Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Vacancy-type defects in Al0.1Ga0.9N were probed using a monoenergetic positron beam. Al0.1Ga0.9N layers with different carbon doping concentrations ([C] = 5 x 10(17) -8 x 10(19) cm(-3)) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al0.1Ga0.9N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C(N)s). The charge state of the vacancies was positive because of the electron transfer from the defects to C-N-related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C-N-related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C-N-related acceptors

The pumpistor: a linearized model of a flux-pumped SQUID for use as a negative-resistance parametric amplifier

We describe a circuit model for a flux-driven SQUID. This is useful for developing insight into how these devices perform as active elements in parametric amplifiers. The key concept is that frequency mixing in a flux-pumped SQUID allows for the appearance of an effective negative resistance. In the three-wave, degenerate case treated here, a negative resistance appears only over a certain range of allowed input signal phase. This model readily lends itself to testable predictions of more complicated circuits.Comment: 4 pages, 3 figure

Deep levels in silicon-oxygen superlattices

This work reports on the deep levels observed in Pt/Al2O3/p-type Si metal-oxide-semiconductor capacitors containing a silicon-oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as- deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance-Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P-b dangling bond centers at the Si/SiO2 interface has been observed as well

Characterization of a multimode coplanar waveguide parametric amplifier

We characterize a novel Josephson parametric amplifier based on a flux-tunable quarter-wavelength resonator. The fundamental resonance frequency is ~1GHz, but we use higher modes of the resonator for our measurements. An on-chip tuning line allows for magnetic flux pumping of the amplifier. We investigate and compare degenerate parametric amplification, involving a single mode, and nondegenerate parametric amplification, using a pair of modes. We show that we reach quantum-limited noise performance in both cases, and we show that the added noise can be less than 0.5 added photons in the case of low gain

Study of electrically active defects in epitaxial layers on silicon

Electrically active defects in silicon-based epitaxial layers on silicon substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). Several aspects have been investigated, like, the impact of the pre-epi cleaning conditions and the effect of a post-deposition anneal on the deep-level properties. It is shown that the pre-cleaning thermal budget has a strong influence on the defects at the substrate/epi layer interface. At the same time, a post-deposition Forming Gas Anneal can passivate to a large extent the active defect states. Finally, it is shown that application of a post-deposition anneal increases the out-diffusion of carbon from a Si:C stressor layer into the p-type CZ substrate

On the origin of the 1/f noise in shallow germanium p(+)-n junctions

The low-frequency noise of shallow germanium p(+)-n junctions is studied, for diodes with or without a nickel-germanide Ohmic contact. It is shown that the application of NiGe not only reduces the series resistance, resulting in a higher forward current, but also results in a lower 1/f noise at forward bias. From the observed geometry dependence, it is concluded that germanidation suppresses the 1/f noise generated in the series resistance, leaving surface-state-assisted generation-recombination at the junction perimeter as the dominant flicker noise source

Observation of the Dynamical Casimir Effect in a Superconducting Circuit

One of the most surprising predictions of modern quantum theory is that the vacuum of space is not empty. In fact, quantum theory predicts that it teems with virtual particles flitting in and out of existence. While initially a curiosity, it was quickly realized that these vacuum fluctuations had measurable consequences, for instance producing the Lamb shift of atomic spectra and modifying the magnetic moment for the electron. This type of renormalization due to vacuum fluctuations is now central to our understanding of nature. However, these effects provide indirect evidence for the existence of vacuum fluctuations. From early on, it was discussed if it might instead be possible to more directly observe the virtual particles that compose the quantum vacuum. 40 years ago, Moore suggested that a mirror undergoing relativistic motion could convert virtual photons into directly observable real photons. This effect was later named the dynamical Casimir effect (DCE). Using a superconducting circuit, we have observed the DCE for the first time. The circuit consists of a coplanar transmission line with an electrical length that can be changed at a few percent of the speed of light. The length is changed by modulating the inductance of a superconducting quantum interference device (SQUID) at high frequencies (~11 GHz). In addition to observing the creation of real photons, we observe two-mode squeezing of the emitted radiation, which is a signature of the quantum character of the generation process.Comment: 12 pages, 3 figure