Tunneling transport in NSN junctions made of Majorana nanowires across the topological quantum phase transition

We theoretically consider transport properties of a normal metal (N)- superconducting semiconductor nanowire (S)-normal metal (N) structure (NSN) in the context of the possible existence of Majorana bound states in disordered semiconductor-superconductor hybrid systems in the presence of spin-orbit coupling and Zeeman splitting induced by an external magnetic field. We study in details the transport signatures of the topological quantum phase transition as well as the existence of the Majorana bound states in the electrical transport properties of the NSN structure. Our theory includes the realistic nonperturbative effects of disorder, which is detrimental to the topological phase (eventually suppressing the superconducting gap completely), and the effects of the tunneling barriers (or the transparency at the tunneling NS contacts), which affect (and suppress) the zero bias conductance peak associated with the zero energy Majorana bound states. We show that in the presence of generic disorder and barrier transparency the interpretation of the zero bias peak as being associated with the Majorana bound state is problematic since the nonlocal correlations between the two NS contacts at two ends may not manifest themselves in the tunneling conductance through the whole NSN structure. We establish that a simple modification of the standard transport measurements using conductance differences (rather than the conductance itself as in a single NS junction) as the measured quantity can allow direct observation of the nonlocal correlations inherent in the Majorana bound states and enables the mapping out of the topological phase diagram (even in the presence of considerable disorder) by precisely detecting the topological quantum phase transition point.Comment: 34 pages, 7 figures, 1 table. New version with minor modifications and more physical discussion

Spatial persistence and survival probabilities for fluctuating interfaces

We report the results of numerical investigations of the steady-state (SS) and finite-initial-conditions (FIC) spatial persistence and survival probabilities for (1+1)--dimensional interfaces with dynamics governed by the nonlinear Kardar--Parisi--Zhang (KPZ) equation and the linear Edwards--Wilkinson (EW) equation with both white (uncorrelated) and colored (spatially correlated) noise. We study the effects of a finite sampling distance on the measured spatial persistence probability and show that both SS and FIC persistence probabilities exhibit simple scaling behavior as a function of the system size and the sampling distance. Analytical expressions for the exponents associated with the power-law decay of SS and FIC spatial persistence probabilities of the EW equation with power-law correlated noise are established and numerically verified.Comment: 11 pages, 5 figure

Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Valley interference effects on a donor electron close to a Si/SiO2 interface

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling).Comment: 7 pages, 5 figure

Spin Polarization Dependence of Carrier Effective Mass in Semiconductor Structures: Spintronic Effective Mass

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at rs=5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (~15%) is more modest in three dimensions around metallic densities (rs~5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.Comment: Final versio