Uniparabolic mirror grading for vertical cavity surface emitting lasers

Includes bibliographical references (page 607).We report details of mirror grading profiles for high efficiency vertical cavity surface emitting lasers. The mirrors provide low vertical resistance in conjunction with improvements in optical reflectivity, thermal conductivity, and lateral electrical conductivity in comparison to earlier grading profiles. The enhancement of these properties is verified by a comparison of thermal resistance and total electrical resistance for lasers of varying size.This work was supported by the United States Department of Energy under Contract No. DE-AC04-94AL85000

Far-Ultraviolet Activity Levels of F, G, K, and M dwarf Exoplanet Host Stars

We present a survey of far-ultraviolet (FUV; 1150 - 1450 Ang) emission line spectra from 71 planet-hosting and 33 non-planet-hosting F, G, K, and M dwarfs with the goals of characterizing their range of FUV activity levels, calibrating the FUV activity level to the 90 - 360 Ang extreme-ultraviolet (EUV) stellar flux, and investigating the potential for FUV emission lines to probe star-planet interactions (SPIs). We build this emission line sample from a combination of new and archival observations with the Hubble Space Telescope-COS and -STIS instruments, targeting the chromospheric and transition region emission lines of Si III, N V, C II, and Si IV. We find that the exoplanet host stars, on average, display factors of 5 - 10 lower UV activity levels compared with the non-planet hosting sample; this is explained by a combination of observational and astrophysical biases in the selection of stars for radial-velocity planet searches. We demonstrate that UV activity-rotation relation in the full F - M star sample is characterized by a power-law decline (with index $\alpha$ ~ -1.1), starting at rotation periods >~3.5 days. Using N V or Si IV spectra and a knowledge of the star's bolometric flux, we present a new analytic relationship to estimate the intrinsic stellar EUV irradiance in the 90 - 360 Ang band with an accuracy of roughly a factor of ~2. Finally, we study the correlation between SPI strength and UV activity in the context of a principal component analysis that controls for the sample biases. We find that SPIs are not a statistically significant contributor to the observed UV activity levels.Comment: ApJS, accepted. 33 pages in emulateapj, 13 figures, 10 table

Genetic Attributions: Sign of Intolerance or Acceptance?

Many scholars argue that people who attribute human characteristics to genetic causes also tend to hold politically and socially problematic attitudes. More specifically, public acceptance of genetic influences is believed to be associated with intolerance, prejudice, and the legitimation of social inequities and laissez-faire policies. We test these expectations with original data from two nationally representative samples that allow us to identify the American public’s attributional patterns across 18 diverse traits. Key findings are (1) genetic attributions are actually more likely to be made by liberals, not conservatives; (2) genetic attributions are associated with higher, not lower, levels of tolerance of vulnerable individuals; and (3) genetic attributions do not correlate with unseemly racial attitudes

Different mirror, A

Includes bibliographical references.Mirrors grown in the crystalline structure ease manufacture of vertical-cavity lasers, which emit collimated circular beams and can form large two-dimensional arrays. The authors discuss the fabrication of the surface emitting laser mirrors. By means of techniques such as molecular beam epitaxy and metal-organic vapor phase epitaxy, hundreds of layers of semiconductor materials can be grown one on top of the other. By mixing and matching the materials to create "designer" alloys, it is possible to grow a crystalline structure with all the electrical and optical properties desired for its various parts. This method of tailoring semiconductor structures is called bandgap engineering. The principles of the mirrors and their applications are discussed.This work was sponsored by the U.S. Department of Energy under contract number DE-AC04-94AL85000

The Stripe 82 Massive Galaxy Project II: Stellar Mass Completeness of Spectroscopic Galaxy Samples from the Baryon Oscillation Spectroscopic Survey

