Ultra-stable oscillator with complementary transistors

A high frequency oscillator, having both good short and long term stability, is formed by including a piezoelectric crystal in the base circuit of a first bi-polar transistor circuit, the bi-polar transistor itself operated below its transitional frequency and having its emitter load chosen so that the input impedance, looking into the base thereof, exhibits a negative resistance in parallel with a capacitive reactance. Combined with this basic circuit is an auxiliary, complementary, second bi-polar transistor circuit of the same form with the piezoelectric crystal being common to both circuits. By this configuration small changes in quiescent current are substantially cancelled by opposite variations in the second bi-polar transistor circuit, thereby achieving from the oscillator a signal having its frequency of oscillation stable over long time periods as well as short time periods

Temperature sensitive oscillator

An oscillator circuit for sensing and indicating temperature by changing oscillator frequency with temperature comprises a programmable operational amplifier which is operated on the roll-off portion of its gain versus frequency curve and has its output directly connected to the inverting input to place the amplifier in a follower configuration. Its output is also connected to the non-inverting input by a capacitor with a crystal or other tuned circuit also being connected to the non-inverting input. A resistor is connected to the program input of the amplifier to produce a given set current at a given temperature, the set current varying with temperature. As the set current changes, the gain-bandwidth of the amplifier changes and, in turn, the reflected capacitance across the crystal changes, thereby providing the desired change in oscillator frequency by pulling the crystal. There is no requirement that a crystal employed with this circuit display either a linear frequency change with temperature or a substantial frequency change with temperature

Stable amplifier having a stable quiescent point Patent

Development of stable electronic amplifier adaptable for monolithic and thin film constructio

Active tuning circuit

Low-cost, inductorless, high Q active-tuning circuit can be made by coupling pair of transistors and their supporting circuitry to take advantage of frequency dependent energy storage effects. Circuit may be manufactured by standard micro-electronic techniques; has very low noise factor; and input-output matching networks are not necessary

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor

Reflection oscillators employing series resonant crystals'

A reflection oscillator is provided which employs an active device operated in its roll-off region and two resonant circuits. For an oscillator employing a bipolar transistor, the emitter is connected to a series resonant capacitor-crystal network and the base is connected to an L-C tank circuit with the transistor being operated in the roll-off region of its gain versus frequency curve. This will provide a very high frequency of operation with a relatively inexpensive, low frequency, active device. These oscillators are easily tuned, stable, and require little dc power

JFET reflection oscillator

A high frequency oscillator circuit is provided using a low cost junction type field effect transistor (T sub 1) with a tuned circuit connected to its gate. The frequency of operation is determined by the tuned circuit and the capacitance reflected from the source to the gate. The transistor is matched to the frequency of operation so that this frequency falls within the roll-off portion of the transistor's transconductance verses frequency curve, preferably somewhat above the 3 db point in frequency. Phase shift necessary to sustain oscillation occurs due to the operation of the transistor in the roll-off portion of the curve and the addition of a phase shifting network (R sub 1, C sub 1) at the source

Ankylosis-stabilized oscillator

One feature of this mechanism is reduction of self-modulation, a source of harmonic generation. Since amplitude of oscillation is large, cutoff frequency is varied in proportion to the amplitude and frequency of oscillation. While one transistor is experiencing a positive alteration, the other is experiencing a negative alteration. Net effect is reduction in self-modulation

Reactanceless synthesized impedance bandpass amplifier

An active R bandpass filter network is formed by four operational amplifier stages interconnected by discrete resistances. One pair of stages synthesize an equivalent input impedance of an inductance (L sub eq) in parallel with a discrete resistance (R sub o) while the second pair of stages synthesizes an equivalent input impedance of a capacitance (C sub eq) serially coupled to another discrete resistance (R sub i) coupled in parallel with the first two stages. The equivalent input impedances aggregately define a tuned resonant bandpass filter in the roll-off regions of the operational amplifiers