Spectrum simulation of rough and nanostructured targets from their 2D and 3D image by Monte Carlo methods

Corteo is a program that implements Monte Carlo (MC) method to simulate ion beam analysis (IBA) spectra of several techniques by following the ions trajectory until a sufficiently large fraction of them reach the detector to generate a spectrum. Hence, it fully accounts for effects such as multiple scattering (MS). Here, a version of Corteo is presented where the target can be a 2D or 3D image. This image can be derived from micrographs where the different compounds are identified, therefore bringing extra information into the solution of an IBA spectrum, and potentially significantly constraining the solution. The image intrinsically includes many details such as the actual surface or interfacial roughness, or actual nanostructures shape and distribution. This can for example lead to the unambiguous identification of structures stoichiometry in a layer, or at least to better constraints on their composition. Because MC computes in details the trajectory of the ions, it simulates accurately many of its aspects such as ions coming back into the target after leaving it (re-entry), as well as going through a variety of nanostructures shapes and orientations. We show how, for example, as the ions angle of incidence becomes shallower than the inclination distribution of a rough surface, this process tends to make the effective roughness smaller in a comparable 1D simulation (i.e. narrower thickness distribution in a comparable slab simulation). Also, in ordered nanostructures, target re-entry can lead to replications of a peak in a spectrum. In addition, bitmap description of the target can be used to simulate depth profiles such as those resulting from ion implantation, diffusion, and intermixing. Other improvements to Corteo include the possibility to interpolate the cross-section in angle-energy tables, and the generation of energy-depth maps.CRSNG, FRQ-N

Evolution of the potential-energy surface of amorphous silicon

The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distribution, calculated from the final state, is independent of the relaxation, following a different function. Moreover, the resulting gained or released energy distribution is a simple convolution of these two distributions indicating that the activation and relaxation parts of a the elementary relaxation mechanism are completely independent. This characterized energy landscape can be used to explain nano-calorimetry measurements.Comment: 5 pages, 4 figure

Computer Simulation of Ion Beam Analysis: Possibilities and Limitations

Quantitative application of ion beam analysis methods, such as Rutherford backscat- tering, elastic recoil detection analysis, and nuclear reaction analysis, requires the use of computer simulation codes. The different types of available codes are pre- sented, and their advantages and weaknesses with respect to underlying physics and computing time requirements are discussed. Differences between different codes of the same type are smaller by about one order of magnitude than the uncertainty of basic input data, especially stopping power and cross section data. Even very com- plex sample structures with elemental concentration variations with depth or lat- erally varying structures can be simulated quantitatively. Laterally inhomogeneous samples generally result in an ambiguity with depth profiles. The optimization of ion beam analysis measurements is discussed, and available tools are presented

Use of GNSS and ERA5 precipitable water vapor based standardized precipitation conversion index for drought monitoring in the Mediterranean coast:A first case study in Southern Spain

In this paper the Standardized Precipitation Conversion Index (SPCI), a PWV-based drought index, has been computed using GNSS and ERA5 PWV and its performance has been tested with respect to the Standardized Precipitation Evapotranspiration Index (SPEI) in Southern Spain. One of the climatic features of this area is the low correlation level between PWV and precipitation, in contrast with other areas in which SPCI has been previously tested. The GNSS-SPCI has been derived from validated ZTD time series estimated from local GNSS permanent stations’ data. All the needed meteorological values were derived from ERA5, excepting precipitation values and SPEI-SPI values which were extracted from a national high-resolution dataset.The resulting SPCI time series have shown high correlation coefficients with respect to the SPEI. The use of longer SPCI time series allowed by ERA5 model has provided the most coherent results, suggesting that the ERA5-PWV data can be interesting to overcome problems caused by the short timespan of GNSS time series in SPCI computation. In general, high correlation coefficients have been obtained compared to global results from previous studies. This shows that, even for regions with low correlation levels between PWV and precipitation, the SPCI can have an interesting potential for drought monitoring. The SPCI was found to perform better on higher timescales (12 and 24 months). The performance of SPCI has also been compared that of the SPI: SPCI is able to outperform SPI for the 24-month timescale for a limited geographical region. This supports that the inclusion of PWV data in drought monitoring indices could be promising and is worth keeping to be investigated

Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation

Hydrogen imaging with sub-μm lateral resolution and sub-ppm sensitivity has become possible with coincident proton–proton (pp) scattering analysis (Reichart et al., 2004). Depth information is evaluated from the energy sum signal with respect to energy loss of both protons on their path through the sample. In first order, there is no angular dependence due to elastic scattering. In second order, a path length effect due to different energy loss on the paths of the protons causes an angular dependence of the energy sum. Therefore, the energy sum signal has to be de-convoluted depending on the matrix composition, i.e. mainly the atomic number Z, in order to get a depth calibrated hydrogen profile. Although the path effect can be calculated analytically in first order, multiple scattering effects lead to significant deviations in the depth profile. Hence, in our new approach, we use the CORTEO Monte-Carlo code (Schiettekatte, 2008) in order to calculate the depth of a coincidence event depending on the scattering angle. The code takes individual detector geometry into account. In this paper we show, that the code correctly reproduces measured pp-scattering energy spectra with roughness effects considered. With more than 100 μm thick Mylar-sandwich targets (Si, Fe, Ge) we demonstrate the deconvolution of the energy spectra on our current multistrip detector at the microprobe SNAKE at the Munich tandem accelerator lab. As a result, hydrogen profiles can be evaluated with an accuracy in depth of about 1% of the sample thickness

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs with nominal doping level p=7×1018cm−3p=7×1018cm−3. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450°C450°C, or after ion implantations carried out at energies of 40keV40keV with P+P+, and at 90 and 170keV170keV with As+As+. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from AsAs desorption is clearly observed in samples submitted to RVTA above 300°C300°C, and the depletion layer depths measured in ion implanted GaAs:ZnGaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45°45° during implantation, are also investigated. These results show that the Raman spectroscopy is a versatile tool to study the defects induced by postgrowth processes in multilayered heterostructures, with probing range of about 100nm100nm in GaAsGaAs-based materials

Practising reflexivity in international law : introducing a concept and the working paper series

The field of international law is increasingly turning upon itself. For instance, there is heightened attention to its histories, to the background of the field's actors, or to the structure of international legal argument. This introduction to the concept and practice of reflexivity uses reflexivity to connect and explain these different strands of scholarship in international law. It suggests, in sum, that the field of international law is becoming more reflexive. To substantiate this view, this introduction defines the concept of reflexivity and identifies three levels of reflexive practice in the field. These levels involve turning upon (1) one’s own personal and professional situation or that of the international lawyer; (2) the situation of the field of international law; and (3) the scholarly endeavor in international law. After having situated the concept and practice of reflexivity in international legal scholarship, this introduction extracts some of the implications of its practice and highlights both its benefits and potential pitfalls. It concludes by noting that a reflexive practice may serve as a tool for international lawyers to cultivate an awareness of the contexts and constraints of the field in which they operate, and their position within it

Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (1015 cm−2). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related to damage accumulation and recovery mechanisms, have important implications for the realization ion-implanted resistive layers that can be triggered with near infrared laser pulses and suitable for ultrafast optoelectronics

Global groundwater droughts are more severe than they appear in hydrological models:an investigation through a Bayesian merging of GRACE and GRACE-FO data with a water balance model

Realistic representation of hydrological drought events is increasingly important in world facing decreased freshwater availability. Index-based drought monitoring systems are often adopted to represent the evolution and distribution of hydrological droughts, which mainly rely on hydrological model simulations to compute these indices. Recent studies, however, indicate that model derived water storage estimates might have difficulties in adequately representing reality. Here, a novel Markov Chain Monte Carlo - Data Assimilation (MCMC-DA) approach is implemented to merge global Terrestrial Water Storage (TWS) changes from the Gravity Recovery And Climate Experiment (GRACE) and its Follow On mission (GRACE-FO) with the water storage estimations derived from the W3RA water balance model. The modified MCMC-DA derived summation of deep-rooted soil and groundwater storage estimates is then used to compute standardized groundwater drought indices globally to show the impact of GRACE/GRACE-FO DA on a global index-based hydrological drought monitoring system. Our numerical assessment covers the period of 2003–2021, and shows that integrating GRACE/GRACE-FO data modifies the seasonality and inter-annual trends of water storage estimations. Considerable increases in the length and severity of extreme droughts are found in basins that exhibited multi-year water storage fluctuations and those affected by climate teleconnections

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy measurements show that the structural and morphological properties of the Zr-implanted AlN films depend on the annealing gaseous environment. Post-implantation annealing under argon atmosphere yields the lowest structured surface roughness with increased grain size. Photoluminescence spectroscopy revealed multiple point defects and defect complexes related emission bands in the visible range. A series of absorption bands have been observed using photoluminescence excitation spectroscopy. The origin of the emission or absorption bands is identified and attributed to various types of point defects and defect complexes, theoretically reported for AlN. New emission and absorption peaks at 1.7eV (730nm) and 2.6eV (466nm), respectively, have been identified and attributed to the (ZrAl–VN)0 defect complexes