The results of studies of the effectiveness of the radiation method for control the characteristics of the
IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons
with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International
Rectifier IRGB14C40L are discussed

Didenko, S.I.

Konovalov, M.P.

Krasnov, A.A.

Kuzmina, K.A.

Legotin, S.A.

Murashev, V.N.

Rabinovich, O.I.

Electronic Sumy State University Institutional Repository

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ Vol. 7 No 1, 01011(3pp) (2015) Том 7 № 1, 01011(3cc) (2015)   2077-6772/2015/7(1)01011(3) 01011-1  2015 Sumy State University Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors  V.N. Murashev, M.P. Konovalov, S.A. Legotin, S.I. Didenko, O.I. Rabinovich,  A.A. Krasnov, K.A. Кuzmina  National University of Science and Technology 'MISiS'  “Moscow Institute of Steel and Alloys”,  4, Leninskiy prosp., 119040 Moscow, Russian Federation  (Received 15 October 2014; revised manuscript received 16 January 2015; published online 25 March 2015)  The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company Interna-tional Rectifier IRGB14C40L are discussed.  Keywords: IGBT-transistors, Irradiation, Systems, Radioisotope.   PACS numbers: 00.05.Tp, 85.60.Jb    1. INTRODUCTION  Bipolar transistor with insulated gate (IGBT) – is a “workhorse” of modern power electronics. IGBT is a com-bination of functionally-integrated power semiconductor device and is classified as bipolar field devices and is de-signed to work in a key mode.  A combination of two devices in one structure allowed to combine together the advantages of bipolar and field transistors:  – Ease of operation of MOS transistors;  – Low conduction losses that typical of bipolar transis-tors.  Today IGBT-transistors are produced by dozens of companies (International Rectifier, Semikron, Infineon Technologies, ON Semiconductor, Fairchild Semiconduc-tor, Ixys, STMicroelectronics, Mitsubishi and others.).  Working to improve the IGBT transistor intensive course and scope of these devices is expanding rapidly.  The main field of application of these transistors – is frequency control of asynchronous electric drives designed for automatic frequency control of a broad class of ma-chines and mechanisms in various fields utilities, indus-trial and special production: pumps, fans, compressors, drive, conveyors, hoists, centrifuges, saws and others. Frequency selection control in electric is determined by the dynamic losses IGBT transistors with increasing fre-quency the power loss increases when switching and the crystal is heated above the allowable temperature. In this regard, the developers of IGBT transistors understand a problem to minimize as far as possible the dynamic power losses which are determined mainly by the time off.  Congenital defect of IGBT transistor is the presence of the “tail” of the residual collector current when turning off the transistor due to the finite lifetime of the minority carriers in the base of the power transistor p-n-p. When the collector current decreases large power loss occurs due to the fact that the IGBT transistor at this time has a relatively high voltage. Therefore it is extremely im-portant to reduce the length of the “tail” of the collector current. Since the IGBT transistor is off with a broken base, then speeding up the turn-off time schematics meth-ods cannot be achieved [1-4]. Continuous improvement of designs and IGBT technology have led to the creation of transistors with operating frequencies of 100 kHz or more.  To reduce the lifetime of minority carriers in the n-region and to improve the performance of devices irra-diation with high-energy particles was used.  A number of foreign companies (e.g. "Mitsubishi", etc.) uses the method of proton irradiation, allowing without change in the lifetime of the charge carriers in the bulk of the epitaxial n-layer locally to reduce its buffer n+ layer [5]. This allows increasing the speed of devices at relatively low voltage collector-emitter satu-ration. This technology, firstly, require expensive equipment, and secondly, it leads to doping of the n-region by shallow donors (hydrogen), which at integral large flows may reduce the breakdown voltage of the device. A much more efficient and economical result is the usage of radiation processes using high-energy elec-trons. Advantages of this type of radiation treatment following [6-8]:  – High uniformity generation of primary displace-ments in the entire volume of the crystals and struc-tures;  – No significant displacement cascade processes of formed areas of disorder;  – Complete absence of induced radioactivity and the introduction of additional chemical contaminants through photonuclear reactions;  – The speed of the process;  – Ease of use and ease of electron accelerators, the ability to handle large batches of structures without vacuum (in the air), the low cost and high efficiency of the process of radiation treatment.  