Interconexión monolítica de dispositivos fotovoltaicos basados en a-Si mediante ablación directa con fuentes láser ultravioleta

Resumen En la última década la tecnología láser se ha convertido en una herramienta imprescindible en la fabricación de dispositivos fotovoltaicos, muy especial¬mente en aquellos basados en tecnología de lámina delgada. Independiente¬mente de crisis coyunturales en el sector, la evolución en los próximos años de estas tecnologías seguirá aprovechándose de la flexibilidad y calidad de proceso de la herramienta láser para la consecución de los dos objetivos básicos que harán de la fotovoltaica una opción energética económicamente viable: la reducción de costes de fabricación y el aumento de eficiencia de los dispositivos. Dentro de las tecnologías fotovoltaicas de lámina delgada, la tecnología de dispositivos basados en silicio amorfo ha tenido un gran desarrollo en sistemas estándar en configuración de superestrato, pero su limitada efi¬ciencia hace que su supervivencia futura pase por el desarrollo de formatos en configuración de substrato sobre materiales flexibles de bajo coste. En esta aproximación, las soluciones industriales basadas en láser actualmente disponibles para la interconexión monolítica de dispositivos no son aplica¬bles, y desde hace años se viene investigando en la búsqueda de soluciones apropiadas para el desarrollo de dichos procesos de interconexión de forma que sean transferibles a la industria. En este contexto, esta Tesis propone una aproximación completamente orig¬inal, demostrando la posibilidad de ejecutar una interconexión completa de estos dispositivos irradiando por el lado de la lámina (es decir de forma com¬patible con la opción de configuración de substrato y, valga la redundancia, con el substrato del dispositivo opaco), y con fuentes láser emitiendo en UV. Este resultado, obtenido por primera vez a nivel internacional con este trabajo, aporta un conocimiento revelador del verdadero potencial de estas fuentes en el desarrollo industrial futuro de estas tecnologías. Si bien muy posiblemente la solución industrial final requiera de una solución mixta con el empleo de fuentes en UV y, posiblemente, en otras longitudes de onda, esta Tesis y su planteamiento novedoso aportan un conocimiento de gran valor a la comunidad internacional por la originalidad del planteamiento seguido, los resultados parciales encontrados en su desarrollo (un número importante de los cuales han aparecido en revistas del JCR que recogen en la actualidad un número muy significativo de citas) y porque saca además a la luz, con las consideraciones físicas pertinentes, las limitaciones intrínsecas que el desarrollo de procesos de ablación directa selectiva con láseres UV en parte de los materiales utilizados presenta en el rango temporal de in¬teracción de ns y ps. En este trabajo se han desarrollado y optimizado los tres pasos estándar de interconexión (los habitualmente denominados Pl, P2 y P3 en la industria fotovoltaica) demostrando las ventajas y limitaciones del uso de fuentes en UV tanto con ancho temporal de ns como de ps. En particular destaca, por el éxito en los resultados obtenidos, el estudio de procesos de ablación selectiva de óxidos conductores transparentes (en este trabajo utilizados tanto como contacto frontal así como posterior en los módulos) que ha generado resultados, de excelente acogida científica a nivel internacional, cuya aplicación trasciende el ámbito de las tecnologías de silicio amorfo en lámina delgada. Además en este trabajo de Tesis, en el desarrollo del objetivo citado, se han puesto a punto técnicas de análisis de los procesos láser, basadas en métodos avanzados de caracterización de materiales (como el uso combi¬nado de la espectroscopia dispersiva de rayos X y la microscopía confocal de barrido) que se presentan como auténticos avances en el desarrollo de técnicas específicas de caracterización para el estudio de los procesos con láser de ablación selectiva de materiales en lámina delgada, procesos que no solo tienen impacto en el ámbito de la fotovoltaica, sino también en la microelectrónica, la biotecnología, la microfabricación, etc. Como resultado adicional, parte de los resultados de este trabajo, han sido aplicados exi¬tosamente por el grupo de investigaci´on en la que la autora desarrolla su labor para conseguir desarrollar procesos de enorme inter´es en otras tec-nolog´ıas fotovoltaicas, como las tecnolog´ıas est´andar de silicio amorfo sobre vidrio en configuraci´on de superestrato o el procesado de capas delgadas en tecnolog´ıas convencionales de silicio cristalino. Por u´ltimo decir que este trabajo ha sido posible por una colaboraci´on muy estrecha entre el Centro L´aser de la UPM, en el que la autora de¬sarrolla su labor, y el Grupo de Silicio Depositado del Centro de Inves¬tigaciones Energ´eticas, Medioambientales y Tecnol´ogicas, CIEMAT, que, junto al Grupo de Energ´ıa Fotovoltaica de la Universidad de Barcelona, han preparado la mayor parte de las muestras utilizadas en este estudio. Dichas colaboraciones se han desarrollado en el marco de varios proyectos de investigaci´on aplicada con subvenci´on pu´blica, tales como el proyecto singular estrat´egico PSE-MICROSIL08 (PSE-120000-2006-6), el proyecto INNDISOL (IPT-420000-2010-6), ambos financiados porel Fondo