Deficiency of the scaling collapse as an indicator of a superconductor-insulator quantum phase transition

Finite-size scaling analysis is a well-accepted method for identification and characterization of quantum phase transitions (QPTs) in superconducting, magnetic and insulating systems. We formally apply this analysis in the form suitable for QPTs in 2-dimensional superconducting films to magnetic-field driven superconductor-metal transition in 1-dimensional MoGe nanowires. Despite being obviously inapplicable to nanowires, the 2d scaling equation leads to a high-quality scaling collapse of the nanowire resistance in the temperature and resistance ranges comparable or better to what is accepted in the analysis of the films. Our results suggest that the appearance and the quality of the scaling collapse by itself is not a reliable indicator of a QPT. We have also observed a sign-change of the zero-bias anomaly (ZBA) in the non-linear resistance, occurring exactly at the critical field of the accidental QPT. This behavior is often taken as an additional confirmation of the transition. We argue that in nanowires, the non-linearity is caused by electron heating and has no relation to the critical fluctuations. Our observation suggests that similar to the scaling collapse, the sign-change of ZBA can be a misleading indicator of QPT.Comment: 9 pages, 5 figure

Quantum breakdown of superconductivity in low-dimensional materials

In order to understand the emergence of superconductivity it is useful to study and identify the various pathways leading to the destruction of superconductivity. One way is to use the increase in Coulomb-repulsion due to the increase in disorder, which overpowers the attractive interaction responsible for Cooper-pair formation. A second pathway, applicable to uniformly disordered materials, is the competition between superconductivity and Anderson localization, which leads to electronic granularity in which phase and amplitude fluctuations of the superconducting order parameter play a role. Finally, a third pathway is an array of superconducting islands coupled by some form of proximity-effect, due to Andreev-reflections, and which leads from a superconducting state to a state with finite resistivity, which appears like a metallic groundstate. This review summarizes recent progress in understanding of these different pathways, including experiments in low dimensional materials and application in superconducting quantum devices.Comment: Review Articl

Magneto-transport through graphene nano-ribbons

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales associated to charging effects, and to hopping processes probed by temperature-dependent measurements. All the observations can be interpreted consistently in terms of strong-localization effects caused by the large disorder present, and exclude that the insulating state observed in nano-ribbons can be explained solely in terms of a true gap between valence and conduction band.Comment: 4 pages, 5 figure

Scanning-gate microscopy of semiconductor nanostructures: an overview

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.Comment: Invited talk by SH at 39th "Jaszowiec" International School and Conference on the Physics of Semiconductors, Krynica-Zdroj, Poland, June 201

Metal-to-insulator transition and superconductivity in boron-doped diamond

International audienceThe experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon

Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene

We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-P\'erot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field $B^*$ corresponding to the cyclotron radius equal to the npn cavity length, Fabry-P\'erot resonances vanish and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction, with distortions due to the combination of confinement and de-confinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations

Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS2_{2}

Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has not been possible due to the difficulty of reaching the quantum limit. Here, we report evidence for fractional quantum Hall (FQH) states at filling fractions 4/5 and 2/5 in the lowest LL of bilayer MoS$_{2}$, manifested in fractionally quantized transverse conductance plateaus accompanied by longitudinal resistance minima. We further show that the observed FQH states sensitively depend on the dielectric and gate screening of the Coulomb interactions. Our findings establish a new FQH experimental platform which are a scarce resource: an intrinsic semiconducting high mobility electron gas, whose electronic interactions in the FQH regime are in principle tunable by Coulomb-screening engineering, and as such, could be the missing link between atomically thin graphene and semiconducting quantum wells.Comment: 10 pages, 4 figure

Pair-breaking quantum phase transition in superconducting nanowires

A quantum phase transition (QPT) between distinct ground states of matter is a wide-spread phenomenon in nature, yet there are only a few experimentally accessible systems where the microscopic mechanism of the transition can be tested and understood. These cases are unique and form the experimentally established foundation for our understanding of quantum critical phenomena. Here we report the discovery that a magnetic-field-driven QPT in superconducting nanowires - a prototypical 1d-system - can be fully explained by the critical theory of pair-breaking transitions characterized by a correlation length exponent $\nu \approx 1$ and dynamic critical exponent $z \approx 2$. We find that in the quantum critical regime, the electrical conductivity is in agreement with a theoretically predicted scaling function and, moreover, that the theory quantitatively describes the dependence of conductivity on the critical temperature, field magnitude and orientation, nanowire cross sectional area, and microscopic parameters of the nanowire material. At the critical field, the conductivity follows a $T^{(d-2)/z}$ dependence predicted by phenomenological scaling theories and more recently obtained within a holographic framework. Our work uncovers the microscopic processes governing the transition: The pair-breaking effect of the magnetic field on interacting Cooper pairs overdamped by their coupling to electronic degrees of freedom. It also reveals the universal character of continuous quantum phase transitions.Comment: 22 pages, 5 figure