Ferroelectric Polymer Thin Films for Organic Electronics

The considerable investigations of ferroelectric polymer thin films have explored new functional devices for flexible electronics industry. Polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene (TrFE) are the most commonly used polymer ferroelectric due to their well-defined ferroelectric properties and ease of fabrication into thin films. In this study, we review the recent advances of thin ferroelectric polymer films for organic electronic applications. Initially the properties of ferroelectric polymer and fabrication methods of thin films are briefly described. Then the theoretical polarization switching models for ferroelectric polymer films are summarized and the switching mechanisms are discussed. Lastly the emerging ferroelectric devices based on P(VDF-TrFE) films are addressed. Conclusions are drawn regarding future work on materials and devices

Giant electric energy density in epitaxial lead-free thin films with coexistence of ferroelectrics and antiferroelectrics

Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here we demonstrate that a giant electric energy density (154 J×cm-3, 3 times the highest value of lead-based systems and 5 times the value of the best dielectric/ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability and high efficiency, is realized in pulsed laser deposited (Bi1/2Na1/2)0.9118La0.02Ba0.0582(Ti0.97Zr0.03)O3 (BNLBTZ) epitaxial lead-free relaxor thin films with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion and the coexistence of the FE/AFE phases near the morphotropic phase boundary (MPB). The giant energy storage effect of the BNLBTZ lead-free relaxor thin films may make a great impact on the modern energy storage technology

PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density

A series of 400-nm-thick sandwich structured Pb(1+x)ZrO3/(Pb,Eu)ZrO3/Pb(1+x)ZrO3(PZO/PEZO/PZO) antiferro-electric thin films with different Pb excess content (x) (x=0%, 10%, 20%, and 30%) in the PZO precursors have been successfully deposited on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The effects of Pb excess content on the dielectric properties, and energy storage performance of the PZO/PEZO/PZO thin films have been investigated in detail. It is found that all the films show a unique perovskite phase structure. With increasing Pb excess content in the PZO precursors, P-E hysteresis loop changes from slanted to square shape. Meanwhile, a larger antiferroelectric to ferroelectric switching field (EAF) and ferroelectric to antiferroelectric switching field (EFA) are observed in the films with higher Pb excess content. When increasing Pb excess content from 0% to 30%, the energy storage density of the sandwich structured films is remarkably improved from 11.4 to 14.8 J/cm3 at 1000 kV/cm

Defect-Structure-Related Ferroelectric Properties of K0.5Na0.5NbO3 Lead-Free Piezoelectric Ceramics

Lead-free piezoelectric ceramics K0.5Na0.5NbO3 (KNN) doped with Cu, Fe, and Ni have been prepared by a conventional ceramic process. The results reveal that Cu-doped KNN ceramic exhibits double-loop-like characteristics, while Fe & Ni-doped KNN ceramics show normal single loops. EPR spectra verified the formation of irreversible defect complex (DC1) and (DC2) in Cu-doped ceramics, while defect complexes were observed in Fe-doped ceramics and very small defect complex signal in Ni-doped ceramics. The experimental results show that the ferroelectric properties of KNN ceramics are strongly related to these defect structures

Photoflexoelectric effect in halide perovskites

Harvesting environmental energy to generate electricity is a key scientific and technological endeavour of our time. Photovoltaic conversion and electromechanical transduction are two common energy-harvesting mechanisms based on, respectively, semiconducting junctions and piezoelectric insulators. However, the different material families on which these transduction phenomena are based complicate their integration into single devices. Here we demonstrate that halide perovskites, a family of highly efficient photovoltaic materials, display a photoflexoelectric effect whereby, under a combination of illumination and oscillation driven by a piezoelectric actuator, they generate orders of magnitude higher flexoelectricity than in the dark. We also show that photoflexoelectricity is not exclusive to halides but a general property of semiconductors that potentially enables simultaneous electromechanical and photovoltaic transduction and harvesting in unison from multiple energy inputs

Integration of a Miniature Quartz Crystal Microbalance with a Microfluidic Chip for Amyloid Beta-Aβ42 Quantitation

A miniature quartz crystal microbalance (mQCM) was integrated with a polydimethylsiloxane (PDMS) microfluidic device for on-chip determination of amyloid polypeptide–Aβ42. The integration techniques included photolithography and plasma coupling. Aβ42 antibody was immobilized on the mQCM surface using a cross-linker method, and the resonance frequency of mQCM shifted negatively due to antibody-antigen binding. A linear range from 0.1 µM to 3.2 µM was achieved. By using matrix elimination buffer, i.e., matrix phosphate buffer containing 500 µg/mL dextran and 0.5% Tween 20, Aβ42 could be successfully detected in the presence of 75% human serum. Additionally, high temperature treatments at 150 °C provided a valid method to recover mQCM, and PDMS-mQCM microfluidic device could be reused to some extent. Since the detectable Aβ42 concentration could be as low as 0.1 µM, which is close to cut-off value for Alzheimer patients, the PDMS-mQCM device could be applied in early Alzheimer’s disease diagnosis