88 research outputs found

    Topological Hall effect in thin films of Mn1.5_{1.5}PtSn

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    Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn1.5_{1.5}PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to μ0H≈4 \mu_{0}H \approx 4~T below the spin reorientation transition temperature, Ts=185T_{s}=185~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between 0.76 μΩ0.76~\mu\Omegacm and 1.55 μΩ1.55~\mu\Omegacm at 150~K.Comment: 6 pages, 5 figure

    Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures

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    We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by 90{\deg} and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field-dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic field induced modifications of the domain structure in antiferromagnets. With this generic model we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials

    Time-dependent multistate switching of topological antiferromagnetic order in Mn3_3Sn

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    The manipulation of antiferromagnetic order by means of spin-orbit torques opens unprecedented opportunities to exploit the dynamics of antiferromagnets in spintronic devices. In this work, we investigate the current-induced switching of the magnetic octupole vector in the Weyl antiferromagnet Mn3_3Sn as a function of pulse shape, field, temperature, and time. We find that the switching behavior can be either bistable or tristable depending on the temporal structure of the current pulses. Time-resolved Hall effect measurements reveal that Mn3_3Sn switching proceeds via a two-step demagnetization-remagnetization process caused by self-heating over a timescale of tens of ns followed by cooling in the presence of spin-orbit torques. Our results shed light on the switching dynamics of Mn3_3Sn and prove the existence of extrinsic limits on its switching speed.Comment: Rectified wrong order of MS and Supplemen

    Local and nonlocal spin Seebeck effect in lateral Pt-Cr2O3\mathrm{Cr_2O_3}-Pt devices at low temperatures

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    We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic α\alpha-Cr2O3\mathrm{Cr_2O_3} and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our α\alpha-Cr2O3\mathrm{Cr_2O_3} films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport.Comment: Accepted in APL Materials, For Supplementary Material see published versio

    Control of nonlocal magnon spin transport via magnon drift currents

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    Spin transport via magnon diffusion in magnetic insulators is important for a broad range of spin-based phenomena and devices. However, the absence of the magnon equivalent of an electric force is a bottleneck. In this work, we demonstrate the controlled generation of magnon drift currents in yttrium iron garnet/platinum heterostructures. By performing electrical injection and detection of incoherent magnons, we find magnon drift currents that stem from the interfacial Dzyaloshinskii-Moriya interaction. We can further control the magnon drift by the orientation of the magnetic field. The drift current changes the magnon propagation length by up to ±\pm 6 % relative to diffusion. We generalize the magnonic spin transport theory to include a finite drift velocity resulting from any inversion asymmetric interaction, and obtain results consistent with our experiments.Comment: 6 pages, 3 figure
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