Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography

A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer on a thermoelectric cooler mount. We used infrared thermal radiation images of the black-painted area on the dummy wafer and an unbiased LED wafer at two different temperatures to determine the factors that degrade the accuracy of temperature measurement, i.e., the non-uniform response of the instrument, superimposed offset radiation, reflected radiation, and emissivity map of the LED surface. By correcting these factors from the measured infrared thermal radiation images of biased LEDs, we determined a precise absolute temperature image. Consequently, we could observe from where the local self-heat emerges and how it distributes on the emitting area of the LEDs. The experimental results demonstrated that highly localized self-heating and a remarkable temperature gradient, which are detrimental to LED performance and reliability, arise near the p-contact edge of the LED surface at high injection levels owing to the current crowding effect

Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy

Rare-earth (RE) impurities doped GaN are highly promising candidates for light emitting device applications due to their efficient electroluminescence properties at room temperature. Among those, Eu doped GaN has been identified as an excellent material for the red spectral region due to its strong emission at 620 nm. As a transition internal to the Eu doping atom (4f-4f), light emission originates in a much smaller complex than the more flexibly controllable quantum structures of wells, wires, and dots. This is thought to make the center less susceptible to structural defects and in particular radiation damage in the lattice host. Nevertheless, the lattice host is crucial for providing the excitation in from of free electrons and holes. In this respect, the actual lattice site Eu occupies in the host lattice, i.e. in GaN, is important. A large fraction of Eu atoms are typically inactive which must be attributed to their lattice site and local environment. GaN films implanted with Eu to concentrations of {approx}10{sup 18} cm{sup -3} were subjected to a highly directed beam of 500 keV He{sup +} at a dose of 5 x 10{sup 14} cm{sup -2}. By means of a shadow mask, irradiated and unexposed regions lie very close to each other on the same sample. We used optical and structural analysis to identify the exerted radiation damage. At the full radiation dose, photoluminescence intensity has decayed to {approx}0.01 of its initial value. From the dose dependence of the radiation decay we previously concluded, that this decay is in part due to the destruction of radiative Eu sites [J.W. Tringe, unpublished (2006)]. Along the transition from virgin to irradiated material we analyze the accumulated damage in terms of surface morphology (atomic force microscopy), crystallinity (x-ray diffraction), and phonon dispersion using micro-Raman spectroscopy. In addition to the well-studied E{sub 2}(high) mode, two new vibrational modes at 659 cm{sup -1} and 201 cm{sup -1} were observed in the Eu implanted and annealed sample, prior to He{sup +} irradiation. These modes are either remnants of the implantation damage or related to the Eu impurity. As such they can be indicative of the actual lattice site the Eu atom resides on. After irradiation, broad Raman modes at 300 cm-1 are being observed. This band indicates disorder activated Raman scattering (DARS) due to the radiation damage. An additional narrow mode appears at 672 cm{sup -1}, which can possibly be due to a nitrogen vacancy related vibrational mode. The continuous transition from irradiated to un-irradiated sample allows the direct evolution of radiation damage and its coordinated effects in structural, optical and vibrational properties. By its systematic correlation we anticipate to be able to elucidate the Eu lattice interaction and the processes of radiation damage

Sensor Fabrication Method for in Situ Temperature and Humidity Monitoring of Light Emitting Diodes

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06 ± 0.005 (Ω/°C) and 0.033 pF/%RH, respectively

In Situ Measurement of the Junction Temperature of Light Emitting Diodes Using a Flexible Micro Temperature Sensor

This investigation aimed to fabricate a flexible micro resistive temperature sensor to measure the junction temperature of a light emitting diode (LED). The junction temperature is typically measured using a thermal resistance measurement approach. This approach is limited in that no standard regulates the timing of data capture. This work presents a micro temperature sensor that can measure temperature stably and continuously, and has the advantages of being lightweight and able to monitor junction temperatures in real time. Micro-electro-mechanical-systems (MEMS) technologies are employed to minimize the size of a temperature sensor that is constructed on a stainless steel foil substrate (SS-304 with 30 μm thickness). A flexible micro resistive temperature sensor can be fixed between the LED chip and the frame. The junction temperature of the LED can be measured from the linear relationship between the temperature and the resistance. The sensitivity of the micro temperature sensor is 0.059 ± 0.004 Ω/°C. The temperature of the commercial CREE® EZ1000 chip is 119.97 °C when it is thermally stable, as measured using the micro temperature sensor; however, it was 126.9 °C, when measured by thermal resistance measurement. The micro temperature sensor can be used to replace thermal resistance measurement and performs reliably

Structural and Optical Characterization of Group III-Nitride Compound semiconductors

The structural properties of the group III-nitrides including AlN, Ga1-xMnxN, GaN:Cu, and InN were investigated by Raman spectroscopy. Absorption and photoluminescence spectroscopy were utilized to study the optical properties in these materials. The analysis of physical vapor transport grown AlN single crystals showed that oxygen, carbon, silicon, and boron are the major impurities in the bulk AlN. The Raman analysis revealed high crystalline quality and well oriented AlN single crystals. The absorption coefficient of AlN single crystals were assessed in the spectral range from deep UV to the FIR. The absorption and photoluminescence analysis indicate that, in addition to oxygen, carbon, boron, and silicon, contribute to the optical properties of bulk AlN crystals. In situ Cu-doped GaN epilayers with Cu concentrations in the range of 2x10^16 cm-3 - 5x1017 cm-3, grown on sapphire substrate by metal organic chemical vapor deposition, were investigated by Raman and PL spectroscopy. The Raman study revealed high crystalline GaN:Cu layers with minimal damage to the hexagonal lattice structure due to the Cu incorporation. A strong Cu related emission band at 2.4 eV was assigned to Cu induced optical transitions between deep Cu states and shallow residual donor states. Compensation of Cu states by residual donors and poor activation probability of deep Cu states are responsible for semi-insulating electrical conductivity. Ferromagnetic Ga1-xMnxN epilayers, grown by MOCVD with Mn concentration from x = 0 to x = 1.5, were optically investigated by Raman, PL, and transmission spectroscopy. The Raman studies revealed Mn-related Raman peaks at 300 cm-1, 609 cm-1, and 669 cm-1. Mn-related absorption and emission bands in Ga1-xMnxN were observed at 1.5 eV and 3.0 eV, respectively. The structural properties of InN layers, grown by high pressure-CVD with different free carrier concentrations, were analyzed by Raman spectroscopy. The Raman results show that the InN layers have high crystalline quality. The free carriers in layers were calculated by using the Lindhard-Mermin dielectric function taking into account finite wave vectors for various scattering processes including forbidden Frohlich, deformational potential associated with allowed electro-optic, and charge density fluctuation, mechanisms. The free carrier concentrations in the layers are below 1x10^20 cm-3