32 research outputs found

    Efficient high order suppression system for a metrology beamline

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    High quality metrology with synchrotron radiation requires in particular a very high spectral purity of the incident beam. This is usually achieved by a set of transmission filters with suitable absorption edges to suppress high order radiation of the monochromator. The at wavelength metrology station at a BESSY II bending magnet collimated plane grating monochromator c PGM beamline has recently commissioned a high order suppression system HiOS based on four reflections from mirrors which can be inserted into the beam path. Two pairs of mirrors are aligned parallel so as not to disturb the original beam path and are rotated clockwise and counter clockwise. Three sets of coatings are available for the different energy ranges and the incidence angle is freely tunable to find the optimum figure of merit for maximum suppression at maximum transmission for each photon energy required. Measured perfor mance results of the HiOS for the EUV and XUV range are compared with simulations, and applications are discusse

    Optical constants of beryllium thin layers determined from Mo Be multilayers in spectral range 90 to 134 eV

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    Mo Be multilayers are promising optical elements for extreme ultraviolet EUV lithography and space optics. Experimentally derived optical constants are necessary for accurate and reliable design of beryllium containing optical coatings. We report optical constants of beryllium derived from synchrotron radiation based reflectivity data of Mo Be multilayers. Results are in good agreement with available data in the literature obtained from the well known absorption measurements of beryllium thin films or foils. We demonstrate synchrotron based at wavelength reflectometry as an accurate and non destructive technique for deriving EUV optical constants for materials that are difficult or unstable to make thin foils for absorption measurement

    Exploring EUV near absorption edge optical constants for enhanced and sensitive grazing incidence reflectivity

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    A characterization procedures to test multilayers in the EUV and soft X-Ray wavelengths are theoretically studied in this paper. The fact that most candidate elements have absorption edge energies in the EUV and soft X-Ray has demanded extensive studies on the optical constants and their possible impact on multilayer design and reflectivity. Thus, EUV and soft X-Ray multilayers are preliminary designed and tested for various parameters. Effects and impacts of interface roughness, interlayer thickness, optical constants fluctuations, different phases of interlayer compounds on the reflectivity of multilayers are investigated in this piece of work. Two theoretical models are used each contributing different properties of the multilayers. Near absorption edge and off-absorption edge wavelengths are compared and contrasted to investigate what optical constants near the resonance edges can render in the EUV and soft X-Ray regime. Almost in all simulations the near absorption edge reflectivity have shown superior sensitivity to fluctuations of various design parameters. In addition, possible engineering tips of near absorption edge optical constants are indicated

    Deposition and characterization of B4_{4}C/CeO2_{2} multilayers at 6.x nm extreme ultraviolet wavelengths

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    New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet(EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha(8 keV) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers.Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design

    Analysis of buried interfaces in multilayer mirrors using grazing incidence extreme ultraviolet reflectometry near resonance edges

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    Accurate measurements of optical properties of multilayer (ML) mirrors and chemical compositions of interdiffusion layers are particularly challenging to date. In this work, an innovative and nondestructive experimental characterization method for multilayers is discussed. The method is based on extreme ultraviolet (EUV) reflectivity measurements performed on a wide grazing incidence angular range at an energy near the absorption resonance edge of low-Z elements in the ML components. This experimental method combined with the underlying physical phenomenon of abrupt changes of optical constants near EUV resonance edges enables us to characterize optical and structural properties of multilayers with high sensitivity. A major advantage of the method is to perform detailed quantitative analysis of buried interfaces of multilayer structures in a nondestructive and nonimaging setup. Coatings of Si/Mo multilayers on a Si substrate with period =16.4  nm, number of bilayers =25, and different capping structures are investigated. Stoichiometric compositions of Si-on-Mo and Mo-on-Si interface diffusion layers are derived. Effects of surface oxidation reactions and carbon contaminations on the optical constants of capping layers and the impact of neighboring atoms’ interactions on optical responses of Si and Mo layers are discussed
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