Europeo de Desarrollo Regional FEDER (UE) ”Una manera de hacer Europa y el MICINN, y los proyectos de Plan Nacional AMIC (ENE2010-21384-C04-´ 02) y CLASICO (ENE2007-6772-C04-04), cuya financiaci´on ha permitido en gran parte llevar a t´ermino este trabajo Abstract In the last decade, the laser technology has turned into an indispensable tool in the production of photovoltaic devices, especially of those based on thin film technology. Regardless the current crisis in the sector, the evolution of these technologies in the upcoming years will keep taking advantage of the flexibility and process quality of the laser tool for the accomplishment of the two basic goals that will convert the photovoltaic energy into economically viable: the manufacture cost reduction and the increase in the efficiency of the devices. Amongst the thin film laser technologies, the technology of devices based on amorphous silicon has had a great development in standard systems of superstrate configuration, but its limited efficiency makes its survival de¬pendant on the development of formats in substrate configuration with low cost flexible materials. In this approach, the laser industrial solutions cur¬rently available for the monolithic interconnection are not applicable, and in the last few years the investigations have been focused on the search of appropriate solutions for the development of such interconnection processes in a way that the same are transferable to the industry. In this context, this Thesis proposes a totally original approach, proving the possibility of executing a full interconnection of these devices by means of irradiation from the film side, i.e., compatible with the substrate con¬figuration, and with UV laser sources. This result, obtained for the first time at international level in this work, provides a revealing knowledge of the true potential of these sources in the future industrial development of these technologies. Even though very probably the final industrial solution will require a combination of the use of UV sources along with other wave¬lengths, this Thesis and its novel approach contribute with a high value to the international community because of the originality of the approach, the partial results found throughout its development (out of which, a large number has appeared in JCR journals that currently accumulate a signifi¬cant number of citations) and brings to light, with the pertinent scientific considerations, the intrinsic limitations that the selective direct ablation processes with UV laser present in the temporal range of interaction of ns and ps for part of the materials used in this study. More particularly, the three standard steps of interconnection (usually de¬nominated P1, P2 and P3 in the photovoltaic industry) have been developed and optimized, showing the advantages as well as the limitations of the use of UV sources in both the ns and ps pulse-width ranges. It is highly remark¬able, because of the success in the obtained results, the study of selective ablation processes in transparent conductive oxide (in this work used as a front and back contact), that has generated results, of excellent interna¬tional scientific reception, whose applications go beyond the scope of thin film photovoltaic technologies based on amorphous silicon. Moreover, in this Thesis, with the development of the mentioned goal, differ¬ent techniques of analysis of laser processes have been fine-tuned, basing the same in advanced methods for material characterization (like the combined use of EDX Analysis and Confocal Laser Scanning Microscopy) that can be presented as true breakthroughs in the development of specific techniques for characterization in the study of laser processes of selective ablation of materials in thin film technologies, processes that not only have impact in the photovoltaic field, but also in those of microelectronics, biotechnology, micro-fabrication, etc. As an additional outcome, part of the results of this work has been suc¬cessfully applied, by the investigation group to which the author belongs, to the development of processes of enormous interest within other photo¬voltaic technologies, such as the standard technologies on amorphous silicon over glass in superstrate configuration or the processing of thin layers in conventional technologies using crystalline silicon. Lastly, it is important to mention that this work has been possible thanks to the close cooperation between the Centro L´aser of the UPM, in which the author develops her work, and the Grupo de Silicio Depositado of Centro de Investigaciones Energ´eticas, Medioambientales y Tecnol´ogicas, CIEMAT, which, along with the Grupo de Energ´ıa Fotovoltaica of Univer¬sidad de Barcelona, has prepared the largest part of the samples utilized in this study. Such collaborations have been carried out in the context of several projects of applied investigation with public funding, like Proyecto Singular Estrat´egico PSE-MICROSIL08 (PSE-120000-2006-6), Proyecto IN-NDISOL (IPT-420000-2010-6), both funded by the European Regional De¬velopment Fund (ERDF), ”Una manera de hacer Europa” and MICINN, and the projects of Plan Nacional AMIC (ENE2010-21384-C04-02) and ´ CLASICO (ENE2007-6772-C04-04), whose funds have enabled the devel-opment of large part of this work

