Growth of PbSnTe single crystal by traveling-zone method in low gravity (M-2)

Abstract

The single-crystal lead tin telluride (PbSnTe) semiconductor is most promising as a laser radiation element and infrared detecting element in the far infrared region. However, it is very difficult to grow a large single crystal with a homogeneous composition on Earth because the elements have a very strong tendency to separate from each other in the molten phase due to differences in their specific gravities and melting points. The purpose of the experiment is to grow a single crystal of PbSnTe by a traveling zone method in microgravity, and to study the spatial fluctuation of the composition and the electrical properties of the crystal