499 research outputs found
Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba[0.8]Sr[0.2]TiO[3] Thin Films
The thickness dependent of electrical and piezoelectric properties of lead-free ferroelectric Ba[0.8]Sr[0.2]TiO[3] thin films is reported. Ba[0.8]Sr[0.2]TiO[3] (BST 80/20) thin films for various thickness, ranging from 150 nm to 550 nm, were prepared by high-frequency reactive sputtering of a ceramic target in an oxygen atmosphere on p-type Si substrate. Memory windows and effective dielectric constant of the BST film
in Au/BST/Si thin film capacitors is found to increase with the increasing thickness of the film. Domain structure, domain switching and hysteresis loops of the BST 80/20 thin film were investigate via the piezoresponse force microscopy. Complete domain switching and strong piezoresponse are found in the ferroelectric BST film. The piezoelectric coefficient and the remnant piezoelectric response (ΔPR) of BST
80/20 films is found to increase with the thickness of the fil
Anisotropic transport in the two-dimensional electron gas in the presence of spin-orbit coupling
In a two-dimensional electron gas as realized by a semiconductor quantum
well, the presence of spin-orbit coupling of both the Rashba and Dresselhaus
type leads to anisotropic dispersion relations and Fermi contours. We study the
effect of this anisotropy on the electrical conductivity in the presence of
fixed impurity scatterers. The conductivity also shows in general an anisotropy
which can be tuned by varying the Rashba coefficient. This effect provides a
method of detecting and investigating spin-orbit coupling by measuring
spin-unpolarized electrical currents in the diffusive regime. Our approach is
based on an exact solution of the two-dimensional Boltzmann equation and
provides also a natural framework for investigating other transport effects
including the anomalous Hall effect.Comment: 10 pages, 1 figure included. Discussion of experimental impact
enlarged; error in calculation of conductivity contribution corrected (cf.
Eq. (A14)), no changes in qualitative results and physical consequence
High statistic measurement of the K- -> pi0 e- nu decay form-factors
The decay K- -> pi0 e- nu is studied using in-flight decays detected with the
ISTRA+ spectrometer. About 920K events are collected for the analysis. The
lambda+ slope parameter of the decay form-factor f+(t) in the linear
approximation (average slope) is measured: lambda+(lin)= 0.02774 +-
0.00047(stat) +- 0.00032(syst). The quadratic contribution to the form-factor
was estimated to be lambda'+ = 0.00084 +- 0.00027(stat) +- 0.00031(syst). The
linear slope, which has a meaning of df+(t)/dt|_{t=0} for this fit, is lambda+
= 0.02324 +- 0.00152(stat) +- 0.00032(syst). The limits on possible tensor and
scalar couplings are derived: f_{T}/f_{+}(0)=-0.012 +- 0.021(stat) +-
0.011$(syst), f_{S}/f_{+}(0)=-0.0037^{+0.0066}_{-0.0056}(stat) +- 0.0041(syst).Comment: 11 pages, 8 figures. Accepted by Phys.Lett.
Tight-binding g-Factor Calculations of CdSe Nanostructures
The Lande g-factors for CdSe quantum dots and rods are investigated within
the framework of the semiempirical tight-binding method. We describe methods
for treating both the n-doped and neutral nanostructures, and then apply these
to a selection of nanocrystals of variable size and shape, focusing on
approximately spherical dots and rods of differing aspect ratio. For the
negatively charged n-doped systems, we observe that the g-factors for
near-spherical CdSe dots are approximately independent of size, but show strong
shape dependence as one axis of the quantum dot is extended to form rod-like
structures. In particular, there is a discontinuity in the magnitude of
g-factor and a transition from anisotropic to isotropic g-factor tensor at
aspect ratio ~1.3. For the neutral systems, we analyze the electron g-factor of
both the conduction and valence band electrons. We find that the behavior of
the electron g-factor in the neutral nanocrystals is generally similar to that
in the n-doped case, showing the same strong shape dependence and discontinuity
in magnitude and anisotropy. In smaller systems the g-factor value is dependent
on the details of the surface model. Comparison with recent measurements of
g-factors for CdSe nanocrystals suggests that the shape dependent transition
may be responsible for the observations of anomalous numbers of g-factors at
certain nanocrystal sizes.Comment: 15 pages, 6 figures. Fixed typos to match published versio
Nonlinear Modulation of Multi-Dimensional Lattice Waves
The equations governing weakly nonlinear modulations of -dimensional
lattices are considered using a quasi-discrete multiple-scale approach. It is
found that the evolution of a short wave packet for a lattice system with cubic
and quartic interatomic potentials is governed by generalized Davey-Stewartson
(GDS) equations, which include mean motion induced by the oscillatory wave
packet through cubic interatomic interaction. The GDS equations derived here
are more general than those known in the theory of water waves because of the
