26 research outputs found

    From Suburban to Urban Villages: A Case Study of an Indian Village in the National Capital Region <Article>

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    本稿では,グローバル化の下で経済成長しているデリー首都圏内の近郊農村の社会変容の過程を分析した。1997年にノイダの1 農村において全世帯を対象に調査を行い,2014年・2015年にはその追跡調査を行った。ノイダの開発にともない,政府により多くの農地が収用され,農業が衰退した。住民は離農し,大都市や工場への通勤者が増加し,農業を基盤とした社会関係は崩壊した。公立学校が主体であった住民の通学先は,所得向上にともない,私立学校中心となった。地域社会がかつて共有していた価値は意義を失うこととなった。集落外は都市景観になるものの,都市計画外地域として集落形態が残存している。伝統的な農家住宅は近代的なものに建て替えられ,集落内にも賃貸アパートが林立するものの,インフラは未整備のままで,下水道などに問題が生じているが,行政の努力不足や集落内で解決する主体が存在しない状況が続いている。調査村は,大都市圏の都市計画から排除された低開発地区であり,アーバンビレッジと化した。ここは,近隣の大学の学生や都市で働く低賃金労働者などのための低家賃アパートの供給地となっている。アーバンビレッジは,より発展した都市空間へ送り出すための労働力の(再)生産において重要な役割を果たしている。This paper examines social change in a suburban village in the National Capital Region of India, following rapid development as a result of globalization. The authors conducted household surveys in a village (“Village R”) of Noida, which is part of the National Capital Region, in 1997 and 2014. With the development of Noida, the state government acquired vast land tracts in the village, mostly in the early 2000s. While agriculture declined between 1997 and 2014, the number of workers in offices or factories in/near the cities increased; consequently, social relations based on agriculture almost completely collapsed. With their increasing incomes, more people began sending their children to private schools rather than government schools. The local social systems and values that the residents once shared became irrelevant. Furthermore, the village became externally surrounded by modern urban landscape, and multi-story houses steadily replaced the original rural houses and farmland in the village. However, village infrastructure has not improved much owing to the lack of administrative effort, which has resulted in the deterioration of the living environment, including drainage.“ Village R,” which can be considered an urban village, has remained underdeveloped and excluded from the urban planning of the megacity. Nevertheless, the village provides cheap accommodations for local university students and the local industrial workers. Thus, the urban village plays an important role in (re-) producing the labor force for more-developed urban areas.本研究は,平成27~29年度科研費(基盤研究A)「現代インドの経済空間構造とその形成メカニズム」(代表者:友澤和夫,課題番号26257012)による研究成果の一部である。また,成果の一部は「デリー首都圏内農村の宅地化と社会変動- UP州ノイダの1農村の追跡研究」(2015年度HINDAS 第3回研究集会,2015年8月)にて口頭発表したものである

    Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

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    We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1−δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory

    Lifestyle Pathways Affecting Children’s Mental Health in Japan during the COVID-19 Pandemic

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    The recent prolonged COVID-19 pandemic has worsened the daily lives of preschoolers and elementary school children worldwide. Although these changes may have affected their mental health, the full picture still remains unknown. Since March 2020, Japan has intermittently experienced several COVID-19 waves. This survey was conducted between February and March 2022. In this study, we investigated the pathways by which specific lifestyle factors (such as exercise, sleep, diet, and life skills) affect physical/psychosocial health (PPH) in 1183 preschoolers (3–5 years old) and 3156 elementary school children (6–11 years old) in Toyama Prefecture, Japan. These pathways were examined using a path analysis. Consequently, “life skills” was found to be the factor most strongly associated with PPH in both preschoolers and elementary school children (p p < 0.001). The results of the current study may be helpful for early interventions (around the start of elementary school) at home and at school to improve children’s mental health during the COVID-19 pandemic

    Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

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    We systematically examined the effects of the substrate temperature (TS) and the oxygen pressure (PO2) on the structural and optical properties polycrystalline V O2 films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O2 phase was formed at a TS ≥ 450 °C at PO2 values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O2 films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O2 on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O2 films grown at a TS of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the TS and PO2, and was maximal for a V O2 film grown at 450 °C under 20 mTorr. Based on the results, we derived the PO2 versus 1/TS phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O2 films on silicon platforms

    Influence of the doping concentration of Y1−yCayBa2Cu3O7−δ drain-source channels on the properties of superconducting field-effect devices

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    Influence of the doping concentration of YBa2u3O7-&#948; drain-source channels on the properties of superconducting field-effect devices / J. Mannhart ... – In: Applied physics letters. 83. 2003. S. 3528-353

    Optical Second Harmonic Generation on Ferroelectric Polarization Reversal for Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors

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    Optical second harmonic generation (SHG) is observed in materials with broken spatial inversion symmetry; thus, it can be used for the characterization of ferroelectrics with broken spatial inversion symmetry. In this study, we performed SHG measurements on the polarization reversal of ferroelectric capacitors consisting of a Hf0.5Zr0.5O2 (HZO) layer and indium tin oxide (ITO) electrodes. The SHG signals for the ITO/HZO/ITO capacitors were measured by applying a sequence of unipolar triangular voltage pulses, and SHG signal–voltage hysteresis loops were obtained. We qualitatively analyzed the results using models assuming the coexistence of switchable ferroelectric polarization in the HZO layer and nonswitchable apparent polarizations (fixed polarizations) at the surface, interfaces, and in the HZO layer of the capacitors. The analyses revealed that the SHG signals from the apparent polarizations of the capacitors were larger than those from ferroelectric polarization in the HZO layer, and the observed hysteretic SHG signal–voltage loops were attributable to polarization reversal (switching) in the HZO layer. These findings demonstrate that SHG measurements can reveal the existence of apparent polarizations in ferroelectric capacitors, as well as evaluate the impact of apparent polarizations on SHG signals compared to that of ferroelectric polarizations. This is an advantage of the SHG measurement over other electrical methods, which only address switchable ferroelectric polarization. Thus, SHG measurements can be used to detect polarizations at the surface and interfaces; the results of the study provide useful insights for improving the device performance of HfO2-based ferroelectrics

    Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

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    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers
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