7,587 research outputs found
Fundamentals of metal-semiconductor contacts
The fundamentals of metal-semiconductor contacts are discussed. Contact resistance values for solar cells are also discussed
Creep at elevated temperatures and high vacuum Semiannual report no. 3, May 1 - Oct. 31, 1965
Creep tests on polycrystalline copper with surface reoxidized or cleaned by argon bombardment at elevated temperatures and high vacuu
Non-perturbative plaquette in 3d pure SU(3)
We present a determination of the elementary plaquette and, after the
subsequent ultraviolet subtractions, of the finite part of the gluon
condensate, in lattice regularization in three-dimensional pure SU(3) gauge
theory. Through a change of regularization scheme to MSbar and a matching back
to full four-dimensional QCD, this result determines the first non-perturbative
contribution in the weak-coupling expansion of hot QCD pressure.Comment: 6 pages, 4 figures, talk presented at Lattice 2005 (Non-zero
temperature and density
A simple numerical method for the calculation of the laminar boundary layer
An iteration difference method for the calculation of the incompressible laminar boundary layer is described. The method uses Prandtl's boundary layer equation and the boundary conditions directly and permits the attainment of an arbitrary accuracy. The method has been tested successfully in the continuation of the Blasius profile on the flat plate, on the circular cylinder investigated by Heimenz and on an elliptical cylinder of fineness ratio 1:4. The method makes possible the testing of previously developed methods, all of which contain important assumptions
Coherent transport in Nb/delta-doped-GaAs hybrid microstructures
Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is
presented. The structures fabrication procedure is based on delta-doped layers
grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap
layer to protect the active semiconductor layers during ex situ transfer. The
superconductor is then sputter deposited in situ after thermal desorption of
the protective layer. Two types of structures in particular will be discussed,
i.e., a reference junction and the engineered one that contains an additional
insulating AlGaAs barrier inserted during the growth in the semiconductor. This
latter configuration may give rise to controlled interference effects and
realizes the model introduced by de Gennes and Saint-James in 1963. While both
structures show reflectionless tunneling-dominated transport, only the
engineered junction shows additionally a low-temperature single marked
resonance peaks superimposed to the characteristic Andreev-dominated subgap
conductance. The analysis of coherent magnetotransport in both microstructures
is successfully performed within the random matrix theory of Andreev transport
and ballistic effects are included by directly solving the Bogoliubov-de Gennes
equations. The impact of junction morphology on reflectionless tunneling and
the application of the employed fabrication technique to the realization of
complex semiconductor-superconductor systems are furthermore discussed.Comment: 9 pages, 8 figures, invited review paper, to be published in Mod.
Phys. Lett.
Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices
Voltage modulated electroluminescence spectra and low frequency ({\leq} 100
kHz) impedance characteristics of electroluminescent diodes are studied.
Voltage modulated light emission tracks the onset of observed negative
capacitance at a forward bias level for each modulation frequency. Active
participation of sub-bandgap defect states in minority carrier recombination
dynamics is sought to explain the results. Negative capacitance is understood
as a necessary dielectric response to compensate any irreversible transient
changes in the minority carrier reservoir due to radiative recombinations
mediated by slowly responding sub-bandgap defects. Experimentally measured
variations of the in-phase component of modulated electroluminescence spectra
with forward bias levels and modulation frequencies support the dynamic
influence of these states in the radiative recombination process. Predominant
negative sign of the in-phase component of voltage modulated
electroluminescence signal further confirms the bi-molecular nature of light
emission. We also discuss how these states can actually affect the net density
of minority carriers available for radiative recombination. Results indicate
that these sub-bandgap states can suppress external quantum efficiency of such
devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure
Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters
Numerical and semi-analytical models are presented for
photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion
of electrons, inhomogeneous photogeneration, and bulk and surface recombination
into account. The efficiencies of PETE devices with silicon cathodes are
calculated. Our model predicts significantly different electron affinity and
temperature dependence for the device than the earlier model based on a
rate-equation description of the cathode. We show that surface recombination
can reduce the efficiency below 10% at the cathode temperature of 800 K and the
concentration of 1000 suns, but operating the device at high injection levels
can increase the efficiency to 15%.Comment: 5 pages, 4 figure
Yeah, Right, Uh-Huh: A Deep Learning Backchannel Predictor
Using supporting backchannel (BC) cues can make human-computer interaction
more social. BCs provide a feedback from the listener to the speaker indicating
to the speaker that he is still listened to. BCs can be expressed in different
ways, depending on the modality of the interaction, for example as gestures or
acoustic cues. In this work, we only considered acoustic cues. We are proposing
an approach towards detecting BC opportunities based on acoustic input features
like power and pitch. While other works in the field rely on the use of a
hand-written rule set or specialized features, we made use of artificial neural
networks. They are capable of deriving higher order features from input
features themselves. In our setup, we first used a fully connected feed-forward
network to establish an updated baseline in comparison to our previously
proposed setup. We also extended this setup by the use of Long Short-Term
Memory (LSTM) networks which have shown to outperform feed-forward based setups
on various tasks. Our best system achieved an F1-Score of 0.37 using power and
pitch features. Adding linguistic information using word2vec, the score
increased to 0.39
Ohmic contacts to n-type germanium with low specific contact resistivity
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p>
2MASS J05162881+2607387: A New Low-Mass Double-Lined Eclipsing Binary
We show that the star known as 2MASS J05162881+2607387 (hereafter J0516) is a
double-lined eclipsing binary with nearly identical low-mass components. The
spectroscopic elements derived from 18 spectra obtained with the High
Resolution Spectrograph on the Hobby-Eberly Telescope during the Fall of 2005
are K_1=88.45 +/- 0.48 km/s and K_2=90.43 +/- 0.60 km/s, resulting in a mass
ratio of$q=K_1/K_2 = 0.978 +/- 0.018 and minimum masses of M_1 sin^{3}i=0.775
+/- 0.016 solar masses and M_2 sin^{3}i=0.759 +/- 0.012 solar masses,
respectively. We have extensive differential photometry of J0516 obtained over
several nights between 2004 January-March (epoch 1) and 2004 October-2005
January plus 2006 January (epoch 2) using the 1m telescope at the Mount Laguna
Observatory. The source was roughly 0.1 mag brighter in all three bandpasses
during epoch 1 when compared to epoch 2. Also, phased light curves from epoch 1
show considerable out-of-eclipse variability, presumably due to bright spots on
one or both stars. In contrast, the phased light curves from epoch 2 show
little out-of-eclipse variability. The light curves from epoch 2 and the radial
velocity curves were analyzed using our ELC code with updated model atmospheres
for low-mass stars. We find the following: M_1=0.787 +/- 0.012 solar masses,
R_1=0.788 +/- 0.015 solar radii, M_2=0.770 +/- 0.009 solar masses, and
R_2=0.817 +/- 0.010 solar radii. The stars in J0516 have radii that are
significantly larger than model predictions for their masses, similar to what
is seen in a handful of other well-studied low-mass double-lined eclipsing
binaries. We compiled all recent mass and radius determinations from low-mass
binaries and determine an empirical mass-radius relation of the form R = 0.0324
+ 0.9343M + 0.0374M^2, where the quantities are in solar units.Comment: 16 pages, 10 figures (Figure 1 has degraded quality), to appear in
Ap
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