Schottky barrier junctions of Al-doped n-type Zinc selenide (ZnSe) thin
films of doping concentrations up to 9.7×1014cm−3 have been fabricated with Au and
Ni electrodes on glass substrates by sequential thermal evaporation. All of the junctions
of different doping concentrations exhibited rectifying current-voltage characteristics
with a non-saturating reverse current. From the current-voltage characteristics, the
different junction parameters such as ideality factor, saturation current density, series
resistance, etc., were measured. Both types of junctions were found to possess a high
ideality factor and a high series resistance. The barrier heights of the junctions were
measured from Richardson plots and found to be around 0.8 eV. The structures were
found to exhibit a poor photovoltaic effect with a fill factor not greater than 0.4. The
diode quality as well as the photovoltaic performance of the diodes were improved
following a short heat treatment in vacuum
