Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let

Checkerboard local density of states in striped domains pinned by vortices

Within a Green's function formalism we calculate the electronic structure around static extended magnetic and non-magnetic perturbations in a d-wave superconductor. In partucular, we discuss recent elastic neutron scattering and scanning tunneling experiments on High-T_c cuprates exposed to an applied magnetic field. A physical picture consisting of antiferromagnetic vortex cores operating as pinning centers for surrounding stripes is qualitatively consistent with the neutron data provided the stripes have the usual antiphase modulation. The low energy electronic structure in such a region reveals a checkerboard interference pattern consistent with recent scanning tunneling experiments.Comment: 5 pages, 4 figure

Local density of states around a magnetic impurity in high-Tc superconductors based on the t-J model

The local density of states (LDOS) around a magnetic impurity in high-Tc superconductors is studied using the two-dimensional t-J model with a realistic band structure. The order parameters are determined in a self-consistent way within the Gutzwiller approximation and the Bogoliubov-de Gennes theory. In sharp contrast with the nonmagnetic impurity case, the LDOS near the magnetic impurity shows two resonance peaks reflecting the presence of spin-dependent resonance states. It is also shown that these resonance states are approximately localized around the impurity. The present results have an large implication on the scanning tunneling spectroscopy observation of Bi_{2}Sr_{2}Ca(Cu_{1-x}Ni[Zn]_{x})_{2}O_{8+delta}.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Theory of optical spectra of polar quantum wells: Temperature effects

Theoretical and numerical calculations of the optical absorption spectra of excitons interacting with longitudinal-optical phonons in quasi-2D polar semiconductors are presented. In II-VI semiconductor quantum wells, exciton binding energy can be tuned on- and off-resonance with the longitudinal-optical phonon energy by varying the quantum well width. A comprehensive picture of this tunning effect on the temperature-dependent exciton absorption spectrum is derived, using the exciton Green's function formalism at finite temperature. The effective exciton-phonon interaction is included in the Bethe-Salpeter equation. Numerical results are illustrated for ZnSe-based quantum wells. At low temperatures, both a single exciton peak as well as a continuum resonance state are found in the optical absorption spectra. By contrast, at high enough temperatures, a splitting of the exciton line due to the real phonon absorption processes is predicted. Possible previous experimental observations of this splitting are discussed.Comment: 10 pages, 9 figures, to appear in Phys. Rev. B. Permanent address: [email protected]

Spin-drift transport and its applications

We study the generation of non-equilibrium spin currents in systems with spatially-inhomogeneous magnetic potentials. For sufficiently high current densities, the spin polarization can be transported over distances significantly exceeding the intrinsic spin-diffusion length. This enables applications that are impossible within the conventional spin-diffusion regime. Specifically, we propose dc measurement schemes for the carrier spin relaxation times, $T_1$ and $T_2$, as well as demonstrate the possibility of spin species separation by driving current through a region with an inhomogeneous magnetic potential.Comment: 4 pages, 2 eps figure

Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field

We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.Comment: Non

Localized surface states in HTSC: Alternative mechanism of zero-bias conductance peaks

It is shown that the quasiparticle states localized in the vicinity of surface imperfections of atomic size can be responsible for the zero-bias tunneling conductance peaks in high-Tc superconductors. The contribution from these states can be easily separated from other mechanisms using their qualitatively different response on an external magnetic field.Comment: REVTeX, 4 pages, 2 figs; to be published in PR

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of a more general case of an array of magnetic {\it p-n} junctions is developed and illustrated on several important cases. Two main physical phenomena are discussed: electrical spin injection and spin control of current amplification (magnetoamplification). It is shown that a source spin can be injected from the emitter to the collector. If the base of an MBT has an equilibrium magnetization, the spin can be injected from the base to the collector by intrinsic spin injection. The resulting spin accumulation in the collector is proportional to $\exp(qV_{be}/k_BT)$, where $q$ is the proton charge, $V_{be}$ is the bias in the emitter-base junction, and $k_B T$ is the thermal energy. To control the electrical current through MBTs both the equilibrium and the nonequilibrium spin can be employed. The equilibrium spin controls the magnitude of the equilibrium electron and hole densities, thereby controlling the currents. Increasing the equilibrium spin polarization of the base (emitter) increases (decreases) the current amplification. If there is a nonequilibrium spin in the emitter, and the base or the emitter has an equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification effect, where the current amplifications for the parallel and antiparallel orientations of the the equilibrium and nonequilibrium spins differ significantly. The theory is elucidated using qualitative analyses and is illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure

Evidence of Doping-Dependent Pairing Symmetry in Cuprate Superconductors

Scanning tunneling spectroscopy (STS) studies reveal long-range spatial homogeneity and predominantly $d_{x^2-y^2}$-pairing spectral characteristics in under- and optimally doped $\rm YBa_2Cu_3O_{7-\delta}$ superconductors, whereas STS on $\rm YBa_2(Cu_{0.9934}Zn_{0.0026}Mg_{0.004})_3O_{6.9}$ exhibits {\it microscopic} spatial modulations and strong scattering near the Zn or Mg impurity sites, together with global suppression of the pairing potential. In contrast, in overdoped $\rm (Y_{0.7}Ca_{0.3})Ba_2Cu_3O_{7-\delta}$, $(d_{x^2-y^2}+s)$-pairing symmetry is found, suggesting significant changes in the superconducting ground-state at a critical doping value.Comment: 4 pages, 4 figures. Published in Physical Review Letters. Corresponding author: Nai-Chang Yeh (e-mail address: [email protected]