Resistively-detected NMR lineshapes in a quasi-one dimensional electron system

We observe variation in the resistively-detected nuclear magnetic resonance (RDNMR) lineshapes in quantum Hall breakdown. The breakdown is locally occurred in a gate-defined quantum point contact (QPC) region. Of particular interest is the observation of a dispersive lineshape occured when the bulk 2D electron gas (2DEG) is set to $\nu_{\rm{b}} = 2$ and the QPC filling factor to the vicinity of $\nu_{\rm{QPC}} = 1$, strikingly resemble the dispersive lineshape observed on a 2D quantum Hall state. This previously unobserved lineshape in a QPC points to simultaneous occurrence of two hyperfine-mediated spin flip-flop processes within the QPC. Those events give rise to two different sets of nuclei polarized in the opposite direction and positioned at a separate region with different degree of electronic polarizations.Comment: Accepted as a rapid communication in PR

Fabrication and characterization of crystalline cupric oxide (CUO) films by simple immersion technique

Cupric oxide (CuO) is one of the most promising p-type semiconducting materials used in p-n junction solar cells. Most of the researchers use electrochemical deposition (ECD) to deposit CuO film. However, it always requires a conductive substrate and the resulting film is porous. In this work, we demonstrated a simple method using an immersion technique to deposit nanostructured CuO for p-n solar cell application. Compared to ECD which end up with only pyramid-like structure, an immersion technique offers flexibility on the CuO nanostructures such as spheres, particles, diamond etc. This technique also offers higher deposition rate which allow deposition at thicker thickness. The adherence to the substrate can be manipulated depending on the pH of the solution. The resuling film was tested into a p-n solar cell using configuration of Au/ZnO/Cuo/ITO/glass. Although there is no efficiency obtained under the solar radiation, it shows a solar cell characteristic with open circuit voltage (Voc) of 1.5

Description of the Public Knowledge and Stigma Against PLWHA in Niki-Niki Sub District, Central Amanuban District, TTS Regency

The stigma against People Living With HIV and AIDS (PLWHA) is influenced by several factors, including low levels of formal education and lack of knowledge related to to HIV and AIDS. The aim of this study was to describe the knowledge and stigma of the community towards PLWHA in Niki-Niki Village, Central Amanuban District, TTS Regency. This study uses descriptive quantitative research methods with Simple Random Sampling techniques to 70 people. The research instrument used was a questionnaire and the analysis was carried out quantitatively descriptive. The results showed that respondents with good knowledge had higher stigma against PLWHA than those with less knowledge. Many people do not really understand about the transmission  of the HIV. Hopefully the public will increase their knowledge about HIV, specifically HIV transmission, and eliminate the stigma of PLWHA

Sonicated Sol-gel Preparation of Nanoparticulate ZnO Thin Films with Various Deposition Speeds: The highly Preferred c-axis (0 0 2) Orientation Enhances the Final Properties

Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol-gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (Eg) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation

Growth of Aluminium Nitride Thin Film using Pulse-Modulated Rf Magnetron Sputtering Plasma

Aluminum nitride (AlN) thin films on silicon (Si) (100) substrates are grown by pulsed rf magnetron sputtering at constant power 200 W, 50 % duty cycle, and substrate at room temperature. The films were characterized using filmetrics, X-ray diffraction, energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques. The deposited AlN thickness using frequency of 5 Hz for distance of 1-inch and 6-inches were 70.74 nm and 20.40 nm, respectively. The depositions rate is obviously affected by the working distance between the target to the substrates. This is because, at shorter distance between target to substrate, the kinetic energy of bombardment particles become higher. Thus, higher deposition rate and good crystallinity can be obtained as the Al atom and N atom will deposited directly to the substrates. Then, the effect of pulse frequency was investigated.  The thickness of AlN thin films using frequency of 5 Hz, 3 Hz and 1 Hz is 70.74 nm 63.72 nm, and 70.23 nm, respectively. The effects of frequency using pulsed rf magnetron was significantly small. The experimental results clearly demonstrate that the energy supplied to the plasma significantly influence the stoichiometric and crystallisation of the thin films