485 research outputs found
An Analysis of Traveling-wave Amplification of Surface Magnetostatic Wave
The amplification of a surface magnetostatic wave is analyzed which propagates on the contacting surface of ferrite and semiconductor layers magnetized transversely. A hydrodynamical and collision dominant model is adopted for carriers in the semiconductor. It is explained that neither diffusion effect nor surface charges induced by the Hall effect have to be considered in this case. Maxwell's equation under adequate boundary conditions is solved to give a complex characteristic equation of real ω and complex k. The following results have been obtained from the equation. 1) When the carrier density or the thickness of the semiconductor is small, the amplification factor is proportional to both of them. 2) There is an optimum value of the carrier density or the thickness to obtain the maximum amplification factor. 3) The amplification factor depends on the direction of static magnetic field
Comparison of Matlantis and VASP bulk formation and surface energies in metal hydrides, carbides, nitrides, oxides, and sulfides
Generic neural network potentials without forcing users to train potentials
could result in significantly acceleration of total energy calculations.
Takamoto et al. [Nat. Commun. (2022), 13, 2991] developed such a deep neural
network potential (NNP) and made it available in their Matlantis package. We
compared the Matlantis bulk formation, surface, and surface O vacancy formation
energies of metal hydrides, carbides, nitrides, oxides, and sulfides with our
previously calculated VASP values obtained from first-principles with the
PBEsol(+U) functional. Matlantis bulk formation energies were consistently ~0.1
eV/atom larger and the surface energies were typically ~10 meV/{\AA}^2 smaller
than the VASP counterpart. Surface O vacancy formation energies were generally
underestimated within ~0.8 eV. These results suggest that Matlantis energies
could serve as a relatively good descriptor of the VASP bulk formation and
surface energies
Numerical simulation of hydrogen entering a second phase particle in aluminum
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Dispositional Determinant of Anger at Norm Violations : Does lt Renflect an lndividual\u27s Selective Responsibility for Needs?
Side-scattered finger-photoplethysmography: experimental investigations toward practical noninvasive measurement of blood glucose
The aim of this study was to discover a simple/convenient geometrical arrangement of radiation sources and detector to acquire finger-photoplethysmograms (PPGs) with wavelength regions of blood glucose (BGL) absorption, toward practical noninvasive BGL measurement. First, we compared PPGs with three wavelengths: 808 nm (without water absorption), 1160 nm (with weak water absorption), and 1600 nm (with nearly peak BGL absorption and strong water absorption), while the source-detector spacing was successively increased circumferentially around a fingertip. In 10 healthy subjects, we observed clear cardiac-related pulsatile components of PPG signals at 808 and 1160 nm in any incident positions with more than 15 dB of signal-to-noise ratio (S/N), but reliable PPG detections at 1600 nm with more than 10 dB of S/N was only possible when the source-detector distance was less than 3mm around the fingertip circumference. Second, with this arrangement, an experiment was performed using six wavelengths to cover glucose absorption bands (from 1550 to 1749 nm), obtaining pulsatile PPG signals with more or less 15 dB of S/N. Through the present experiments, this orthogonal arrangement of the source and detector to detect forward-and side-scattered radiation through the tissue is appropriate for PPG measurements with wavelength regions where there is potential for BGL measurement
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