62 research outputs found

    Effect of cut-out on modal properties of edge cracked temperature-dependent functionally graded plates

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    Modal analysis is employed to analyze the vibration of temperature-dependent of Functionally Graded Plates (FGP) under a thermal environment in order to determine the natural frequencies and mode shapes. Theoretical formulation of various materials’ properties is done using the rule of mixtures. The natural frequencies and mode shapes of simply supported and clamped square plates are investigated as a function of crack, cutout, crack and cutout and temperature dependent properties. The Ansys program is employed for the purpose of analyzing the natural frequency and mode shape of a plate. Non-dimensional results are compared for temperature-dependent and temperature-independent FGP and subsequently validated according to known results obtained from the literature. Numerical results indicate the effect of crack, cutout, gradient index and temperature fields on the vibration characteristics and mode shapes. This study proves that natural frequency decreases with increasing gradient index (n) increasing the temperature and simultaneous presence of crack-cutout. In addition, clamped plates have a higher frequency than simply supported plates in all cases. Increasing temperatures lead to a maximum decrease in frequency at clamped FGP

    Structural health monitoring (SHM) for composite structure undergoing tensile and thermal testing

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    Application of ultrasonic guided waves generated by piezoelectric smart transducers has become one of the widely-used techniques in structural health monitoring. This technique has led to significant improvements and profound effects in the field of aircraft reliability and safety. Lamb wave propagation on composite plate-like structure undergoing mechanical testing is investigated in the paper. Smart PZT actuator/sensor is bonded on the carbon-fiber and glassfiber epoxy composites, which are subjected to tensile and thermal stress tests. The acquired results indicate the changes in scattering waves in composites materials due to the applied thermal and tensile force. Wavelet analysis was incorporated in this research work in order to distinguish different structural status

    Designing Tuneable Narrowband Bandpass Filter Utilizing Neural Network

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    Abstract: In this study we aim at adjusting the singleband and dualband bandpass filter designed in a ED02AH technology. The quality factor and center frequency of the filter will change by varactor diodes. Here, we use a neural network to acquire the proper biasing voltages of varactor diodes in order to obtain specific gain and quality factor

    Longitudinal vibrations analysis of vehicular clutch

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    This paper investigates the dynamic nature of clutch pedal in-cycle vibration as a powertrain NVH concern. The concern, referred to as "whoop" in industry, occurs during the clutch engagement and disengagement processes. The MATLAB and ADAMS as powerful programs for simulating dynamic systems to model clutch actuation system as a series of multi-bodies between the flywheel and the clutch pedal are used. Finally, the results are compared to experimental evidence and other models which were provided before

    High-Performance Air-Stable n-Type Carbon Nanotube Transistors with Erbium Contacts

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    O ver the past few decades, the continued down-scaling of the physical dimensions of silicon field-effect transistors (FETs) has been the main drive for achieving higher device density while improving the transistor performance in complementary metalÀoxideÀ semiconductor (CMOS) circuits. One of the principle benefits of the conventional scaling trend, namely, reducing the power consumption per computation, has diminished in recent years. In particular, power management is increasingly becoming a major challenge because of the inability to further decrease the operating voltage without compromising the performance of silicon FETs. Incorporation of alternative channel materials with superior carrier transport properties, as presently conceived, is a favorable strategy for the semiconductor industry to complement or replace silicon FETs. Among the promising candidates, carbon nanotubes (CNTs) are predicted to offer the most energy-efficient solution for computation compared with other channel materials, 1 owing to their unique properties such as ultrathin body and ballistic carrier transport in the channel. ABSTRACT So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals ; erbium, lanthanum, and yttrium ; are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation

    How to Report and Benchmark Emerging Field-Effect Transistors

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    Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.Comment: 15 pages, 3 figures, Under review at Nature Electronic
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