2. EXPERIMENTAL PROCEDURES  The testing IGBT transistors of the company Inter-national Rectifier type IRGB14C40L were irradiated with high-energy electrons with E  6 MeV in the range of the integral fluxes F  (1-20)1014 cm – 2. During irradiation the test IGBT transistor it is a significant reduction in the time off, due to the decrease of the lifetime of minority carriers in the base of the power n- vertical p-n-p transistor due to the introduction of deep radiation centers of different physical nature.  The processed averaged (10 samples) results of measurements off time for the IGBT transistor IRGB14C40L at various integrated fluxes of high-energy electrons are shown in Fig. 1.   V.N. MURASHEV, M.P. KONOVALOV, ET AL. J. NANO- ELECTRON. PHYS. 7, 01011 (2015)   01011-2   Fig. 1 – The dependence of the turn-off time of the IGBT IRGB14C40L ion integral flux of electrons   Due to the unavailability of basic n-region it was not possible to get X-ray diffraction structure spectra to determine the electrophysical parameters prevailing in her radiation centers. However, based on published data, as well as some experimental work in the nature of the radiation centers of the n-silicon [6-7], we can conclude that, apparently, they are centers (VP), (CVO), (VV) and others involving vacancies and resid-ual impurities (oxygen, carbon).  Along with a reduction in off time and increasing op-erating frequency during irradiation it is deterioration (increase) in the main static parameter IGBT transis-tors - voltage collector-emitter saturation. The depend-ence of the saturation voltage collector-emitter of the IGBT IRGB14C40L RTP modes is shown in Fig. 2.    Fig. 2 – The dependence of the saturation voltage for collector-emitter voltage of the IGBT IRGB14C40L integral flux of elec-trons  In general, the value of the voltage collector-emitter saturation in the IGBT transistor is determined by the following components: the bias voltage of the collector p-n junction (it is usually 0.70.9 B, at which there is a noticeable hole injection from the p+ collector), the vol-tage drop across the resistance modulating n- base and voltage drop across the MOSFET structure.  The magnitude of the voltage drop across the MOS structure is determined by the resistance of the channel MOS structure and resistance low modulated area be-tween MOS elements of cells.  Upon irradiation of IGBT transistors it is compen-sated the main dopant in the p-layer and the n-epitaxial layer radiative centers, resulting in an increased resis-tivity of these areas, which leads to an increase in the voltage drop in these regions. The main contribution to the increase in voltage collector-emitter saturation volt-age drop makes for a sufficiently thick epitaxial n-layer. IGBT control part is a field effect transistor with an induced n-channel. Unlike bipolar devices operating on the principles of current-carrying minority carriers and changing parameters under irradiation mainly due to the introduction of deep radiation centers in the volume of the device structure, MOS devices operate on the principle of current transport by the majority carriers in the surface layer of the silicon and the mechanism of degradation of their parameters, the main of which is the threshold voltage of the gate-emitter, under the irradiation is mostly superficial “charge” in nature.  Range in the threshold gate-emitter voltage (de-crease) of IGBT transistors during irradiation with high-energy electrons is mainly due to the accumulation of positive charge in the dielectric volume and an in-crease in the density of surface states at the Si-SiO2. This contributes to the induction of electrons in the channel of the device at lower gate voltages. Depend-ence of the threshold voltage of the gate-emitter investi-gated the IGBT depending on the integral flux of elec-trons is shown in Fig. 3.    