Interface relaxation and electrostatic charge depletion in the oxide heterostructure LaAlO3/SrTiO3

Performing an analysis within density functional theory, we develop insight into the structural and electronic properties of the oxide heterostructure LaAlO3/SrTiO3. Electrostatic surface effects are decomposed from the internal lattice distortion in order to clarify their interplay. We first study the interface relaxation by a multi-layer system without surface, and the surface effects, separately, by a substrate-film system. While elongation of the TiO6 octahedra at the interface enhances the metallicity, reduction of the film thickness has the opposite effect due to a growing charge depletion. The interplay of these two effects, as reflected by the full lattice relaxation in the substrate-film system, however, strongly depends on the film thickness. An inversion of the TiO6 distortion pattern for films thinner than four LaAlO3 layers results in an insulating state.Comment: 10 pages, 7 figures, accepted by Europhysics Letter

From VO2 to V2O3: The Metal-Insulator Transition of the Magneli Phase V6O11

The metal-insulator transition (MIT) of V6O11 is studied by means of electronic structure calculations using the augmented spherical wave method. The calculations are based on density functional theory and the local density approximation. Changes of the electronic structure at the MIT are discussed in relation to the structural transformations occuring simultaneously. The analysis is based on a unified point of view of the crystal structures of V6O11, VO2, and V2O3. This allows to group the electronic bands into states behaving similar to the dioxide or the sesquioxide. While the sesquioxide-like V 3d_yz states show rather weak changes on entering the low-temperature structure, some of the dioxide-like V 3d_x^2-y^2 states display splittings and shifts similar to those known from VO2. The MIT of V6O11 arises as a combination of changes appearing in both of these compounds. Our results shed new light onto the role of particular electronic states for the MIT of V2O3.Comment: 7 pages, 6 figures, accepted by Europhys. Let

Cu2Se and Cu Nanocrystals as Local Sources of Copper in Thermally Activated in Situ Cation Exchange

Among the different synthesis approaches to colloidal nanocrystals, a recently developed toolkit is represented by cation exchange reactions, where the use of template nanocrystals gives access to materials that would be hardly attainable via direct synthesis. Besides, postsynthetic treatments, such as thermally activated solid-state reactions, represent a further flourishing route to promote finely controlled cation exchange. Here, we report that, upon in situ heating in a transmission electron microscope, Cu2Se or Cu nanocrystals deposited on an amorphous solid substrate undergo partial loss of Cu atoms, which are then engaged in local cation exchange reactions with Cu “acceptor” phases represented by rod- and wire-shaped CdSe nanocrystals. This thermal treatment slowly transforms the initial CdSe nanocrystals into Cu2−xSe nanocrystals, through the complete sublimation of Cd and the partial sublimation of Se atoms. Both Cu “donor” and “acceptor” particles were not always in direct contact with each other; hence, the gradual transfer of Cu species from Cu2Se or metallic Cu to CdSe nanocrystals was mediated by the substrate and depended on the distance between the donor and acceptor nanostructures. Differently from what happens in the comparably faster cation exchange reactions performed in liquid solution, this study shows that slow cation exchange reactions can be performed at the solid state and helps to shed light on the intermediate steps involved in such reactions

Antisites and anisotropic diffusion in GaAs and GaSb

The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate. (C) 2013 AIP Publishing LLC