Unification of bulk and interface electroresistive switching in oxide systems

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.Comment: 4 pages, 3 figures, accepted in PR

Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that may degrade the FET electrical characteristics. A chemical treatment process for the substrate ensures a reproducible device quality. With limited purification of the starting materials, hole mobilities of 10.7, 1.3, and 1.4 cm^2/Vs have been measured on rubrene, tetracene, and pentacene single crystals, respectively. Four-terminal measurements allow for the extraction of the "intrinsic" transistor channel resistance and the parasitic series contact resistances. The technique employed in this study shows potential as a general method for studying charge transport in field-accumulated carrier channels near the surface of organic single crystals.Comment: 26 pages, 7 figure

Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.Comment: 6 pages, 2 figures; to be published in Journal of Applied Physic

Ga-induced atom wire formation and passivation of stepped Si(112)

We present an in-depth analysis of the atomic and electronic structure of the quasi one-dimensional (1D) surface reconstruction of Ga on Si(112) based on Scanning Tunneling Microscopy and Spectroscopy (STM and STS), Rutherford Backscattering Spectrometry (RBS) and Density Functional Theory (DFT) calculations. A new structural model of the Si(112)6 x 1-Ga surface is inferred. It consists of Ga zig-zag chains that are intersected by quasi-periodic vacancy lines or misfit dislocations. The experimentally observed meandering of the vacancy lines is caused by the co-existence of competing 6 x 1 and 5 x 1 unit cells and by the orientational disorder of symmetry breaking Si-Ga dimers inside the vacancy lines. The Ga atoms are fully coordinated, and the surface is chemically passivated. STS data reveal a semiconducting surface and show excellent agreement with calculated Local Density of States (LDOS) and STS curves. The energy gain obtained by fully passivating the surface calls the idea of step-edge decoration as a viable growth method toward 1D metallic structures into question.Comment: Submitted, 13 pages, accepted in Phys. Rev. B, notational change in Fig.

Self consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems

A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal/insulator/metal system in forward and reverse bias for arbitrary values of the metal/ insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplary using a simplified model of an organic semiconductor.Comment: 21 pages, 8 figure

An INSPECT Measurement System for Moving Objects

published_or_final_versio

Thermionic charge transport in CMOS nano-transistors

We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.Comment: Accepted for publication in Phys. Rev.

Evidence of environmental strains on charge injection in silole based organic light emitting diodes

Using d. functional theory (DFT) computations, the authors demonstrated a substantial skeletal relaxation when the structure of 2,5-bis-[4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase comparing with the mol. structure detd. from monocrystal x-ray diffraction. The origin of such a relaxation is explained by a strong environmental strains induced by the presence of anthracene entities. Also, the estn. of the frontier orbital levels showed that this structural relaxation affects mainly the LUMO that is lowered of 190 meV in the gas phase. To check if these theor. findings would be confirmed for thin films of BAS, the authors turned to UV photoemission spectroscopy and/or inverse photoemission spectroscopy and electrooptical measurements. The study of the c.d. or voltage and luminance or voltage characteristics of an ITO/PEDOT/BAS/Au device clearly demonstrated a very unusual temp.-dependent behavior. Using a thermally assisted tunnel transfer model, this behavior likely originated from the variation of the electronic affinity of the silole deriv. with the temp. The thermal agitation relaxes the mol. strains in thin films as it is shown when passing from the cryst. to the gas phase. The relaxation of the intramol. thus induces an increase of the electronic affinity and, as a consequence, the more efficient electron injection in org. light-emitting diodes

Field-induced metal-insulator transition and switching phenomenon in correlated insulators

We study the nonequilibrium switching phenomenon associated with the metal-insulator transition under electric field E in correlated insulator by a gauge-covariant Keldysh formalism. Due to the feedback effect of the resistive current I, this occurs as a first-order transition with a hysteresis of I-V characteristics having a lower threshold electric field (\sim 10^4 Vcm^{-1}) much weaker than that for the Zener breakdown. It is also found that the localized mid-gap states introduced by impurities and defects act as hot spots across which the resonant tunneling occurs selectively, which leads to the conductive filamentary paths and reduces the energy cost of the switching function.Comment: 5 pages, 3 figures. A study on the metal-insulator transition in correlated insulators was adde