Silicon ribbon growth by a capillary action shaping technique

Substantial improvements in ribbon surface quality are achieved with a higher melt meniscus than that attainable with the film-fed (EFG) growth technique. A capillary action shaping method is described in which meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. Topics discussed cover experimental apparatus and growth procedures; die materials investigations, fabrication and evaluation; process development for 25 mm, 38 mm, 50 mm and 100 mm silicon ribbons; and long grain direct solidification of silicon. Methods for the structural and electrical characterization of cast silicon ribbons are assessed as well as silicon ribbon technology for the 1978 to 1986 period

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt

Silicon ribbon growth by a capillary action shaping technique

The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%

Method of increasing minority carrier lifetime in silicon web or the like

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C

Silicon ribbon growth by a capillary action shaping technique

The crystal growth method described is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. A capillary die is so designed that the bounding edges of the die top are not parallel or concentric with the growing ribbon. The new dies allow a higher melt meniscus with concomitant improvements in surface smoothness and freedom from SiC surface particles, which can degrade perfection

Electrical and Structural Characterization of Web Dendrite Crystals

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs

Low cost silicon solar arrays

Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%

Silicon Ribbon Growth by a Capillary Action Shaping Technique

The crystal-growth method under investigation is a capillary action shaping technique. Meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary .action. supplies replacement material. In this report, a new capillary die design is described. It represents a departure from the die types used for edge-defined, film-fed growth, in that the bounding edges of the die top are not parallel or concentric with the growing ribbon. The new dies allow a higher melt meniscus with concomitant improvements in surface smoothness and freedom from SiC surface particles, which can degrade perfection. Also in this reporting period, ribbons were grown for delivery to JPL. Twenty ribbons and 30 ribbon samples were shipped. Detailed dimensional characteristics of most ribbons grown during the past year are presented. Finally, our initial progress in the growth of 38-mm (1-1/2-inch)-wide ribbons, up to 46 cm in length, is reported