Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 mu m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 degrees C is obtained

Demonstration of a novel III-V-on-Si distributed feedback laser

We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback laser type. All structures defining the laser cavity are defined in the silicon. Alasing threshold of 50mA and a side mode suppression ratio higher than 40 dB is achieved

Heterogeneously integrated III-V/Si multi-wavelength laser based on a ring resonator array multiplexer

A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-coupled output powers of 2mW and a side mode suppression ratio of more than 45dB for all channels is realized

Real-time cancellation of temperature induced resonance shifts in SOI wire waveguide ring resonator label-free biosensor arrays.

A comprehensive investigation of real-time temperature-induced resonance shift cancellation for silicon wire based biosensor arrays is reported for the first time. A reference resonator, protected by either a SU8 or SiO(2) cladding layer, is used to track temperature changes. The temperature dependence of resonators in aqueous solutions, pertinent to biosensing applications, is measured under steady-state conditions and the operating parameters influencing these properties are discussed. Real-time measurements show that the reference resonator resonances reflect the temperature changes without noticeable time delay, enabling effective cancellation of temperature-induced shifts. Binding between complementary IgG protein pairs is monitored over 4 orders of magnitude dynamic range down to a concentration of 20 pM, demonstrating a resolvable mass of 40 attograms. Reactions are measured over time periods as long as 3 hours with high stability, showing a scatter corresponding to a fluid refractive index fluctuation of ± 4 × 10(-6) in the baseline data. Sensor arrays with a SU8 protective cladding are easy to fabricate, while oxide cladding is found to provide superior stability for measurements involving long time scales

III-V/silicon first order distributed feedback lasers integrated on SOI waveguide circuits

Heterogeneously integrated III-V-on-silicon first order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 5 mW output power coupled to a silicon waveguide, 40 dB side mode suppression ratio and continuous wave operation up to 60°C is obtained

Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors

In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) – ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3µm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500µm long. mW-level waveguide coupled output power at 20°C and a side mode suppression ratio of more than 40dB is obtained