Electrical characteristics of Ag-doped and undoped films

of CdSe have been reported. The activation energies at

lower and elevated temperatures have been found to be

0.22 and 0.6eV, respectively. The Sn/CdSe junction

exhibits Schottky barrier characteristics with diode

ideality factor deviating from unity. Barrier height

obtained from C-V plot and J- V plot are 0.8 and 0.72eV,

respectively. The junction has been endowed with high

series resistance

BORAH , M N

CHALIHA , S

RAHMAN , A

SARMAH , P C

IR@NEIST - North East Institute of Science and Technology (CSIR)

Scopus - Indian Journal of Pure and Applied Physics: Electrical propertie... http://www.scopus.com/scopus/record/display.url?view=basic&eid=2-s2...1 of 4 02/04/2008 2:43 PMHelp Scopus LabsRegister | Login Cited By since 1996This article has been cited 0 times in Scopus.Inform me when this document is cited in Scopus: E-mail Alert Find related documentsIn Scopus based on   On the Web based on   title  Quick Search      44 of 120   Indian Journal of Pure and Applied Physics Volume 45, Issue 8, August 2007, Pages 687-691  Document Type: ArticleView references (26)Electrical properties of thermally evaporated doped and undoped films of CdSeBorah, M.N.a , Chaliha, S.a , Sarmah, P.C.b , Rahman, A.a a  Department of Physics, Gauhati University, Guwahati 781014b  Electronics Department, Regional Research Laboratory, Jorhat 785006AbstractElectrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky barrier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J- V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance.Author KeywordsActivation energy; Cadmium selenide; Electrical properties; Schottky barrierReferences (26) view in table layout   Select:  Page1. Mahawela, P., Jeedigunta, S., Vakkalanka, S., Ferekides,C.S., Morel, D.L.Transparent high-performance CDSE thin-film solar cells(2005) Thin Solid Films, 480-481, pp. 466-470. Cited 4 times.doi: 10.1016/j.tsf.2004.11.066referencesauthorskeywordsauthorskeywordsScopus - Indian Journal of Pure and Applied Physics: Electrical propertie... http://www.scopus.com/scopus/record/display.url?view=basic&eid=2-s2...2 of 4 02/04/2008 2:43 PM2. Murali, K.R., Austine, A., Jayasutha, B., Trivedi, D.C.Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates(2006) Solar Energy Materials and Solar Cells, 90 (6 SPEC.ISS.), pp. 753-759. Cited 2 times.doi: 10.1016/j.solmat.2005.04.0123. Klement, U., Ernst, F., Baretzky, B., Plitzko, J.M.Diffusion of oxygen in CdSe-photosensor arrays(2002) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 94 (2-3), pp.123-130. Cited 2 times.doi: 10.1016/S0921-5107(01)00899-64. Gogoi, S., Barua, K.ELECTRICAL CONDUCTION AND BREAKDOWN PHENOMENON IN DRY AIR STABILIZED CdSe FILMS.(1979) Japanese journal of applied physics, 18 (12), pp.2233-2236.5. Lee, M.J., Lee, S.-C.Extraction of the trap density and mobility in poly-CdSe thin films(1999) Solid-State Electronics, 43 (4), pp. 833-838. Cited 8 times.doi: 10.1016/S0038-1101(99)00007-66. 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Cited 88 times.Clarendon Press, Oxford Sarmah, P.C.; Electronics Department, Regional Research Laboratory, Jorhat 785006, ; email:pratap_sarmah@yahoo.com © Copyright 2008 Elsevier B.V., All rights reserved.Indian Journal of Pure and Applied Physics Volume 45, Issue 8, August 2007, Pages 687-691     44 of 120    About Scopus   |   Contact us   |   Terms & Conditions   |   Privacy Policy Copyright © 2008 Elsevier B.V. All rights reserved. Scopus® is a registered trademark of Elsevier B.V. 

Electrical properties of thermally evaporated doped and undoped films of CdSe

687-691Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance

Electrical properties of thermally evaporated doped and undoped films of CdSe

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