated that, as expected, those in the experimental group increased in subjective knowledge of water regulatory institutions to a greater extent than those in the control condition. Consistent with our hypotheses, there was some evidence that, compared to the control group, the experimental group relied less on their general trust in government as a basis for their trust in water regulatory institutions. However, contrary to our hypotheses, there was no evidence the experimental group relied less on dispositional trust as a basis for institutional trust. There also was some evidence the experimental group\u27s trust in water regulatory institutions was less affected by fluctuations of trustworthiness (but not distrustworthiness) perceptions over time. This suggests that knowledge results in the development of more stable institutional trust attitudes, but that trustworthiness and distrustworthiness perceptions may operate somewhat differently when impacting trust in specific institutions

    Surface metal-insulator transition in the Hubbard model

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    The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical strength of the interaction. Depending on the surface geometry, the interaction strength and the wave vector, we find one-electron excitations in the coherent part of the surface-projected metallic spectrum which are confined to two dimensions.Comment: LaTeX, 9 pages, 5 eps figures included, Phys. Rev. B (in press

    Effect of the Coulomb repulsion on the {\it ac} transport through a quantum dot

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    We calculate in a linear response the admittance of a quantum dot out of equilibrium. The interaction between two electrons with opposite spins simultaneously residing on the resonant level is modeled by an Anderson Hamiltonian. The electron correlations lead to the appearence of a new feature in the frequency dependence of the conductance. For certain parameter values there are two crossover frequencies between a capacitive and an inductive behavior of the imaginary part of the admittance. The experimental implications of the obtained results are briefly discussed.Comment: 13 pages, REVTEX 3.0, 2 .ps figures from [email protected], NUB-308
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