Effect of mechanical loading on the tuning of acoustic resonances in Ba x Sr1− x TiO3 thin films

The effect of mechanical loading on the tuning performance of a tunable Thin Film Bulk Acoustic Wave Resonator (TFBAR) based on a Ba0.3Sr0.7TiO3 (BST) thin film has been investigated experimentally and theoretically. A membrane-type TFBAR was fabricated by means of micromachining. The mechanical load on the device was increased stepwise by evaporating SiO2 on the backside of the membrane. The device was electrically characterized after each evaporation step and the results were compared to those obtained from modeling. The device with the smallest mechanical load exhibited a tuning of − 2.4% and − 0.6% for the resonance and antiresonance frequencies at a dc electric field of 615kV/cm, respectively. With increasing mechanical load a decrease in the tuning performance was observed. This decrease was rather weak if the thickness of the mechanical load was smaller or comparable to the thickness of the active BST film. If the thickness of the mechanical load was larger than the thickness of the active BST layer, a significant reduction in the tuning performance was observed. The weaker tuning of the antiresonance frequency was due to a reduced tuning of the sound velocity of the BST layer with increasing dc bias. The resonance frequency showed a reduced tuning due to a decrease in the effective electromechanical coupling factor of the device with increasing mechanical load. With the help of the modeling we could de-embed the intrinsic tuning performance of a single, non-loaded BST thin film. We show that the tuning performance of the device with the smallest mechanical load we fabricated is close to the intrinsic tuning characteristics of the BST laye

Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films

The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.Comment: 24 pages, 8 figures, submitted to Ferroelectric

Human-robot swarm interaction with limited situational awareness

This paper studies how an operator with limited situational awareness can collaborate with a swarm of simulated robots. The robots are distributed in an environment with wall obstructions. They aggregate autonomously but are unable to form a single cluster due to the obstructions. The operator lacks the bird’s-eye perspective, but can interact with one robot at a time, and influence the behavior of other nearby robots. We conducted a series of experiments. They show that untrained participants had marginal influence on the performance of the swarm. Expert participants succeeded in aggregating 85% of the robots while untrained participants, with bird’s-eye view, succeeded in aggregating 90%. This demonstrates that the controls are sufficient for operators to aid the autonomous robots in the completion of the task and that lack of situational awareness is the main difficulty. An analysis of behavioral differences reveals that trained operators learned to gain superior situational awareness

Conducting barrier electrodes for direct contact of PZT thin films on tungsten

Two W protection schemes for direct-contact bottom electrodes for PZT thin films, namely RuO2/Cr and RuO2/Ru, were compared with respect to protective performance and contact resistance up to 800 degrees C annealing temperature in oxygen. Cr clearly offers better protection for W than Ru-based schemes by forming a passivating Cr2O3 layer. No Cr is detected on the RuO2 surface, even after annealing at 800 degrees C, due to its entrapment by RuO2 by oxidoreduction. However, the formation of a continuous Cr2O3 film at the RuO2/Cr interface gives rise to an increased contact resistance above 650 degrees C. RuO2/Ru does not show any measurable contact resistance on W, but fails above 600 degrees C

Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films

The effect of mechanical loading on the tuning performance of a tunable Thin Film Bulk Acoustic Wave Resonator (TFBAR) based on a Ba0.3Sr0.7TiO3 (BST) thin film has been investigated experimentally and theoretically. A membrane-type TFBAR was fabricated by means of micromachining. The mechanical load on the device was increased stepwise by evaporating SiO2 on the backside of the membrane. The device was electrically characterized after each evaporation step and the results were compared to those obtained from modeling. The device with the smallest mechanical load exhibited a tuning of -aEuro parts per thousand 2.4% and -aEuro parts per thousand 0.6% for the resonance and antiresonance frequencies at a dc electric field of 615 kV/cm, respectively. With increasing mechanical load a decrease in the tuning performance was observed. This decrease was rather weak if the thickness of the mechanical load was smaller or comparable to the thickness of the active BST film. If the thickness of the mechanical load was larger than the thickness of the active BST layer, a significant reduction in the tuning performance was observed. The weaker tuning of the antiresonance frequency was due to a reduced tuning of the sound velocity of the BST layer with increasing dc bias. The resonance frequency showed a reduced tuning due to a decrease in the effective electromechanical coupling factor of the device with increasing mechanical load. With the help of the modeling we could de-embed the intrinsic tuning performance of a single, non-loaded BST thin film. We show that the tuning performance of the device with the smallest mechanical load we fabricated is close to the intrinsic tuning characteristics of the BST layer

Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films

Several SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon modes, particularly ferroelectric soft mode, in the films were determined quantitatively. The compressed epitaxial STO films on (100) La0.18Sr0.82Al0.59-Ta0.41O3 substrates (strain 0.9%) show strongly stiffened phonon responses, whereas the soft mode in polycrystalline film on (0001) sapphire substrate shows a strong broadening due to grain boundaries and/or other inhomogeneities and defects. The stiffened soft mode is responsible for a much lower static permittivity in the plane of the compressed film than in the bulk samples.Comment: 11 page

Excess lead in the perovskite lattice of PZT thin films made by in-situ reactive sputtering

The incorporation of up to 40 % lead excess into the perovskite lattice of Pb(Zr,Ti)O-3 (PZT) has been investigated. Three independent chemical composition analysis methods confirmed the correct determination of the lead excess, present as Pb2O3. High resolution TEM excludes any second phases and restricts the occurrence of lead excess to the perovskite lattice, suggesting a lead oxide perovskite of the form Pb2+Pb4+O3 with a 4-valent ion on the B-site. PZT containing such lead excess is thus a solid solution of PbZrO3, PbTiO3 and PbPbO3. The measured volume increase of the lattice due to a larger average B-ion matches very well with the calculated behavior based on standard ion radii and the B-ion radius dependence of the unit cell dimensions of PZT crystals. Structure factors as determined from Synchrotron X-ray diffraction are much better compatible with the B-site lead model than with the standard PZT ion lattice

Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure, and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition has been reported, the ferroelectric measurement has not been conducted due to the peel-off morphology of the film. The current paper investigates the improvement of an epitaxial PZT thin film deposited via a hydrothermal method. By adjusting the position at which the substrate was suspended in the solution, smooth morphology surface was successfully obtained. As a bottom electrode, a 200-nm SrRuO3 thin film was deposited on SrTiO3 single crystals, and the PZT thin film was deposited on SrRuO3. The remanent polarization 2Pr and coercive electric field for PZT on SrRuO3/SrTiO3 (001) were 17.1 muC/cm(2) and 36 kV/cm, respectively, and those of PZT on SrRuO3/SrTiO3 (111) were 32.7 muC/cm(2) and 59 kV/cm, respectively. The reason for large imprint electrical field, 91 kV/cm and 40 kV/cm for each film, was unclear at this stage, although it is associated with self-alignment poling direction. This self-alignment poling direction was confirmed via scanning nonlinear dielectric microscopy and is thought to have been related to the deposition mechanisms