Fig. 3 – The dependence of the threshold voltage of the gate-emitter voltage of the IGBT IRGB14C40L on integral flux of electrons  3. RESULTS AND DISCUSSION   One of the most important characteristics of the IGBT transistor, used in power converter circuits,  is the ability to block high voltages. In order to exploit the IGBT transistor live off, the shutter must be closed to the emitter. This prevents surface inversion layer formed under the gate. When voltage is applied to the collector, IGBT transistor can withstand a lot of stress, because the transition p-n- becomes reverse biased. The depletion layer extends from the transition in both di-rections. Thus space charge region (SCR) p-layer should not interlock with the n + emitter region, and in n-layer - a p+ collector region.   INVESTIGATION OF THE IRRADIATION INFLUENCE… J. NANO- ELECTRON. PHYS. 7, 01011 (2015)   01011-3 When the boundary SCR, passing through n-layer reaches the high doped n+ buffer layer further extension of the SCR becomes impossible, begins to grow, the electric field in the n-layer and can occur avalanche breakdown. The permissible operating voltage of IGBT transistor (not leading to a breakdown) determined by the size of n-drift layer and its doping. Thus, by varying the concentration of the dopant in this layer, it is possible to control the value of the breakdown voltage. When radiation treatment by compensating dopant layer n- administered radiation centers the electrical resistivity of the area increases and, consequently, the breakdown voltage. The dependence of the breakdown voltage of the col-lector-emitter investigated the IGBT depending on the integral flux of electrons is shown in Fig. 4. From this dependence it is seen that irradiation of the breakdown voltage of the collector-emitter voltage increases on av-erage by 15 %.    Fig. 3 – The dependence of the breakdown voltage of the collector-emitter voltage of the IGBT IRGB14C40L on integral flux of electrons The experimental results to change the main static and dynamic parameters of the IGBT IRGB14C40L by irradiation with high-energy electrons allow to conclude that the use of the radiation method allows efficiently to manage the electrical characteristics of the transistors of this type, to get the optimal combination of static and dynamic parameters, depending on the requirements of development of electronic equipment. Operation of irradiation with high-energy electrons should be carried out directly in the manufacturing process flow of IGBT transistor. After, radiation (before putting in a crystal coverage) it is necessary to carry out thermal annealing for adging unstable radiation centers and to provide the optimal balance between time off and voltage collector-emitter saturation. To select the optimal mode of operation of the radia-tion process (irradiation and subsequent thermal an-nealing) to obtain the best combination of complex elec-trical parameters of the IGBT it is necessary to analyze the power dissipation for operating the IGBT transistor under operating conditions (optimal regimes will be those that provide a minimum power dissipation).  4. SUMMARY   Optimal modes of radiation process will provide a more comfortable mode of IGBT by the minimum value (compared to the original device) power dissipation and a significant improvement in a number of electrical parameters with a slight increase of static parameters that determine the direct loss.  AKNOWLEDGEMENTS  This study was supported by the Federal Targeted Program “The development of electronic component base and radio electronics” for 2008-2015, state contract № 14.429.11.0003.    REFERENCES  1. B.J. Baliga, Modern Power Devices (New York: John Wiley  Sons, Inc.: 1987). 2. V.V. Tokareva, Power semiconductor devices (Voronezch Elist: 1995). 3. B.J. Baliga, Fundamentals of Power Semiconductor Devic-es (Springer Science + Business Media: 2008). 4. P.A. Voronin, Power semiconductor solid state switch (M.: Dodeka: 2001). 5. D. Pavlyk, Power Electronics, 4 (2004). 6. E.A. Ladygin, A.V. Panichkin, N.N. Gorunov, Basis of irradiation technology (М.: MISA: 1994). 7. E.A. Ladygin, Ensuring the reliability of spacecraft elec-tronic components (М.: MISA: 2003).  

