Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

Synthesis and properties of barium diketonates as precursors for MOCVD

The structures of barium diketonates depend on the way in which they are synthesized. It is shown that there is a correlation between the volatility of these compounds and their crystal structures. A new volatile mononuclear adduct of barium dipivaloylmethanate suitable for MOCVD is suggested

MOCVD of Ag thin films

The new mixed ligand complex [(n-Bu3P)Ag((CH3)3CCOO)] (I) is suggested as precursor for MOCVD of Ag thin films. It was characterized by elemental, TG analysis and by mass-spectrometry. It was shown that gas phase consisted only from monomeric molecules of I. X-ray study of (I) shows that crystal structure is build up from dimeric units with van der Waals interactions between them. Ag films were grown on Si and oxide substrates using I and [(Ag((CH3)3CCOO)] (II) precursors by CVD technique in presence of oxygen. The dependence of the films thickness, orientation and microstructure on the process parameters was defined. The use of the adduct was found to be at least 20 times more effective (regarding the film thickness) in comparison to that of II