Simulation of the forward voltage impact on the gain of a narrow-base transistor

Equations have been derived that describe the effect of the forward emitter–base voltage of a bipolar narrow-base transistor on the current gain. The results make it possible to use the model for calculating the processes of charge transfer

Investigation the Structures ZnO:Al/SiO_x/PorSi/p-Si/Al

Was investigated the luminescent properties of the system ZnO:Al/SiO2/PorSi/Si, which was formed by the method of spray pyrolysis. The shift of the photoluminescence intensity at wavelengths of 350 - 450 nm happen due to the introduction of ZnO in porous silicon, the intensity increases with increasing concentration of aluminum from 1.5 at.% to 4.5 at.%. Keywords: nanotechnology, porous silicon, ZnO, doping.</span

Investigation of methods used in calculations of solar cell parameters

Analytical expressions have been obtained for extracting the electrical parameters and characteristics of solar cells, including series and shunt resistances, and the saturation current. The method of Lagrange multipliers was used for computing the shape factor of the current–voltage characteristic (CVC) of solar cell. The calculation results demonstrated a satisfactory agreement with experimental data

Дослідження структур ZnO:Al/SiOx/PorSi/р-Si/Al

EN: Was investigated the luminescent properties of the system ZnO:Al/SiO2/PorSi/Si, which was formed by the method of spray pyrolysis. The shift of the photoluminescence intensity at wavelengths of 350 - 450 nm happen due to the introduction of ZnO in porous silicon, the intensity increases with increasing concentration of aluminum from 1.5 at.% to 4.5 at.%. UK: Досліджено люмінесцентні властивості системи ZnO:Al/SiO2/PorSi/Si, яка була сформована методом розпилення піролізу. Зсув інтенсивності фотолюмінесценції на довжинах хвиль (350-450) нм відбувся через введення ZnO в поруватий кремній, причому, інтенсивність зростала зі збільшенням концентрації алюмінію від 1,5 ат.% до 4,5 ат.%