How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)

The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by different mechanisms of aggregation, involving the change of the critical nucleus size. Remarkably, the small ones give rise to a wealth of "monomers" through the erosion of the step edges, favoring the explosive nucleation of the large ones.Comment: 10 pages, 3 figures. Submitted to Phys. Rev. Let

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)

The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.Comment: 12 pages, 5 figure

Systematics of electronic and magnetic properties in the transition metal doped Sb2_2Te3_3 quantum anomalous Hall platform

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state.Comment: 40 pages, 13 figure

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X=Cl, Br, I)

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).The noncentrosymmetric semiconductors BiTeX(X=Cl,Br,I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single-crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), and density functional theory calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X=Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.This work was financially supported by the Deutsche Forschungsgemeinschaft through FOR1162 and partly by the Ministry of Education and Science of Russian Federation (Grant No. 2.8575.2013), the Russian Foundation for Basic Research (Grants No. 15-02-01797 and No. 15-02-02717), and Saint Petersburg State University (Project No. 11.50.202.2015).Peer Reviewe

Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators

We provide a detailed microscopic characterization of the influence of defects-induced disorder onto the Dirac spectrum of three dimensional topological insulators. By spatially resolved Landau-levels spectroscopy measurements, we reveal the existence of nanoscale fluctuations of both the Dirac point energy as well as of the Dirac-fermions velocity which is found to spatially change in opposite direction for electrons and holes, respectively. These results evidence a scenario which goes beyond the existing picture based on chemical potential fluctuations. The findings are consistently explained by considering the microscopic effects of local stain introduced by defects, which our model calculations show to effectively couple to topological states, reshaping their Dirac-like dispersion over a large energy range. In particular, our results indicate that the presence of microscopic spatially varying stain, inevitably present in crystals because of the random distribution of defects, effectively couple to topological states and should be carefully considered for correctly describing the effects of disorder

Patterning graphene nanostripes in substrate-supported functionalized graphene: A promising route to integrated, robust, and superior transistors

It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interaction combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized (hydrogenated or fluorinated) graphene using electron-beam lithography. We also propose that parallelizing a couple of graphene nanostripes in a transistor should be preferred for practical application, which is also very useful for transistors based on graphene nanoribbon.Comment: Frontiers of Physics (2012) to be publishe

Permohonan Kasasi Penuntut Umum Terhadap Putusan Bebas Judex Factie tanpa Mempertimbangkan Fakta Persidangan Sebagai Alat Bukti Petunjuk dalam Perkara Narkotika (Studi Putusan Mahkamah Agung Nomor: 1359K/Pid,Sus/2013)

This report aims to review of an appeal to reason by prosecutors against kuhap and consideration Judex Juris in an appeal to answer in matters of narcotics. The kind of research writer use in preparing research this law is research normative law is perspective. Approach that used is case approach. A source of a law used is the primary law and secondary law. Legal materials analysis techniques used by the author is to use legal reasoning by syllogism deduction method. Based on the results of research and discussion an appeal to conclude that proposal by prosecutors with reason judex factie do not judge properly having no regard to the trial for evidence guidance has qualified materially as stipulated in section of 253 paragraph (1) letter a Criminal Procedure Code. In this case Judex Factie not apply properly to ignore the facts at the trial. Related to the legal arguments in the Supreme court judge granted the public prosecutor’s appeal on the grounds Judex Factie not apply the law in the case of Narcotics is in accordance with the provisions contained in Article 256 jo Article 193 paragraph (1). Keywords: Prosecutors, Judex Factie, Narcotic