Laser induced forward transfer of silver pastes for printing of fingers in c-si cells.

The main objective of this work is to adapt the Laser Induced Forward Techniques (LIFT), a well- known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. The silver paste (with viscosity around 30-50 kcPs) is applied over a glass substrate using a coater. The thickness of the paste can be control changing the deposit parameters. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused at the glass/silver interface producing a droplet of silver that it is transferred to the c-Si cell. A scanner is used to print lines. The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the lines is studied using confocal microscopy. Long lines are printed and the uniformity (in thickness and height) is studied. Some examples of metallization of larger areas (up to 10 cm x 10 cm) are presented

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysi

Micromecanizado Láser de Componentes de Gran calidad de Acabado Superficial

El uso de láseres pulsados con anchos temporales de nanosegundos y longitudes de onda en el rango Ultravioleta, permiten un preciso control del material abferido, convirtiendo dicha técnica en una herramienta fundamental para mecanizados que requieren de una gran calidad y acabado, con relaciones de aspecto muy altas. Este trabajo presenta un análisis paramétrico de la influencia de las distintas variables de proceso para diferentes tipos de materiales (metálicos, dieléctricos, materiales orgánicos, etc) en la calidad y acabado final. The use of nanoseconds U.V. lasers permits a precise control in ablation’s processes. As a result this tool plays a fundamental role in machining where a high quality and good aspect ratios are required. This paper presents a parametric analysis of the influence of some processing parameters for different types of materials

New strategies in laser processing of TCOs for light management improvement in thin-film silicon solar cells

Light confinement strategies play a crucial role in the performance of thin-film (TF) silicon solar cells. One way to reduce the optical losses is the texturing of the transparent conductive oxide (TCO) that acts as the front contact. Other losses arise from the mismatch between the incident light spectrum and the spectral properties of the absorbent material that imply that low energy photons (below the bandgap value) are not absorbed, and therefore can not generate photocurrent. Up-conversion techniques, in which two sub-bandgap photons are combined to give one photon with a better matching with the bandgap, were proposed to overcome this problem. In particular, this work studies two strategies to improve light management in thin film silicon solar cells using laser technology. The first one addresses the problem of TCO surface texturing using fully commercial fast and ultrafast solid state laser sources. Aluminum doped Zinc Oxide (AZO) samples were laser processed and the results were optically evaluated by measuring the haze factor of the treated samples. As a second strategy, laser annealing experiments of TCOs doped with rare earth ions are presented as a potential process to produce layers with up-conversion properties, opening the possibility of its potential use in high efficiency solar cells

Efecto de los grados día de ayuno y del hacinamiento previos al sacrificio sobre el contenido estomacal y respuesta de estrés en trucha arcoíris (Oncorhynchus mykiss)

El ayuno pre-sacrificio es una práctica rutinaria en acuicultura que se lleva a cabo para vaciar el aparato digestivo disminuyendo la cantidad de heces y previniendo una contaminación de la canal (Robb, 2008). Sin embargo, el ayuno puede también incrementar los niveles de estrés de los peces y si estos son lo suficientemente altos afectan a la calidad de la canal (Poli et al., 2005)

