Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

We have used positron annihilation spectroscopy to study the thermal behavior of different native vacancy defects typical of freestanding GaN grown by hydride vapor phase epitaxy under high pressure annealing at different annealing temperatures. The results show that the VGa‐ON pairs dissociate and the Ga vacancies anneal out from the bulk of the material at temperatures 1500–1700K. A binding energy of Eb=1.6(4)eV can be determined for the pair. Thermal formation of Ga vacancies is observed at the annealing temperatures above 1700K, indicating that Ga vacancies are created thermally at the high growth temperature, but their ability to form complexes such as VGa‐ON determines the fraction of vacancy defects surviving the cooling down. The formation energy of the isolated Ga vacancy is experimentally determined.Peer reviewe

Clustering of vacancy defects in high-purity semi-insulating SiC

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy (HVPE)growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-μm-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopyimages show the dislocation density of the free-standing HVPE-GaN to be ∼2.5×10 exp 7  cm exp −2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8×10 exp 15 cm exp−3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 (3.4712) eV and 3.4721 (3.4718) eV for the Ga- (N-) polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E1(TO) phonon mode position measured at 558.52 cm exp −1 (Ga face) by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.Peer reviewe

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

Abstract. Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Vacancy-type defect production in Al- and Si-implanted 4H–SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show that the concentration of displaced silicon atoms increases rapidly with increasing ion fluence. In the ion fluence interval of 10¹³–10¹⁴cm¯² the positron annihilation parameters are roughly constant at a defect level tentatively associated with the divacancy VCVSi. Above the ion fluence of 10¹⁴cm¯² larger vacancy clusters are formed. For implantations as a function of ion flux (cm¯²s¯¹), ion channeling and positron annihilation measurements behave similarly, i.e., indicating increasing damage in the projected range region with increasing ion flux. However, for samples implanted at different temperatures the positron annihilation parameter S shows a clear minimum at approximately 100°C, whereas the normalized backscattering yield decrease continuously with increasing implantation temperature. This is explained by the formation of larger vacancy clusters when the implantation temperature is increased.This work has been supported partly by the Nordic Academy for Education and Research Training (NorFa) and the Swedish Foundation for International cooperation in Research and Higher Education (STINT)

Matched Comparison of Magnetically-Controlled Growing Rods with Traditional Growing Rods for Severe Early Onset Scoliosis >90 degrees. An interim report at 2-year follow-up

Peer reviewe

Theoretical and experimental study of positron annihilation with core electrons in solids

A theory for calculating the momentum distribution of annihilating positron-electron pairs in solids is presented. To test the theory, momentum distributions are measured by the Doppler broadening of the annihilation radiation for several bulk metals and semiconductors, as well as for semiconductor alloys and for positrons trapped at vacancies in semiconductors. The theory is based on a two-particle description of the annihilating electron-positron pair. Then, the electron-positron correlation effects, i.e., the enhancement of the electron density at the positron, depend on the electronic state in question. The theory is suited for calculating the high-momentum part of the annihilation spectrum that arises from the core electrons and which can be measured by the Doppler broadening using coincidence techniques. The ideas of the theory are justified by a good agreement between theory and experiment in the case of positron annihilation in undefected bulk lattices. Moreover, the comparison of the theoretical and experimental spectra for alloys and vacancy defects tests the theoretical description for the positron distribution in delocalized and localized states, respectively.Peer reviewe

Hall Normalization Constants for the Bures Volumes of the n-State Quantum Systems

We report the results of certain integrations of quantum-theoretic interest, relying, in this regard, upon recently developed parameterizations of Boya et al of the n x n density matrices, in terms of squared components of the unit (n-1)-sphere and the n x n unitary matrices. Firstly, we express the normalized volume elements of the Bures (minimal monotone) metric for n = 2 and 3, obtaining thereby "Bures prior probability distributions" over the two- and three-state systems. Then, as an essential first step in extending these results to n > 3, we determine that the "Hall normalization constant" (C_{n}) for the marginal Bures prior probability distribution over the (n-1)-dimensional simplex of the n eigenvalues of the n x n density matrices is, for n = 4, equal to 71680/pi^2. Since we also find that C_{3} = 35/pi, it follows that C_{4} is simply equal to 2^{11} C_{3}/pi. (C_{2} itself is known to equal 2/pi.) The constant C_{5} is also found. It too is associated with a remarkably simple decompositon, involving the product of the eight consecutive prime numbers from 2 to 23. We also preliminarily investigate several cases, n > 5, with the use of quasi-Monte Carlo integration. We hope that the various analyses reported will prove useful in deriving a general formula (which evidence suggests will involve the Bernoulli numbers) for the Hall normalization constant for arbitrary n. This would have diverse applications, including quantum inference and universal quantum coding.Comment: 14 pages, LaTeX, 6 postscript figures. Revised version to appear in J. Phys. A. We make a few slight changes from the previous version, but also add a subsection (III G) in which several variations of the basic problem are newly studied. Rather strong evidence is adduced that the Hall constants are related to partial sums of denominators of the even-indexed Bernoulli numbers, although a general formula is still lackin

KLEIN: A New Family of Lightweight Block Ciphers

Resource-efficient cryptographic primitives become fundamental for realizing both security and efficiency in embedded systems like RFID tags and sensor nodes. Among those primitives, lightweight block cipher plays a major role as a building block for security protocols. In this paper, we describe a new family of lightweight block ciphers named KLEIN, which is designed for resource-constrained devices such as wireless sensors and RFID tags. Compared to the related proposals, KLEIN has advantage in the software performance on legacy sensor platforms, while in the same time its hardware implementation can also be compact