Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts

We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $k\Omega$ at 300 $K$. The yield of device resistances below 100 $k\Omega$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.Comment: submitted to APL version without figures version with figures available on http://www.unibas.ch/phys-meso

Finite bias Cooper pair splitting

In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally investigate the effect of a finite potential difference across one quantum dot on the conductance through the other completely grounded QD in a Cooper pair splitter fabricated on an InAs nanowire. We demonstrate that the electrical transport through the device can be tuned by electrical means to be dominated either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The basic experimental findings can be understood by considering the energy dependent density of states in a QD. The reported experiments add bias-dependent spectroscopy to the investigative tools necessary to develop CPS-based sources of entangled electrons in solid-state devices.Comment: 4 pages, 4 figure

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only few techniques were developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.Comment: 9 pages, 5 figure

Contact-less characterizations of encapsulated graphene p-n junctions

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.Comment: 4 figures, supplementary information on reques

Wideband and on-chip excitation for dynamical spin injection into graphene

Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.Comment: 7 pages, 4 figure

Large oscillating non-local voltage in multi-terminal single wall carbon nanotube devices

We report on the observation of a non-local voltage in a ballistic one-dimensional conductor, realized by a single-wall carbon nanotube with four contacts. The contacts divide the tube into three quantum dots which we control by the back-gate voltage $V_g$. We measure a large \emph{oscillating} non-local voltage $V_{nl}$ as a function of $V_g$ with zero mean. Though a classical resistor model can account for a non-local voltage including change of sign, it fails to describe the magnitude properly. The large amplitude of $V_{nl}$ is due to quantum interference effects and can be understood within the scattering-approach of electron transport

Multi-wall carbon nanotubes as quantum dots

We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random conductance fluctuations (UCF) in long MWNT devices (L=2...7 $\mu m$), while Coulomb blockade and energy level quantization are observed in short ones (L=300 nm). The electron levels of short MWNT dots are nearly four-fold degenerate (including spin) and their evolution in magnetic field (Zeeman splitting) agrees with a g-factor of 2. In zero magnetic field the sequential filling of states evolves with spin S according to S=0 -> 1/2 -> 0... In addition, a Kondo enhancement of the conductance is observed when the number of electrons on the tube is odd.Comment: 10 pages, 4 figure

Local electrical tuning of the nonlocal signals in a Cooper pair splitter

A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.Comment: 9 pages, 6 figures, 2 table

Resonant tunneling through a C60 molecular junction in liquid environment

We present electronic transport measurements through thiolated C$_{60}$ molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C$_{60}$-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by the environment of the junction as shown by measurements in two distinct solvents. In the framework of a simple resonant tunneling model, we can extract the electronic tunneling rates governing the transport properties of the junctions.Comment: 13 pages, 4 figures. To appear in Nanotechnolog