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

SocioEconomic Challenges Journal (Sumy State University)

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ 
Vol. 7 No 1, 01011(3pp) (2015) Том 7 № 1, 01011(3cc) (2015) 
 
 
2077-6772/2015/7(1)01011(3) 01011-1  2015 Sumy State University 
Investigation of the Irradiation Influence with High-energy Electrons 
on the Electrical Parameters of the IGBT-transistors 
 
V.N. Murashev, M.P. Konovalov, S.A. Legotin, S.I. Didenko, O.I. Rabinovich,  
A.A. Krasnov, K.A. Кuzmina 
 
National University of Science and Technology 'MISiS'  “Moscow Institute of Steel and Alloys”,  
4, Leninskiy prosp., 119040 Moscow, Russian Federation 
 
(Received 15 October 2014; revised manuscript received 16 January 2015; published online 25 March 2015) 
 
The results of studies of the effectiveness of the radiation method for control the characteristics of the 
IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons 
with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company Interna-
tional Rectifier IRGB14C40L are discussed. 
 
Keywords: IGBT-transistors, Irradiation, Systems, Radioisotope. 
 
 PACS numbers: 00.05.Tp, 85.60.Jb  
 
 
1. INTRODUCTION 
 
Bipolar transistor with insulated gate (IGBT) – is a 
“workhorse” of modern power electronics. IGBT is a com-
bination of functionally-integrated power semiconductor 
device and is classified as bipolar field devices and is de-
signed to work in a key mode.  
A combination of two devices in one structure allowed 
to combine together the advantages of bipolar and field 
transistors:  
– Ease of operation of MOS transistors;  
– Low conduction losses that typical of bipolar transis-
tors.  
Today IGBT-transistors are produced by dozens of 
companies (International Rectifier, Semikron, Infineon 
Technologies, ON Semiconductor, Fairchild Semiconduc-
tor, Ixys, STMicroelectronics, Mitsubishi and others.).  
Working to improve the IGBT transistor intensive 
course and scope of these devices is expanding rapidly.  
The main field of application of these transistors – is 
frequency control of asynchronous electric drives designed 
for automatic frequency control of a broad class of ma-
chines and mechanisms in various fields utilities, indus-
trial and special production: pumps, fans, compressors, 
drive, conveyors, hoists, centrifuges, saws and others. 
Frequency selection control in electric is determined by 
the dynamic losses IGBT transistors with increasing fre-
quency the power loss increases when switching and the 
crystal is heated above the allowable temperature. In this 
regard, the developers of IGBT transistors understand a 
problem to minimize as far as possible the dynamic power 
losses which are determined mainly by the time off.  
Congenital defect of IGBT transistor is the presence of 
the “tail” of the residual collector current when turning off 
the transistor due to the finite lifetime of the minority 
carriers in the base of the power transistor p-n-p. When 
the collector current decreases large power loss occurs due 
to the fact that the IGBT transistor at this time has a 
relatively high voltage. Therefore it is extremely im-
portant to reduce the length of the “tail” of the collector 
current. Since the IGBT transistor is off with a broken 
base, then speeding up the turn-off time schematics meth-
ods cannot be achieved [1-4]. Continuous improvement of 
designs and IGBT technology have led to the creation of 
transistors with operating frequencies of 100 kHz or more.  
To reduce the lifetime of minority carriers in the n-
region and to improve the performance of devices irra-
diation with high-energy particles was used.  
A number of foreign companies (e.g. "Mitsubishi", 
etc.) uses the method of proton irradiation, allowing 
without change in the lifetime of the charge carriers in 
the bulk of the epitaxial n-layer locally to reduce its 
buffer n+ layer [5]. This allows increasing the speed of 
devices at relatively low voltage collector-emitter satu-
ration. This technology, firstly, require expensive 
equipment, and secondly, it leads to doping of the n-
region by shallow donors (hydrogen), which at integral 
large flows may reduce the breakdown voltage of the 
device. A much more efficient and economical result is 
the usage of radiation processes using high-energy elec-
trons. Advantages of this type of radiation treatment 
following [6-8]:  
– High uniformity generation of primary displace-
ments in the entire volume of the crystals and struc-
tures;  
– No significant displacement cascade processes of 
formed areas of disorder;  
– Complete absence of induced radioactivity and the 
introduction of additional chemical contaminants 
through photonuclear reactions;  
– The speed of the process;  
– Ease of use and ease of electron accelerators, the 
ability to handle large batches of structures without 
vacuum (in the air), the low cost and high efficiency of 
the process of radiation treatment. 
 
