Photoelectrochemistry of core–shell tandem junction n–p^+-Si/n-WO_3 microwire array photoelectrodes

Tandem junction (n–p^+-Si/ITO/WO_3/liquid) core–shell microwire devices for solar-driven water splitting have been designed, fabricated and investigated photoelectrochemically. The tandem devices exhibited open-circuit potentials of E_(∝) = −1.21 V versus E^0′(O_2/H_2O), demonstrating additive voltages across the individual junctions (n–p^+-Si E_(∝) = −0.5 V versus solution; WO_3/liquid E_(∝) = −0.73 V versus E^0′(O_2/H_2O)). Optical concentration (12×, AM1.5D) shifted the open-circuit potential to E_(∝) = −1.27 V versus E^0′(O_2/H_2O) and resulted in unassisted H_2 production during two-electrode measurements (anode: tandem device, cathode: Pt disc). The solar energy-conversion efficiencies were very low, 0.0068% and 0.0019% when the cathode compartment was saturated with Ar or H_2, respectively, due to the non-optimal photovoltage and band-gap of the WO_3 that was used in the demonstration system to obtain stability of all of the system components under common operating conditions while also insuring product separation for safety purposes

Modeling, Simulation, and Implementation of Solar-Driven Water-Splitting Devices

An integrated cell for the solar-driven splitting of water consists of multiple functional components and couples various photoelectrochemical (PEC) processes at different length and time scales. The overall solar-to-hydrogen (STH) conversion efficiency of such a system depends on the performance and materials properties of the individual components as well as on the component integration, overall device architecture, and system operating conditions. This Review focuses on the modeling- and simulation-guided development and implementation of solar-driven water-splitting prototypes from a holistic viewpoint that explores the various interplays between the components. The underlying physics and interactions at the cell level is are reviewed and discussed, followed by an overview of the use of the cell model to provide target properties of materials and guide the design of a range of traditional and unique device architectures

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices