Stock assessment and biology of Johnius glaucus (Day) off the northwest coast of India

The stock size and biology of Johnius glaucus (Day) resource off the northwest coast of India were studied for 1982-83 and 1983-84. The total length at the end of 6, 12, 18, 24 and 26 months was 121 mm, 183 mm, 237 mm, 261 mm and 264 mm respectively. The length growth parameters were: L∞=300 mm, K=0.0807 (monthly) and t(sub)0=-0.51 month. The weight growth parameters were: W∞= 317g, K=0.0762 (monthly) and t(sub)0= -0.41 month. The exploited stock mainly composed of 1/2 + and 1+ age groups. The annual Z, M and F were 2.34, 1.49 and 0.85 respectively. The l(sub)b, t(sub)b, l(sub)r, t(sub)r and selection factor K were 155 mm, 0.75 year, 65 mm, 0.25 year and 3.875 respectively. The Yw/R was optimum at the exploitation rate (E) of 0.75 and coded mesh size of 37 mm. The total stock for 1982-83 and 1983-84 was 14,624 and 26,190 tons respectively. The standing stock of 1982-83 and 1983-84 was 5,645 and 10,110 tons respectively. The MSY for 1982-83 and 1983-84 was 6,623 and 11,788 tons respectively. The F and Z were lowest in 0+ age group and highest in 1+ age group

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM

Implementation of Steganographic Model using Inverted LSB Insertion

The most important thing in this insecure world is the secrecy of everything. In today’s world, any important data costs more than money. Steganography is the technique in which one can hide data as a secrete in selected image. In case of spatial domain, LSB approach is most popular in steganography, where all the LSBs of pixels of image are replaced by the bits of secret data. But the problem is that the secrete can be easily guessed by the hacker and the data is obtained by extracting it from direct LSBs. To make the system more robust and to improve the signal to noise ratio, the conventional LSB insertion method is replaced by inverted LSB technic. The decision to invert or not the LSB depends on combination of the 2nd and 3rd LSB. As not each and every LSB is inverted, it makes the steganalysis very difficult

Дослідження моделювання постійного, змінного та перехідного струмів кантілівера MEMS

Робота присвячена дослідженню моделювання постійного, змінного та перехідного струмів кантілівера MEMS. У роботі моделюється прямокутна система відкритого типу. У даному випадку ми змінювали довжину кантілівера MEMS (платиновий електрод) і вивчали його вплив у наступних випадках: i) вплив напруги на ємність і положення променю (аналіз постійного струму), ii) положення променю у часовій області, ємність і напруга (аналіз змінного струму) та iii) положення променю у часовій області, ємність і напруга (аналіз перехідних процесів). Результати показали, що довжина активного електрода кантілівера MEMS значно впливає на продуктивність MEMS. Крім того, напруга на кантілівері MEMS лінійно зростає з часом і виявилося, що вона не залежить від довжини електрода і діелектричних матеріалів, які використовувалися в розглянутій системі.The present reports deals with the DC, AC, and transient simulation study of MEMS cantilever. The open-ended rectangular system is simulated in the present investigation. In the present case, we have varied the length of MEMS cantilever (platinum electrode) and studied its effect on the following cases: i) the effect of voltage on the capacitance and beam position (DC analysis), ii) time domain beam position, capacitance, and voltage (AC analysis), and iii) time domain beam position, capacitance, and voltage (transient analysis). The results suggested that the length of an active electrode of MEMS cantilever significantly affects the MEMS performance. In addition, the voltage of MEMS cantilever linearly increases with respect to time and it was found to be independent of the electrode length and dielectric materials, which were used in the considered system