2. EXPERIMENTAL PROCEDURES 
 
The testing IGBT transistors of the company Inter-
national Rectifier type IRGB14C40L were irradiated 
with high-energy electrons with E  6 MeV in the range 
of the integral fluxes F  (1-20)1014 cm – 2. 
During irradiation the test IGBT transistor it is a 
significant reduction in the time off, due to the decrease 
of the lifetime of minority carriers in the base of the 
power n- vertical p-n-p transistor due to the introduction 
of deep radiation centers of different physical nature.  
The processed averaged (10 samples) results of 
measurements off time for the IGBT transistor 
IRGB14C40L at various integrated fluxes of high-
energy electrons are shown in Fig. 1. 
 
 V.N. MURASHEV, M.P. KONOVALOV, ET AL. J. NANO- ELECTRON. PHYS. 7, 01011 (2015) 
 
 
01011-2 
 
 
Fig. 1 – The dependence of the turn-off time of the IGBT 
IRGB14C40L ion integral flux of electrons  
 
Due to the unavailability of basic n-region it was not 
possible to get X-ray diffraction structure spectra to 
determine the electrophysical parameters prevailing in 
her radiation centers. However, based on published 
data, as well as some experimental work in the nature 
of the radiation centers of the n-silicon [6-7], we can 
conclude that, apparently, they are centers (VP), 
(CVO), (VV) and others involving vacancies and resid-
ual impurities (oxygen, carbon).  
Along with a reduction in off time and increasing op-
erating frequency during irradiation it is deterioration 
(increase) in the main static parameter IGBT transis-
tors - voltage collector-emitter saturation. The depend-
ence of the saturation voltage collector-emitter of the 
IGBT IRGB14C40L RTP modes is shown in Fig. 2. 
 
 
 
Fig. 2 – The dependence of the saturation voltage for collector-
emitter voltage of the IGBT IRGB14C40L integral flux of elec-
trons 
 
In general, the value of the voltage collector-emitter 
saturation in the IGBT transistor is determined by the 
following components: the bias voltage of the collector p-n 
junction (it is usually 0.70.9 B, at which there is a 
noticeable hole injection from the p+ collector), the vol-
tage drop across the resistance modulating n- base and 
voltage drop across the MOSFET structure.  
The magnitude of the voltage drop across the MOS 
structure is determined by the resistance of the channel 
MOS structure and resistance low modulated area be-
tween MOS elements of cells.  
Upon irradiation of IGBT transistors it is compen-
sated the main dopant in the p-layer and the n-epitaxial 
layer radiative centers, resulting in an increased resis-
tivity of these areas, which leads to an increase in the 
voltage drop in these regions. The main contribution to 
the increase in voltage collector-emitter saturation volt-
age drop makes for a sufficiently thick epitaxial n-layer. 
IGBT control part is a field effect transistor with an 
induced n-channel. Unlike bipolar devices operating on 
the principles of current-carrying minority carriers and 
changing parameters under irradiation mainly due to 
the introduction of deep radiation centers in the volume 
of the device structure, MOS devices operate on the 
principle of current transport by the majority carriers in 
the surface layer of the silicon and the mechanism of 
degradation of their parameters, the main of which is 
the threshold voltage of the gate-emitter, under the 
irradiation is mostly superficial “charge” in nature.  
Range in the threshold gate-emitter voltage (de-
crease) of IGBT transistors during irradiation with 
high-energy electrons is mainly due to the accumulation 
of positive charge in the dielectric volume and an in-
crease in the density of surface states at the Si-SiO2. 
This contributes to the induction of electrons in the 
channel of the device at lower gate voltages. Depend-
ence of the threshold voltage of the gate-emitter investi-
gated the IGBT depending on the integral flux of elec-
trons is shown in Fig. 3. 
 
 
 
Fig. 3 – The dependence of the threshold voltage of the gate-
emitter voltage of the IGBT IRGB14C40L on integral flux of 
electrons 
 
3. RESULTS AND DISCUSSION  
 
One of the most important characteristics of the 
IGBT transistor, used in power converter circuits,  is the 
ability to block high voltages. In order to exploit the 
IGBT transistor live off, the shutter must be closed to 
the emitter. This prevents surface inversion layer 
formed under the gate. When voltage is applied to the 
collector, IGBT transistor can withstand a lot of stress, 
because the transition p-n- becomes reverse biased. The 
depletion layer extends from the transition in both di-
rections. Thus space charge region (SCR) p-layer should 
not interlock with the n + emitter region, and in n-layer 
- a p+ collector region. 
 
 INVESTIGATION OF THE IRRADIATION INFLUENCE… J. NANO- ELECTRON. PHYS. 7, 01011 (2015) 
 
 
01011-3 
When the boundary SCR, passing through n-layer 
reaches the high doped n+ buffer layer further extension of 
the SCR becomes impossible, begins to grow, the electric 
field in the n-layer and can occur avalanche breakdown. 
The permissible operating voltage of IGBT transistor (not 
leading to a breakdown) determined by the size of n-drift 
layer and its doping. Thus, by varying the concentration of 
the dopant in this layer, it is possible to control the value 
of the breakdown voltage. When radiation treatment by 
compensating dopant layer n- administered radiation 
centers the electrical resistivity of the area increases and, 
consequently, the breakdown voltage. 
The dependence of the breakdown voltage of the col-
lector-emitter investigated the IGBT depending on the 
integral flux of electrons is shown in Fig. 4. From this 
dependence it is seen that irradiation of the breakdown 
voltage of the collector-emitter voltage increases on av-
erage by 15 %. 
 
 
 
Fig. 3 – The dependence of the breakdown voltage of the 
collector-emitter voltage of the IGBT IRGB14C40L on integral 
flux of electrons 
The experimental results to change the main static 
and dynamic parameters of the IGBT IRGB14C40L by 
irradiation with high-energy electrons allow to conclude 
that the use of the radiation method allows efficiently to 
manage the electrical characteristics of the transistors 
of this type, to get the optimal combination of static and 
dynamic parameters, depending on the requirements of 
development of electronic equipment. 
Operation of irradiation with high-energy electrons 
should be carried out directly in the manufacturing 
process flow of IGBT transistor. After, radiation (before 
putting in a crystal coverage) it is necessary to carry out 
thermal annealing for adging unstable radiation centers 
and to provide the optimal balance between time off and 
voltage collector-emitter saturation. 
To select the optimal mode of operation of the radia-
tion process (irradiation and subsequent thermal an-
nealing) to obtain the best combination of complex elec-
trical parameters of the IGBT it is necessary to analyze 
the power dissipation for operating the IGBT transistor 
under operating conditions (optimal regimes will be 
those that provide a minimum power dissipation). 
 
4. SUMMARY  
 
Optimal modes of radiation process will provide a 
more comfortable mode of IGBT by the minimum value 
(compared to the original device) power dissipation and 
a significant improvement in a number of electrical 
parameters with a slight increase of static parameters 
that determine the direct loss. 
 
AKNOWLEDGEMENTS 
 
This study was supported by the Federal Targeted 
Program “The development of electronic component 
base and radio electronics” for 2008-2015, state contract 
№ 14.429.11.0003. 
 
 
 
REFERENCES 
 
1. B.J. Baliga, Modern Power Devices (New York: John Wiley 
 Sons, Inc.: 1987). 
2. V.V. Tokareva, Power semiconductor devices (Voronezch 
Elist: 1995). 
3. B.J. Baliga, Fundamentals of Power Semiconductor Devic-
es (Springer Science + Business Media: 2008). 
4. P.A. Voronin, Power semiconductor solid state switch 
(M.: Dodeka: 2001). 
5. D. Pavlyk, Power Electronics, 4 (2004). 
6. E.A. Ladygin, A.V. Panichkin, N.N. Gorunov, Basis of 
irradiation technology (М.: MISA: 1994). 
7. E.A. Ladygin, Ensuring the reliability of spacecraft elec-
tronic components (М.: MISA: 2003). 
 


English

https://essuir.sumdu.edu.ua/bitstream/123456789/39054/1/Murashev_Konovalov.pdf

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

Abstract

Similar works

Full text

Available Versions

Electronic Sumy State University Institutional Repository

SocioEconomic Challenges Journal (Sumy State University)