Blueshift in MgxZn1-xO alloys: nature of bandgap bowing

A Mg composition-dependent blueshift has been studied in MgxZn1−xO alloys deposited on 6H-SiC(0001) substrates. The localized exciton energy in MgxZn1−xO alloys for x ∼ 0.3 was blueshifted in the range 212–248 meV. The large negative bowing parameter was estimated in MgxZn1−xO alloys to be 4.72±0.84 eV. This large bandgap bowing emphasizes the Stokes shift, which has been attributed to the existence of spontaneous polarization effects due to the polar growth of MgxZn1−xO/SiC heterostructure and local compositional inhomogeneity

Growth of PbSnTe single crystal by traveling-zone method in low gravity (M-2)

The single-crystal lead tin telluride (PbSnTe) semiconductor is most promising as a laser radiation element and infrared detecting element in the far infrared region. However, it is very difficult to grow a large single crystal with a homogeneous composition on Earth because the elements have a very strong tendency to separate from each other in the molten phase due to differences in their specific gravities and melting points. The purpose of the experiment is to grow a single crystal of PbSnTe by a traveling zone method in microgravity, and to study the spatial fluctuation of the composition and the electrical properties of the crystal

Pitfalls in the analysis of low-temperature thermal conductivity of high-Tc cuprates

Recently, it was proposed that phonons are specularly reflected below about 0.5 K in ordinary single-crystal samples of high-T_c cuprates, and that the low-temperature thermal conductivity should be analyzed by fitting the data up to 0.5 K using an arbitrary power law. Such an analysis yields a result different from that obtained from the conventional analysis, in which the fitting is usually restricted to a region below 0.15 K. Here we show that the proposed new analysis is most likely flawed, because the specular phonon reflection means that the phonon mean free path \ell gets LONGER than the mean sample width, while the estimated \ell is actually much SHORTER than the mean sample width above 0.15 K.Comment: 4 pages, 1 figure; manuscript for the Proceedings of LEHTSC2007 to be published in Journal of Physics: Conference Serie

Coherence and superconductivity in coupled one-dimensional chains: a case study of YBa2_{2}Cu3_{3}Oy_{y}

We report the infrared (IR) response of Cu-O chains in the high-$T_{c}$ superconductor YBa$_{2}$Cu$_{3}$O$_{y}$ over the doping range spanning $y=6.28-6.75$. We find evidence for a power law scaling at mid-IR frequencies consistent with predictions for Tomonaga-Luttinger liquid, thus supporting the notion of one-dimensional transport in the chains. We analyze the role of coupling to the CuO$_{2}$ planes in establishing metallicity and superconductivity in disordered chain fragments.Comment: 4 pages, 3 figure

Electronic Phase Diagram of High-T_c Cuprate Superconductors from a Mapping of the In-Plane Resistivity Curvature

We propose that Resistivity Curvature Mapping (RCM) based on the in-plane resistivity data is a useful way to objectively draw an electronic phase diagrams of high-T_c cuprates, where various crossovers are important. In particular, the pseudogap crossover line can be conveniently determined by RCM. We show experimental phase diagrams obtained by RCM for Bi_{2}Sr_{2-z}La_{z}CuO_{6+\delta}, La_{2-x}Sr_{x}CuO_{4}, and YBa_{2}Cu_{3}O_{y}, and demonstrate the universal nature of the pseudogap crossover. Intriguingly, the electronic crossover near optimum doping depicted by RCM appears to occur rather abruptly, suggesting that the quantum critical regime, if exists, must be very narrow.Comment: 4 pages, 3 color figures, final version accepted for publication in Phys. Rev. Let

Universal scaling for the spin-electricity conversion on surface states of topological insulators

We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on the TI surfaces are negligibly small owing to the inserted Cu layer. Voltage signals produced by the spin-electricity conversion are clearly observed, and enhanced with decreasing temperature in line with the dominated surface transport at lower temperatures. The efficiency of the spin-electricity conversion is greater for TI samples with higher resistivity of bulk states and longer mean free path of surface states, consistent with the surface spin-electricity conversion