Advanced propulsion concepts

The topics presented are covered in viewgraph form. The programmatic objective is to establish the feasibility of propulsion technologies for vastly expanded space activity. The technical objective is a revolutionary performance sought, such as: (1) about 1 kg/kW specific mass; (2) specific impulse tailored to mission requirements; (3) ability to use in-situ resources; (4) round-trips to Mars in months; (5) round-trips to outer planets in 1 to 2 years; and (6) the capability for robotic mission beyond the solar system

Industrializing the near-earth asteroids: Speculations on human activities in space in the latter half of the 21st century

The use of solar system resources for human industry can be viewed as a natural extension of the continual growth of our species' habitat. Motivations for human activities in space can be discussed in terms of five distinct areas: (1) information processing and collection; (2) materials processing; (3) energy production to meet terrestrial power needs; (4) the use of extraterrestrial materials; and (5) disaster avoidance. When considering 21st-Century activities in space, each of these basic motivations must be treated in light of issues likely to be relevant to the 21st-Century earth. Many of the problems facing 21st-Century earth may stem from the need to maintain the world population of 8 to 10 billion people as is projected from expected growth rates. These problems are likely to include managing the impact of industrial processes on the terrestrial biosphere while providing adequate energy production and material goods for the growing population. The most important human activities in space in the latter half of the 21st Century may be associated with harnessing the resources of the near-earth asteroids for industrial processes. These above topics are discussed with an emphasis on space industrialization

Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well

A shallow zinc diffusion technique is used to selectively disorder a GaAs quantum well creating nanometer scale wire structures. Spectrally resolved cathodoluminescence images of the structures are presented as well as local spectra of cathodoluminescence emission from the structures. Blue shifting of the luminescence from the wire structures is observed

Vapor phase synthesis of crystalline nanometer-scale GaAs clusters

We report the synthesis of crystalline nanometer-scale GaAs clusters in the 5-10 nm size regime. The clusters are formed by the homogeneous nucleation of a nonequilibrium vapor created by the explosive vaporization of a bulk GaAs sample in an inert atmosphere. High resolution electron microscopy and diffraction show that the clusters have zincblende crystal structure and are faceted. Optical measurements on the particles are suggestive of quantum confinement effects

Nanometer-scale GaAs clusters from organometallic precursors

We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs particles in the 10–20 nm range. The influence of growth temperature and reactant concentration on cluster morphology is discussed

A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime