8,576 research outputs found

    On the effect of nano-injectors on conduction in silicon p-i-n diodes

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    P–i–n diodes are widely used in power electronics [1-2], solar cells [3], light detection [4] and also light generation [5]. Contrary to the case of light detection or conversion, light generation is usually achieved by biasing the device in forward mode, in a condition of carrier injection. Depending on its level, the device can operate in regimes controlled by respectively generation/recombination current, diffusion current or the so called series resistance [6]. The injection level also controls the balance between the recombination mechanisms, and it is commonly controlled via the applied bias, which could be fixed by the specific application rather then being a free parameter. A possible approach to better control the injection level is to modify the features of the carrier injectors, for instance by thinning down the junction area [7] or reducing the injectors itself to a nanometer scale [8]. A practical way to realize nano-injectors is to embed the intrinsic region in oxide and create the connection between the intrinsic region and the two extension regions via antifuses, as realized in [9]. The size and properties of the antifuses can be controlled electrically, making it suitable to analyze the effects of progressive scaling of the dimensions of carrier injectors. In this work, we compare electrical behaviors of a standard p-i-n diode with antifuse p-i-n diodes programmed at different conditions. Electrical I-V measurements are performed at temperatures between -20 and 200 °C (I-V-T characteristics) in order to investigate the dominant mechanisms in the conduction

    Locally most powerful sequential tests of a simple hypothesis vs one-sided alternatives

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    Let X1,X2,...X_1,X_2,... be a discrete-time stochastic process with a distribution PθP_\theta, θ∈Θ\theta\in\Theta, where Θ\Theta is an open subset of the real line. We consider the problem of testing a simple hypothesis H0:H_0: θ=θ0\theta=\theta_0 versus a composite alternative H1:H_1: θ>θ0\theta>\theta_0, where θ0∈Θ\theta_0\in\Theta is some fixed point. The main goal of this article is to characterize the structure of locally most powerful sequential tests in this problem. For any sequential test (ψ,ϕ)(\psi,\phi) with a (randomized) stopping rule ψ\psi and a (randomized) decision rule ϕ\phi let α(ψ,ϕ)\alpha(\psi,\phi) be the type I error probability, β˙0(ψ,ϕ)\dot \beta_0(\psi,\phi) the derivative, at θ=θ0\theta=\theta_0, of the power function, and N(ψ)\mathscr N(\psi) an average sample number of the test (ψ,ϕ)(\psi,\phi). Then we are concerned with the problem of maximizing β˙0(ψ,ϕ)\dot \beta_0(\psi,\phi) in the class of all sequential tests such that α(ψ,ϕ)≤αandN(ψ)≤N, \alpha(\psi,\phi)\leq \alpha\quad{and}\quad \mathscr N(\psi)\leq \mathscr N, where α∈[0,1]\alpha\in[0,1] and N≥1\mathscr N\geq 1 are some restrictions. It is supposed that N(ψ)\mathscr N(\psi) is calculated under some fixed (not necessarily coinciding with one of PθP_\theta) distribution of the process X1,X2...X_1,X_2.... The structure of optimal sequential tests is characterized.Comment: 30 page

    A Modeling approach for analysis and improvement of spindle-holder-tool assembly dynamics

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    The most important information required for chatter stability analysis is the dynamics of the involved structures, i.e. the frequency response functions (FRFs) which are usually determined experimentally. In this study, the tool point FRF of a spindle-holder-tool assembly is analytically determined by using the receptance coupling and structural modification techniques. Timoshenko’s beam model is used for increased accuracy. The spindle is also modeled analytically with elastic supports representing the bearings. The mathematical model is used to determine the effects of different parameters on the tool point FRF and to identify contact dynamics from experimental measurements. The applications of the model are demonstrated and the predictions are verified experimentally

    Letter from Taiwan

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    Sinnesstille : zur Naturlyrik des "vorkritischen" Goethe ; Vortrag m. Multimedia-Präsentation 26.3.2006, Universität Kyoto

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    Der Begründer der Neuen Phänomenologie, Hermann Schmitz, rückt anläßlich einer Erläuterung des für ihn zentralen Begriffs der "implantierenden Situation" Goethes Gedicht Über allen Gipfeln ist Ruh ... in die Nähe der Haiku-Lyrik. Das von Schmitz nur beiläufig Konstellierte erweist sich bei näherem Hinsehen als aufschlußreich für das Verständnis der Naturlyrik aus Goethes erstem Weimarer Jahrzehnt. Denn es ist in der Tat die Haiku-Tradition, an der wir unseren Blick für manche Eigenheiten der lyrischen Sprache Goethes in jener Werkphase schulen können – einer Werkphase, die ich als "vorkritisch" bezeichne, da sie noch nicht unter dem Einfluß der kritischen Philosophie Kants steht und daher noch frei ist vom didaktisierenden Zug transzendentaler Subjektivität. Der japanische Blick auf den "vorkritischen" Goethe ist nicht nur von philologischem Interesse. Er zeigt uns, sehr viel weiter reichend, die Möglichkeit eines Sprechens über Phänomene, bei dem es kein die Erfahrung begleitendes und in seine Gewalt bringendes "Ich denke" zu geben scheint. ..
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