The Baryon Oscillation Spectroscopic Survey (BOSS) has collected spectra for over one million galaxies at $0.15<z<0.7$ over a volume of 15.3 Gpc$^3$ (9,376 deg$^2$) -- providing us an opportunity to study the most massive galaxy populations with vanishing sample variance. However, BOSS samples are selected via complex color cuts that are optimized for cosmology studies, not galaxy science. In this paper, we supplement BOSS samples with photometric redshifts from the Stripe 82 Massive Galaxy Catalog and measure the total galaxy stellar mass function (SMF) at $z\sim0.3$ and $z\sim0.55$. With the total SMF in hand, we characterize the stellar mass completeness of BOSS samples. The high-redshift CMASS ("constant mass") sample is significantly impacted by mass incompleteness and is 80% complete at $\log_{10}(M_*/M_{\odot}) >11.6$ only in the narrow redshift range $z=[0.51,0.61]$. The low redshift LOWZ sample is 80% complete at $\log_{10}(M_*/M_{\odot}) >11.6$ for $z=[0.15,0.43]$. To construct mass complete samples at lower masses, spectroscopic samples need to be significantly supplemented by photometric redshifts. This work will enable future studies to better utilize the BOSS samples for galaxy-formation science.Comment: 18 pages, 17 figures, 5 table

Probing UV-sensitive Pathways for CN and HCN Formation in Protoplanetary Disks with the Hubble Space Telescope

The UV radiation field is a critical regulator of gas-phase chemistry in surface layers of disks around young stars. In an effort to understand the relationship between photocatalyzing UV radiation fields and gas emission observed at infrared and submillimeter wavelengths, we present an analysis of new and archival Hubble Space Telescope (HST), Spitzer, ALMA, IRAM, and SMA data for five targets in the Lupus cloud complex and 14 systems in Taurus-Auriga. The HST spectra were used to measure Lyα and far-UV (FUV) continuum fluxes reaching the disk surface, which are responsible for dissociating relevant molecular species (e.g., HCN, N₂). Semi-forbidden C II] λ2325 and UV-fluorescent H₂ emission were also measured to constrain inner disk populations of C⁺ and vibrationally excited H2. We find a significant positive correlation between 14 μm HCN emission and fluxes from the FUV continuum and C II] λ2325, consistent with model predictions requiring N₂ photodissociation and carbon ionization to trigger the main CN/HCN formation pathways. We also report significant negative correlations between submillimeter CN emission and both C II] and FUV continuum fluxes, implying that CN is also more readily dissociated in disks with stronger FUV irradiation. No clear relationships are detected between either CN or HCN and Lyα or UV-H₂ emission. This is attributed to the spatial stratification of the various molecular species, which span several vertical layers and radii across the inner and outer disk. We expect that future observations with the James Webb Space Telescope will build on this work by enabling more sensitive IR surveys than were possible with Spitzer

Gain-dependent polarization properties of vertical-cavity lasers

Includes bibliographical references.We show that the partitioning of power into the two orthogonal eigen polarizations of infra-red gain-guided vertical-cavity lasers depends upon the relative spectral overlap of the nondegenerate polarization cavity resonances with the laser gain spectrum. Furthermore, at the condition where the polarization resonances and the peak laser gain are aligned, abrupt switching of power between the eigen polarizations is observed as the gain sweeps through the polarization resonances. The gain-dependence of the polarization requires spectral splitting between the eigen polarizations, which is found to be strongly influenced by local strain. The polarization of the fundamental and higher-order spatial modes can be selected and maintained for all InGaAs vertical-cavity lasers in a wafer simply by employing a 20 nm or greater blue-shift offset of the peak laser gain relative to the cavity resonances.The work performed at Sandia National Laboratories is supported by the U. S. Department of Energy under contract No. DE-AC04-94AL85000

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670-690-nm vertical-cavity surface-emitting lasers

Includes bibliographical references.We report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, we demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 °C from a 15-μm-diameter device.This letter was supported by the US Department of Energy under contract no. DE-AC04-94AL85000

Index guiding dependent effects in implant and oxide confined vertical-cavity lasers

Includes bibliographical references.Implant and oxide confined vertical-cavity surface-emitting lasers are compared in terms of properties dependent upon the nature of index guiding in the two structures including CW threshold current scaling with size, light-current linearity, pulsed operation delay, and beam profiles. The oxide confined lasers, fabricated by wet thermal oxidation, have a built-in index guide and thus exhibit substantially better properties than do lasers from the same wafer fabricated by proton implantation which rely on a thermal lens to reduce diffraction losses.This work was supported by the U.S. Department of Energy under Contract DEAC04-94AL85000