586 research outputs found

    Fast optimal transition between two equilibrium states

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    We demonstrate a technique based on invariants of motion for a time-dependent Hamiltonian, allowing a fast transition to a final state identical in theory to that obtained through a perfectly adiabatic transformation. This method is experimentally applied to the fast decompression of an ultracold cloud of Rubidium 87 atoms held in a harmonic magnetic trap, in the presence of gravity. We are able to decompress the trap by a factor of 15 within 35 ms with a strong suppression of the sloshing and breathing modes induced by the large vertical displacement and curvature reduction of the trap. When compared to a standard linear decompression, we achieve a gain of a factor of 37 on the transition time.Comment: 5 pages, 4 figures, an error in Eq. (2) has been correcte

    Origin of the n-type conductivity of InN: the role of positively charged dislocations

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    As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration

    Optimally robust shortcuts to population inversion in two-level quantum systems

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    We examine the stability versus different types of perturbations of recently proposed shortcuts-to-adiabaticity to speed up the population inversion of a two-level quantum system. We find optimally robust processes using invariant based engineering of the Hamiltonian. Amplitude noise and systematic errors require different optimal protocols.Comment: 17 pages, 7 figure

    Zero-minimum tillage seeding and fertilizer placement techniques for zero-tillage

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    Non-Peer ReviewedPreliminary results from the field evaluation of zero and minimum tillage seeding machines, as well as fertilizer placement techniques for zero-tillage are presented. Narrow hoe opener (Noble 2000), conventional double-disc (Haybuster 1206), as well as two modified double-disc press drills have been compared for their seeding performance and effects on crop yields in a continuous zero-till wheat test. Further, an air-seeder, a discer and a conventional hoe press-drill have been field evaluated both on cultivated fallow and stubble situations. Deep banding and side banding (approximately 2.5 cm from seed) of fertilizer using both disc and hoe press-drills have been compared to seed-placed fertilizer application

    Valence band offset of InN/AlN heterojunctions measured by X-ray photoelectron spectroscopy

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    The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52±0.17 eV. Together with the resulting conduction band offset of 4.0±0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement

    Surface electronic properties of undoped InAlN alloys

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    The variation in surface electronic properties of undoped c-plane InxAl1−xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed

    Radiography of a normal fault system by 64,000 high-precision earthquake locations: The 2009 L’Aquila (central Italy) case study

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    We studied the anatomy of the fault system where the 2009 L’Aquila earthquake (MW 6.1) nucleated by means of ~64 k high-precision earthquake locations spanning 1 year. Data were analyzed by combining an automatic picking procedure for P and S waves, together with cross-correlation and double-difference location methods reaching a completeness magnitude for the catalogue equal to 0.7 including 425 clusters of similar earthquakes. The fault system is composed by two major faults: the high-angle L’Aquila fault and the listric Campotosto fault, both located in the first 10 km of the upper crust. We detect an extraordinary degree of detail in the anatomy of the single fault segments resembling the degree of complexity observed by field geologists on fault outcrops. We observe multiple antithetic and synthetic fault segments tens of meters long in both the hanging wall and footwall along with bends and cross fault intersections along the main fault and fault splays. The width of the L’Aquila fault zone varies along strike from 0.3 km where the fault exhibits the simplest geometry and experienced peaks in the slip distribution, up to 1.5 km at the fault tips with an increase in the geometrical complexity. These characteristics, similar to damage zone properties of natural faults, underline the key role of aftershocks in fault growth and co-seismic rupture propagation processes. Additionally, we interpret the persistent nucleation of similar events at the seismicity cutoff depth as the presence of a rheological (i.e., creeping) discontinuity explaining how normal faults detach at depth

    Transition from electron accumulation to depletion at InGaN surfaces

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    The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1−xN films (0<=x<=1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level

    New coherent detector for terahertz radiation based on excitonic electroabsorption

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    We demonstrate a new technique for the coherent measurement of free‐space THz electrical transients, based on the parallel‐field excitonic electroabsorption effect in GaAs quantum wells. A THz transient generated from a photoconductive dipole antenna is measured with a rise time of 290 fs and a full width at half maximum of 360 fs. The initial rise of the THz wave form is abrupt, and does not display the exponential leading edge apparent in waveforms measured with photoconductive techniques. The detector sensitivity is sub‐100 mV/cm.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70714/2/APPLAB-61-15-1763-1.pd
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