anisotropy inherent in lattices. Generalized Kadomtsev-Petviashvili equations
describing the evolution of long wavelength acoustic modes in two and three
dimensional lattices are also presented. Then the modulational instability of a
-dimensional Stokes lattice wave is discussed based on the -dimensional
GDS equations obtained. Finally, the one- and two-soliton solutions of
two-dimensional GDS equations are provided by means of Hirota's bilinear
transformation method.Comment: Submitted to PR
An Equation of State of a Carbon-Fibre Epoxy Composite under Shock Loading
An anisotropic equation of state (EOS) is proposed for the accurate
extrapolation of high-pressure shock Hugoniot (anisotropic and isotropic)
states to other thermodynamic (anisotropic and isotropic) states for a shocked
carbon-fibre epoxy composite (CFC) of any symmetry. The proposed EOS, using a
generalised decomposition of a stress tensor [Int. J. Plasticity \textbf{24},
140 (2008)], represents a mathematical and physical generalisation of the
Mie-Gr\"{u}neisen EOS for isotropic material and reduces to this equation in
the limit of isotropy. Although a linear relation between the generalised
anisotropic bulk shock velocity and particle velocity was
adequate in the through-thickness orientation, damage softening process
produces discontinuities both in value and slope in the -
relation. Therefore, the two-wave structure (non-linear anisotropic and
isotropic elastic waves) that accompanies damage softening process was proposed
for describing CFC behaviour under shock loading. The linear relationship
- over the range of measurements corresponding to non-linear
anisotropic elastic wave shows a value of (the intercept of the
- curve) that is in the range between first and second
generalised anisotropic bulk speed of sound [Eur. Phys. J. B \textbf{64}, 159
(2008)]. An analytical calculation showed that Hugoniot Stress Levels (HELs) in
different directions for a CFC composite subject to the two-wave structure
(non-linear anisotropic elastic and isotropic elastic waves) agree with
experimental measurements at low and at high shock intensities. The results are
presented, discussed and future studies are outlined.Comment: 12 pages, 9 figure
Mesoscopic Stern-Gerlach device to polarize spin currents
Spin preparation and spin detection are fundamental problems in spintronics
and in several solid state proposals for quantum information processing. Here
we propose the mesoscopic equivalent of an optical polarizing beam splitter
(PBS). This interferometric device uses non-dispersive phases (Aharonov-Bohm
and Rashba) in order to separate spin up and spin down carriers into distinct
outputs and thus it is analogous to a Stern-Gerlach apparatus. It can be used
both as a spin preparation device and as a spin measuring device by converting
spin into charge (orbital) degrees of freedom. An important feature of the
proposed spin polarizer is that no ferromagnetic contacts are used.Comment: Updated to the published versio
Spin relaxation: From 2D to 1D
In inversion asymmetric semiconductors, spin-orbit interactions give rise to
very effective relaxation mechanisms of the electron spin. Recent work, based
on the dimensionally constrained D'yakonov Perel' mechanism, describes
increasing electron-spin relaxation times for two-dimensional conducting layers
with decreasing channel width. The slow-down of the spin relaxation can be
understood as a precursor of the one-dimensional limit
Two-dimensional hole precession in an all-semiconductor spin field effect transistor
We present a theoretical study of a spin field-effect transistor realized in
a quantum well formed in a p--doped ferromagnetic-semiconductor-
nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based
on an envelope-function approach for the hole bands in the various regions of
the transistor, we derive the complete theory of coherent transport through the
device, which includes both heavy- and light-hole subbands, proper modeling of
the mode matching at interfaces, integration over injection angles, Rashba spin
precession, interference effects due to multiple reflections, and gate-voltage
dependences. Numerical results for the device current as a function of
externally tunable parameters are in excellent agreement with approximate
analytical formulae.Comment: 9 pages, 11 figure
Auger decay of degenerate and Bose-condensed excitons in CuO
We study the non-radiative Auger decay of excitons in CuO, in which two
excitons scatter to an excited electron and hole. The exciton decay rate for
the direct and the phonon-assisted processes is calculated from first
principles; incorporating the band structure of the material leads to a
relatively shorter lifetime of the triplet state ortho excitons. We compare our
results with the Auger decay rate extracted from data on highly degenerate
triplet excitons and Bose-condensed singlet excitons in CuO.Comment: 15 pages, revtex, figures available from G. Kavoulaki
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