118 research outputs found
Reliability of AC thick-film electroluminescent lamps
The reliability of AC thick-film EL devices has been studied. The AC thickfilm
EL devices were fabricated by Novatech Inc. using the industrial print screen
technology. The analysis of reasons for failure has been proposed. The dependence of EL
lamp parameters on physical properties of the device EL layers was found. Our analysis
of the breakdown spot showed that improvement of reliability can be reached using the
additional dielectric layer between the phosphor layer and transparent electrode, high
concentration of phosphor powder 70 % and binder 30 %, balanced resistance between
the electric circuit and EL lamp. The thickness of the phosphor layer was equal to H =
(1 + √3/2)D (hexagonal packing), where D is the mean diameter of phosphor particles.
The reliability dependence of EL lamp on a water adsorption property of packaging
material was revealed
Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics
The role of elastic defects on the kinetics of 180-degree uncharged
ferroelectric domain wall motion is explored using continuum time-dependent LGD
equation with elastic dipole coupling. In one dimensional case, ripples, steps
and oscillations of the domain wall velocity appear due to the wall-defect
interactions. While the defects do not affect the limiting-wall velocity vs.
field dependence, they result in the minimal threshold field required to
activate the wall motions. The analytical expressions for the threshold field
are derived and the latter is shown to be much smaller than the thermodynamic
coercive field. The threshold field is linearly proportional to the
concentration of defects and non-monotonically depends on the average distance
between them. The obtained results provide the insight into the mesoscopic
mechanism of the domain wall pinning by elastic defects in ferroelectrics.Comment: 18 pages, 6 figures, 1 appendi
Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium
distributions of electric field, polarization and space charge in the
ferroelectric-semiconductor heterostructures containing proper or incipient
ferroelectric thin films. The role of the polarization gradient and intrinsic
surface energy, interface dipoles and free charges on polarization dynamics are
specifically explored. The intrinsic field effects, which originated at the
ferroelectric-semiconductor interface, lead to the surface band bending and
result into the formation of depletion space-charge layer near the
semiconductor surface. During the local polarization reversal (caused by the
inhomogeneous electric field induced by the nanosized tip of the Scanning Probe
Microscope (SPM) probe) the thickness and charge of the interface layer
drastically changes, it particular the sign of the screening carriers is
determined by the polarization direction. Obtained analytical solutions could
be extended to analyze polarization-mediated electronic transport.Comment: 35 pages, 12 figures, 1 table, 2 appendices, to be submitted to Phys.
Rev.
Domain wall conduction in multiaxial ferroelectrics
The conductance of domain wall structures consisting of either stripes or
cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed.
The effects of the domain size, wall tilt and curvature, on charge
accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory
for polarization combined with Poisson equation for charge distributions. Both
the classical ferroelectric parameters including expansion coefficients in
2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling,
inhomogeneous elastic strains and electrostriction are included in the present
analysis. Spatial distributions of the ionized donors, free electrons and holes
were found self-consistently using the effective mass approximation for the
respective densities of states. The proximity and size effect of the electron
and donor accumulation/depletion by thin stripe domains and cylindrical
nanodomains are revealed. In contrast to thick domain stripes and thicker
cylindrical domains, in which the carrier accumulation (and so the static
conductivity) sharply increases at the domain walls only, small nanodomains of
radius less then 5-10 correlation length appeared conducting across entire
cross-section. Implications of such conductive nanosized channels may be
promising for nanoelectronics.Comment: 39 pages, 11 figures, 3 tables, 4 appendice
Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach
Thermodynamics of tip-induced nanodomain formation in scanning probe
microscopy of ferroelectric films and crystals is studied using the
Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution
of polarization induced by the biased probe apex is analyzed including the
effects of polarization gradients, field dependence of dielectric properties,
intrinsic domain wall width, and film thickness. The polarization distribution
inside subcritical nucleus of the domain preceding the nucleation event is very
smooth and localized below the probe, and the electrostatic field distribution
is dominated by the tip. In contrast, polarization distribution inside the
stable domain is rectangular-like, and the associated electrostatic fields
clearly illustrate the presence of tip-induced and depolarization field
components. The calculated coercive biases of domain formation are in a good
agreement with available experimental results for typical ferroelectric
materials. The microscopic origin of the observed domain tip elongation in the
region where the probe electric field is much smaller than the intrinsic
coercive field is the positive depolarization field in front of the moving
counter domain wall. For infinitely thin domain walls local domain breakdown
through the sample depth appears. The results obtained here are complementary
to the Landauer-Molotskii energetic approach.Comment: 35 pages, 8 figures, suplementary attached, to be submitted to Phys.
Rev.
Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors
Using Landau-Ginzburg-Devonshire theory we calculated numerically the static
conductivity of both inclined and counter domain walls in the uniaxial
ferroelectrics-semiconductors of n-type. We used the effective mass
approximation for the electron and holes density of states, which is valid at
arbitrary distance from the domain wall. Due to the electrons accumulation, the
static conductivity drastically increases at the inclined head-to-head wall by
1 order of magnitude for small incline angles theta pi/40 by up 3 orders of
magnitude for the counter domain wall (theta=pi/2). Two separate regions of the
space charge accumulation exist across an inclined tail-to-tail wall: the thin
region in the immediate vicinity of the wall with accumulated mobile holes and
the much wider region with ionized donors. The conductivity across the
tail-to-tail wall is at least an order of magnitude smaller than the one of the
head-to-head wall due to the low mobility of holes, which are improper carries.
The results are in qualitative agreement with recent experimental data for
LiNbO3 doped with MgO.Comment: 20 pages, 6 figures, 1 appendi
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, N 2. P. 78-83
Abstract. The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, which allowed us to determine the activation energies and the reaction type. The investigations of the structure and surface morphology of films were carried out. The technological conditions are determined providing the fabrication of single-phase SmS films of cubic modification with the most ordered crystal structure
Forest legislation of Peter the great: traditions and innovations
Summing up the overall result of Peter's activities in the field of forest legislation and forest protection, we quote the words of V.V. Chernykh: "Despite the complexity and inconsistency of regulatory legal acts, Peter's law-making played an important role in the development of forest protection legislation. Some of them were included in the Forest Charter of the Empire, adopted in 1802, and in other regulatory legal documents that operated on the territory of the Russian state
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