Impact of band-bending on the k-resolved electronic structure of Si-doped GaN

Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes the material useful is not only its large bandgap but also that it can be heavily doped to become metallic. Here, we apply soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) to metallic Si-doped GaN to explore the electron density and momentum-resolved band dispersions of the valence and conduction electrons varying through the surface band-bending region. We find an upward band bending, where the measured band occupation reduces toward the surface, as probed with low photon energies 1.4 keV, where the photoelectron mean free path exceeds the spatial extent of the band-bending region. Our quantitative analysis of the experimental data describes the potential variation in the band-bending region via self-consistent Poisson-Schrödinger equations. We put forward an insightful model to simulate the ARPES spectra from this region through summing up the contribution from all atomic layers, weighted by the photoelectron mean free path, under in-phase conditions achieved at particular values of the photoelectron out-of-plane momentum. The model adequately describes the peculiarities of the ARPES spectra caused by the surface band bending, including the photon-energy dependence of the apparent band occupation and Fermi-surface area, and allows accurate determination of the band-bending profile and values of the photoelectron mean free path. Finally, comparison of our data with supercell density functional theory calculations reveals the preferential location of Si atoms as substitutional for Ga, with the doped electrons entering the GaN conduction bands without formation of separate impurity states as would occur for Si interstitials. Our theoretical and experimental results resolve fundamental questions underpinning device performance of the GaN-based and other semiconductor materials in general and demonstrate a general methodology for quantitative studies of electron states in the band-bending region.ISSN:2643-156

Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces

The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.ISSN:2198-384

Signatures of Sixfold Degenerate Exotic Fermions in a Superconducting Metal PdSb2

Multifold degenerate points in the electronic structure of metals lead to exotic behaviors. These range from twofold and fourfold degenerate Weyl and Dirac points, respectively, to sixfold and eightfold degenerate points that are predicted to give rise, under modest magnetic fields or strain, to topological semimetallic behaviors. The present study shows that the nonsymmorphic compound PdSb2 hosts six-component fermions or sextuplets. Using angle-resolved photoemission spectroscopy, crossing points formed by three twofold degenerate parabolic bands are directly observed at the corner of the Brillouin zone. The group theory analysis proves that under weak spin–orbit interaction, a band inversion occurs. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Observation of a linked-loop quantum state in a topological magnet

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state1–13. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids5, magnets6,7, the quantum Hall effect3,8, topological insulators9,10, Weyl semimetals11–13 and other phenomena. Here we report an unusual linking-number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet14–20. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material’s three-torus, T3, bulk Brillouin zone. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked-loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits the linking number (2, 2, 2), providing a direct determination of the invariant structure from the experimental data. We further predict and observe, on the surface of our samples, Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk–boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of magnetic and superconducting quantum matter