Voltage characteristics of Ag,Al, Ni - (N)CTDE junction

Schottky barriers of Ag, Al, Ni–(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0×6–0×7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0×4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect the J–V characte

Seroprevalence of canine dirofilariosis, granulocytic anaplasmosis and lyme borreliosis of public health importance in dogs from India’s North East

Aim: Vector-borne infections namely dirofilariosis, ehrlichiosis, anaplasmosis and lyme borreliosis are being recognized as emerging and/or re-emerging problems in dogs and man due to rapid extension of zoogeographical ranges of many causative agents through international tourism and increase mobility of dogs at national and international level towards meeting the demand for companion animals in the present day society. Anticipating such situation, a serological study was conducted in dogs from North East India to estimate the prevalence of zoonotically important Dirofilaria immitis, Anaplasma phagocytophilum and Borrelia burgdorferi along with Ehrlichia canis. Materials and Methods: Serological study was carried out using enzyme immunoassay in commercial SNAP 4DX® test kit (Idexx Laboratories, USA). The study was conducted in 191 dogs comprising 82 pets, 57 stray and 52 working dogs owned by defence organizations. Results: The study revealed seroprevalence of mosquito-borne D. immitis (17.80%), tick-borne E. canis (22.51%) and A. phagocytophilum (4.71%) with an overall 41.88% prevalence of pathogens in single or co-infection. Serological evidence of tick-borne lyme borreliosis due to B. burgdorferi could not be established in dogs in the present study. Of the zoonotic species, highest prevalence of D. immitis was found in the stray dogs (22.80%) and that of A. phagocytophilum in pet dogs (6.09%). Conclusion: The results of the present serological study serve as baseline information on the prevalence of A. phagocytophilum in dogs reported for the first time in India and reaffirmation on the high prevalence of D. immitis and E. canis in the North East India

Electrical properties of thermally evaporated doped and undoped films of CdSe

Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky barrier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J- V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance

Effect of substrate temperature on structural properties of thermally evaporated ZnSe thin films

The ZnSe, a wide band gap semiconductor has high potential for application in optoelectronic applications. The structural parameters of a thin film semiconductor largely depend on the preparation method and condition. Transparent ZnSe thin films of thicknesses from 200

Study of Au, Ni-(n)ZnSe thin film Schottky barrier junctions

Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin films of doping concentrations up to 9.7×1014cm−3 have been fabricated with Au and Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions of different doping concentrations exhibited rectifying current-voltage characteristics with a non-saturating reverse current. From the current-voltage characteristics, the different junction parameters such as ideality factor, saturation current density, series resistance, etc., were measured. Both types of junctions were found to possess a high ideality factor and a high series resistance. The barrier heights of the junctions were measured from Richardson plots and found to be around 0.8 eV. The structures were found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The diode quality as well as the photovoltaic performance of the diodes were improved following a short heat treatment in vacuum