LIFT front-contact metallization of silicon solar cells

© 2021 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/Laser-Induced Forward Transfer (LIFT) is a very versatile technique, allowing the selective transfer of a wide range of materials with no contact and high accuracy. This work includes the analysis of heterojunction silicon solar cells with the frontal grid deposited by LIFT, and the electric characterization of the deposited lines.Partial financial support for this work has been provided by the Spanish Ministry of Science and Innovation under the projects CHENOC (ENE2016-78933-C4-1-R and ENE2016-78933-C4-4-R) and SCALED (PID2019-109215RBC41 and PID2019-109215RB-C44).Peer ReviewedPostprint (author's final draft

Silicon PV module customization using laser technology for new BIPV applications

It is well known that lasers have helped to increase efficiency and to reduce production costs in the photovoltaic (PV) sector in the last two decades, appearing in most cases as the ideal tool to solve some of the critical bottlenecks of production both in thin film (TF) and crystalline silicon (c-Si) technologies. The accumulated experience in these fields has brought as a consequence the possibility of using laser technology to produce new Building Integrated Photovoltaics (BIPV) products with a high degree of customization. However, to produce efficiently these personalized products it is necessary the development of optimized laser processes able to transform standard products in customized items oriented to the BIPV market. In particular, the production of semitransparencies and/or freeform geometries in TF a-Si modules and standard c-Si modules is an application of great interest in this market. In this work we present results of customization of both TF a-Si modules and standard monocrystalline (m-Si) and policrystalline silicon (pc-Si) modules using laser ablation and laser cutting processes. A discussion about the laser processes parameterization to guarantee the functionality of the device is included. Finally some examples of final devices are presented with a full discussion of the process approach used in their fabrication

Analysis by finite element calculations of light scattering in laser-textured AZO films for PV thin-film solar cells

In the thin-film photovoltaic industry, to achieve a high light scattering in one or more of the cell interfaces is one of the strategies that allow an enhancement of light absorption inside the cell and, therefore, a better device behavior and efficiency. Although chemical etching is the standard method to texture surfaces for that scattering improvement, laser light has shown as a new way for texturizing different materials, maintaining a good control of the final topography with a unique, clean, and quite precise process. In this work AZO films with different texture parameters are fabricated. The typical parameters used to characterize them, as the root mean square roughness or the haze factor, are discussed and, for deeper understanding of the scattering mechanisms, the light behavior in the films is simulated using a finite element method code. This method gives information about the light intensity in each point of the system, allowing the precise characterization of the scattering behavior near the film surface, and it can be used as well to calculate a simulated haze factor that can be compared with experimental measurements. A discussion of the validation of the numerical code, based in a comprehensive comparison with experimental data is included

Avances en la fabricación de células y módulos fotovoltaicos de silicio en capa fina mediante láser

El láser es un instrumento omnipresente en la fabricación de módulos fotovoltaicos. Los láser estándar para la interconexión monolítica de dispositivos de lámina delgada de a-Si son láser de estado sólido bombeados por diodo (DPSS) emitiendo en longitudes IR (λ=1064 nm) y en VIS (λ=532 nm). En este trabajo mostramos estudios de ablación de algunos materiales fotovoltaicos (óxidos conductores transparentes (OCT) y a-Si) con láser emitiendo en UV en el régimen de nanosegundos (ns). La afección térmica resultante en la ablación es menor, y por tanto se reduciría el riesgo de cortocircuitos en la interconexión monolítica, convirtiendo a las fuentes láser UV como herramientas prometedoras como alternativa a las fuentes estándar. Laser is an essential tool for photovoltaic modules manufacturing. Nowadays DPSS working at IR ( λ=1064 nm) and VIS (λ=532 nm) wavelengths are standard tools for thin film module fabrication. In this work we present ablation studies of some photovoltaic materials (transparent conductive oxides (TCO) and a-Si) using nanoseconds (ns) laser sources emitting in the UV. The thermal affection is minimized, and therefore it would be reduced the short-circuit formation risk in the monolithic interconnection, demonstrating the potential use of ns laser sources emitting in the UV as promising alternative tools to the standard laser sources