Frequency Modulation of Spin-Transfer Oscillators

Spin-polarized dc electric current flowing into a magnetic layer can induce precession of the magnetization at a frequency that depends on current. We show that addition of an ac current to this dc bias current results in a frequency modulated (FM) spectral output, generating sidebands spaced at the modulation frequency. The sideband amplitudes and shift of the center frequency with drive amplitude are in good agreement with a nonlinear FM model that takes into account the nonlinear frequency-current relation generally induced by spin transfer. Single-domain simulations show that ac current modulates the cone angle of the magnetization precession, in turn modulating the frequency via the demagnetizing field. These results are promising for communications and signal processing applications of spin-transfer oscillators.Comment: 13 pages, 3 Figure

Temperature dependent dynamic and static magnetic response in magnetic tunnel junctions with Permalloy layers

Ferromagnetic resonance and static magnetic properties of CoFe/Al2O3/CoFe/Py and CoFe/Al2O3/CoFeB/Py magnetic tunnel junctions and of 25nm thick single-layer Permalloy(Py) films have been studied as a function of temperature down to 2K. The temperature dependence of the ferromagnetic resonance excited in the Py layers in magnetic tunnel junctions shows knee-like enhancement of the resonance frequency accompanied by an anomaly in the magnetization near 60K. We attribute the anomalous static and dynamic magnetic response at low temperatures to interface stress induced magnetic reorientation transition at the Py interface which could be influenced by dipolar soft-hard layer coupling through the Al2O3 barrier

Current-Driven Microwave Dynamics in Magnetic Point Contacts as a Function of Applied Field Angle

We have measured microwave frequency, current-driven magnetization dynamics in point contacts made to Co90Fe10/Cu/ Ni80Fe20 spin valves as a function of applied field strength and angle relative to the film plane. As the field direction is varied from parallel to nearly perpendicular, the device power output increases by roughly two orders of magnitude while the frequencies of the excitations decrease. For intermediate angles the excited frequency does not monotonically vary with applied current and also exhibits abrupt, current-dependent jumps. For certain ranges of current, and applied field strength and direction, the excitation linewidths decrease to a few megahertz, leading to quality factors over 18,000

Broadband Ferromagnetic Resonance Linewidth Measurement of Magnetic Tunnel Junction Multilayers

The broadband ferromagnetic resonance (FMR) linewidth of the free layer of magnetic tunnel junctions is used as a simple diagnostic of the quality of the magnetic structure. The FMR linewidth increases near the field regions of free layer reversal and pinned layer reversal, and this increase correlates with an increase in magnetic hysteresis in unpatterned films, low frequency noise in patterned devices, and previous observations of magnetic domain ripple by use of Lorentz microscopy. Postannealing changes the free layer FMR linewidth indicating that considerable magnetic disorder, originating in the exchange-biased pinned layer, is transferred to the free layer.Comment: 13 pages, 4 figure

Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation

We model "soft" error rates for writing (WSER) and for reading (RSER) for perpendicular spin-torque memory devices by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: (1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; (2) an approximate analytical expression for the exponential decay of the WSER as a function of the time the current is applied; (3) comparison of the approximate analytical expression for the WSER to numerical solutions of the Fokker-Planck equation; (4) an approximate analytical expression for the linear increase in RSER with current applied for reading; (5) comparison of the approximate analytical formula for the RSER to the numerical solution of the Fokker-Planck equation; and (6) confirmation of the accuracy of the Fokker-Planck solutions by comparison with results of direct simulation using the single-macrospin Landau-Lifshitz-Gilbert (LLG) equations with a random fluctuating field in the short-time regime for which the latter is practical

Direct-Current Induced Dynamics in Co90Fe10/Ni80Fe20 Point Contacts

We have directly measured coherent high-frequency magnetization dynamics in ferromagnet films induced by a spin-polarized DC current. The precession frequency can be tuned over a range of several gigahertz, by varying the applied current. The frequencies of excitation also vary with applied field, resulting in a microwave oscillator that can be tuned from below 5 GHz to above 40 GHz. This novel method of inducing high-frequency dynamics yields oscillations having quality factors from 200 to 800. We compare our results with those from single-domain simulations of current-induced dynamics

The DEPOSIT computer code: calculations of electron-loss cross sections for complex ions colliding with neutral atoms

A description of the DEPOSIT computer code is presented. The code is intended to calculate total and m-fold electron-loss cross sections (m is the number of ionized electrons) and the energy T(b) deposited to the projectile (positive or negative ion) during a collision with a neutral atom at low and intermediate collision energies as a function of the impact parameter b. The deposited energy is calculated as a 3D-integral over the projectile coordinate space in the classical energy-deposition model. Examples of the calculated deposited energies, ionization probabilities and electron-loss cross sections are given as well as the description of the input and output data.Comment: 11 pages, 3 figure