Untersuchungen zur Reaktivität von MetHb-Untereinheiten

AbstractThe kinetics of methaemoglobin substitution reactions have been investigated by the stopped-flow technique. Biphasic reactions have been observed with adult and fetal methaemoglobin. This behaviour is attributed to different reactivities of the chain types. The investigations give evidence of an increasing chain reactivity in the sequence α-chain < β-chain < γ-chain. The differences increase with the size of the substituting ligand, indicating steric effects

Dder einfluss von liganden auf den assoziationsgrad des desoxy-hämoglobins der flussneunaugen (lampetra fluviatilis L.)

AbstractIn alkaline aqueous solution, the sedimentation coefficients of DeoxyHb, HbO2 and HbCO of Lampetra fluviatilis L. are 1.9 ± 0.1 S. This value corresponds to a molecular weight of about 17,000, i.e. the value of a single haem polypeptide chain. In weak acidic conditions, both the non-liganded DeoxyHb and the liganded forms, HbO2 and HbCO, associate to form dimers and oligomers. The monomer-oligomer transitions of these compounds take place at different pH values: DeoxyHb pHO.5 ∼ 6.7; HbO2 and HbCO pHO.5 ∼ 5.9. With respect to the association modus, the equilibrium: 4 Hb ⇌ 2 Hb2⇌Hb4 may be preferred

Learning intrinsic excitability in medium spiny neurons

We present an unsupervised, local activation-dependent learning rule for intrinsic plasticity (IP) which affects the composition of ion channel conductances for single neurons in a use-dependent way. We use a single-compartment conductance-based model for medium spiny striatal neurons in order to show the effects of parametrization of individual ion channels on the neuronal activation function. We show that parameter changes within the physiological ranges are sufficient to create an ensemble of neurons with significantly different activation functions. We emphasize that the effects of intrinsic neuronal variability on spiking behavior require a distributed mode of synaptic input and can be eliminated by strongly correlated input. We show how variability and adaptivity in ion channel conductances can be utilized to store patterns without an additional contribution by synaptic plasticity (SP). The adaptation of the spike response may result in either "positive" or "negative" pattern learning. However, read-out of stored information depends on a distributed pattern of synaptic activity to let intrinsic variability determine spike response. We briefly discuss the implications of this conditional memory on learning and addiction.Comment: 20 pages, 8 figure

Splitting of Folded Strings in AdS_4*CP^3

We study classically splitting of two kinds of folded string solutions in AdS_4*CP^3. Conserved charges of the produced fragments are computed for each case. We find interesting patterns among these conserved charges.Comment: minor changes, 14 pages, no figure

The Phenomenology of Mentality

peer reviewedThis paper offers a phenomenological interpretation of Brentano’s view of mentality. The key idea is that mental phenomena are not only characterized by intentionality; they also exhibit a distinctive way of appearing or being experienced. In short, they also have a distinctive phenomenology. I argue this view may be traced back to Brentano’s theory of inner perception (hereafter IP). Challenging the self-representational reading of IP, I maintain the latter is best understood as a way of appearing, that is, in phenomenological terms. Section 1 addresses Brentano’s claim that IP is one mark of the mental alongside intentionality. Sections 2 and 3 present support for a phenomenological interpretation of IP. And Section 4 briefly discusses two objections.The Phenomenology of Mentality (F.R.S.-FNRS Research Project / PDR

Natural CD4+ T-Cell Responses against Indoleamine 2,3-Dioxygenase

The enzyme indoleamine 2,3-dioxygenase (IDO) contributes to immune tolerance in a variety of settings. In cancer IDO is expressed within the tumor itself as well as in antigen-presenting cells in tumor-draining lymph nodes, where it endorses the establishment of peripheral immune tolerance to tumor antigens. Recently, we described cytotoxic CD8(+) T-cell reactivity towards IDO-derived peptides.In the present study, we show that CD4(+) helper T cells additionally spontaneously recognize IDO. Hence, we scrutinized the vicinity of the previously described HLA-A*0201-restricted IDO-epitope for CD4(+) T-cell epitopes. We demonstrated the presence of naturally occurring IDO-specific CD4(+) T cells in cancer patients and to a lesser extent in healthy donors by cytokine release ELISPOT. IDO-reactive CD4(+) T cells released IFN-γ, TNF-α, as well as IL-17. We confirm HLA class II-restriction by the addition of HLA class II specific blocking antibodies. In addition, we detected a trend between class I- and class II-restricted IDO responses and detected an association between IDO-specific CD4(+) T cells and CD8(+) CMV-responses. Finally, we could detect IL-10 releasing IDO-reactive CD4(+) T cells.IDO is spontaneously recognized by HLA class II-restricted, CD4(+) T cells in cancer patients and in healthy individuals. IDO-specific T cells may participate in immune-regulatory networks where the activation of pro-inflammatory IDO-specific CD4(+) responses may well overcome or delay the immune suppressive actions of the IDO-protein, which are otherwise a consequence of the early expression of IDO in maturing antigen presenting cells. In contrast, IDO-specific regulatory T cells may enhance IDO-mediated immune suppression

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor