Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance

Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic doped germanium samples at a rather high concentration corresponding to the insulator metal phase transition.Comment: Pages 13, figures 9, references 1

Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

Electronic structure and light-induced conductivity in a transparent refractory oxide

Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping.Comment: 4 pages including 4 figure

Anomalous Hopping Exponents of Ultrathin Films of Metals

The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hopping conduction.Comment: 6 pages, 5 figure

Anderson Transitions

The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed. The term ``Anderson transition'' is understood in a broad sense, including both metal-insulator transitions and quantum-Hall-type transitions between phases with localized states. The emphasis is put on recent developments, which include: multifractality of critical wave functions, criticality in the power-law random banded matrix model, symmetry classification of disordered electronic systems, mechanisms of criticality in quasi-one-dimensional and two-dimensional systems and survey of corresponding critical theories, network models, and random Dirac Hamiltonians. Analytical approaches are complemented by advanced numerical simulations.Comment: 63 pages, 39 figures, submitted to Rev. Mod. Phy

Universal Crossover between Efros-Shklovskii and Mott Variable-Range-Hopping Regimes

A universal scaling function, describing the crossover between the Mott and the Efros-Shklovskii hopping regimes, is derived, using the percolation picture of transport in strongly localized systems. This function is agrees very well with experimental data. Quantitative comparison with experiment allows for the possible determination of the role played by polarons in the transport.Comment: 7 pages + 1 figure, Revte

Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites

The strikingly different charge transport behaviors in nanocomposites of multiwall carbon nanotubes (MWNTs) and conducting polymer polyethylene dioxythiophene - polystyrene sulfonic acid (PEDOT-PSS) at low temperatures are explained by probing their conformational properties using small angle X-ray scattering (SAXS). The SAXS studies indicate assembly of elongated PEDOT-PSS globules on the walls of nanotubes, coating them partially thereby limiting the interaction between the nanotubes in the polymer matrix. This results in a charge transport governed mainly by small polarons in the conducting polymer despite the presence of metallic MWNTs. At T > 4 K, hopping of the charge carriers following 1D-VRH is evident which also gives rise to a positive magnetoresistance (MR) with an enhanced localization length (~ 5 nm) due to the presence of MWNTs. However, at T < 4 K, the observation of an unconventional positive temperature coefficient of resistivity (TCR) is attributed to small polaron tunnelling. The exceptionally large negative MR observed in this temperature regime is conjectured to be due to the presence of quasi-1D MWNTs that can aid in lowering the tunnelling barrier across the nanotube - polymer boundary resulting in large delocalization.Comment: Accepted J. Phys.: Condens. Matte

Wave function multifractality and dephasing at metal-insulator and quantum Hall transitions

We analyze the critical behavior of the dephasing rate induced by short-range electron-electron interaction near an Anderson transition of metal-insulator or quantum Hall type. The corresponding exponent characterizes the scaling of the transition width with temperature. Assuming no spin degeneracy, the critical behavior can be studied by performing the scaling analysis in the vicinity of the non-interacting fixed point, since the latter is stable with respect to the interaction. We combine an analytical treatment (that includes the identification of operators responsible for dephasing in the formalism of the non-linear sigma-model and the corresponding renormalization-group analysis in $2+\epsilon$ dimensions) with numerical simulations on the Chalker-Coddington network model of the quantum Hall transition. Finally, we discuss the current understanding of the Coulomb interaction case and the available experimental data.Comment: 33 pages, 7 figures, elsart styl