Steering effects on growth instability during step-flow growth of Cu on Cu(1,1,17)

Kinetic Monte Carlo simulation in conjunction with molecular dynamics simulation is utilized to study the effect of the steered deposition on the growth of Cu on Cu(1,1,17). It is found that the deposition flux becomes inhomogeneous in step train direction and the inhomogeneity depends on the deposition angle, when the deposition is made along that direction. Steering effect is found to always increase the growth instability, with respect to the case of homogeneous deposition. Further, the growth instability depends on the deposition angle and direction, showing minimum at a certain deposition angle off-normal to (001) terrace, and shows a strong correlation with the inhomogeneous deposition flux. The increase of the growth instability is ascribed to the strengthened step Erlich Schwoebel barrier effects that is caused by the enhanced deposition flux near descending step edge due to the steering effect.Comment: 5 page

d0 Ferromagnetic Interface Between Non-magnetic Perovskites

We use computational and experimental methods to study d0 ferromagnetism at a charge- imbalanced interface between two perovskites. In SrTiO3/KTaO3 superlattice calculations, the charge imbalance introduces holes in the SrTiO3 layer, inducing a d0 ferromagnetic half-metallic 2D electron gas at the interface oxygen 2p orbitals. The charge imbalance overrides doping by vacancies at realistic concentrations. Varying the constituent materials shows ferromagnetism to be a gen- eral property of hole-type d0 perovskite interfaces. Atomically sharp epitaxial d0 SrTiO3/KTaO3, SrTiO3 /KNbO3 and SrTiO3 /NaNbO3 interfaces are found to exhibit ferromagnetic hysteresis at room temperature. We suggest the behavior is due to high density of states and exchange coupling at the oxygen t1g band in comparison with the more studied d band t2g symmetry electron gas.Comment: 5 pages, 5 figure

Effects of deposition dynamics on epitaxial growth

The dynamic effects, such as the steering and the screening effects during deposition, on an epitaxial growth (Cu/Cu(001)), is studied by kinetic Monte Carlo simulation that incorporates molecular dynamic simulation to rigorously take the interaction of the deposited atom with the substrate atoms into account. We find three characteristic features of the surface morphology developed by grazing angle deposition: (1) enhanced surface roughness, (2) asymmetric mound, and (3) asymmetric slopes of mound sides. Regarding their dependence on both deposition angle and substrate temperature, a reasonable agreement of the simulated results with the previous experimental ones is found. The characteristic growth features by grazing angle deposition are mainly caused by the inhomogeneous deposition flux due to the steering and screening effects, where the steering effects play the major role rather than the screening effects. Newly observed in the present simulation is that the side of mound in each direction is composed of various facets instead of all being in one selected mound angle even if the slope selection is attained, and that the slope selection does not necessarily mean the facet selection.Comment: 9 pages, 10 figure

Vicinal Surfaces, Fractional Statistics and Universality

We propose that the phases of all vicinal surfaces can be characterized by four fixed lines, in the renormalization group sense, in a three-dimensional space of coupling constants. The observed configurations of several Si surfaces are consistent with this picture. One of these fixed lines also describes one-dimensional quantum particles with fractional exclusion statistics. The featureless steps of a vicinal surface can therefore be thought of as a realization of fractional-statistics particles, possibly with additional short-range interactions.Comment: 6 pages, revtex, 3 eps figures. To appear in Physical Review Letters. Reference list properly arranged. Caption of Fig. 1 slightly reworded. Fig 3 (in color) is not part of the paper. It complements Fig.

Quasiparticle dynamics in ferromagnetic compounds of the Co-Fe and Ni-Fe systems

We report a theoretical study of the quasiparticle lifetime and the quasiparticle mean free path caused by inelastic electron-electron scattering in ferromagnetic compounds of the Co-Fe and Ni-Fe systems. The study is based on spin-polarized calculations, which are performed within the $GW$ approximation for equiatomic and Co- and Ni-rich compounds, as well as for their constituents. We mainly focus on the spin asymmetry of the quasiparticle properties, which leads to the spin-filtering effect experimentally observed in spin-dependent transport of hot electrons and holes in the systems under study. By comparing with available experimental data on the attenuation length, we estimate the contribution of the inelastic mean free path to the latter.Comment: 10 pages, 10 figure

Opportunities and challenges for spintronics

This is the author accepted manuscript. The final version is available from EDP Sciences via the DOI in this recordConventional electronics use the flow of electric charges and are based on standard semiconductors. Spintronic devices exploit the electrons- spin to generate and control currents and to combine electric and magnetic signals. Today there is a strong effort worldwide to integrate spintronic devices with standard CMOS technology towards hybrid spin-CMOS chips, offering advantages in terms of power consumption, compactness, and speed. Recent results (from SAMSUNG [1], TSMC [2], etc.) confirm the merit of this approach

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Theory of spin-polarized bipolar transport in magnetic p-n junctions

The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table